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ON Semiconductor
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| Part No. |
NTMD2P01R2 NTMD2P01R2-D
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| OCR Text |
...10 vdc, i d = 2.4 adc, v gs =45vdc t r 35 65 turnoff delay time v gs = 4.5 vdc, r g = 6.0 w ) t d(off) 33 60 fall time r g 6.0 w ) t f 29 55 turnon delay time t d(on) 15 ns rise time (v dd = 10 vdc, i d = 1.2 adc, v gs =... |
| Description |
Power MOSFET -2.3 Amps, -16 Volts Dual SO-8 Package
Power MOSFET -2.3 Amps, -16 Volts Dual SO Package(-2.3A16V，双通道SO-8封装的功率MOSFET) 2.3 A, 16 V, 0.1 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET
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| File Size |
76.43K /
8 Page |
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it Online |
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XP Power, Ltd.
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| Part No. |
NTMS4N01R2
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| OCR Text |
...12 vdc, i d = 4.2 adc, v gs =45vdc t r 35 65 turnoff delay time v gs = 4.5 vdc, r g = 2.3 w ) t d(off) 45 75 fall time r g 2.3 w ) t f 50 90 total gate charge (v ds = 12 vdc, q tot 11 16 nc gatesource charge (v ds = 12 vd... |
| Description |
TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 5.9A I(D) | SO 晶体管| MOSFET的| N沟道| 20V的五（巴西）直| 5.9AI（四）|
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| File Size |
87.05K /
8 Page |
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it Online |
Download Datasheet |
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乐山无线电股份有限公
LRC[Leshan Radio Company]
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| Part No. |
MSB709-RT1
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| OCR Text |
...ctor-Base Cutoff Current (VCB =-45vdc, IE=0) Collector-Emitter Cutoff Current (VCE=-10Vdc, IB=0) DC Current Gain (1) (VCE=-10Vdc, IC = -2.0mAdc) Collector-Emitter Saturation Voltage (IC = -100mAdc, IB=-10mAdc) 1. Pulse Test: Pulse Width < 3... |
| Description |
PNP General Purpose Amplifier Transistor Surface Mount
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| File Size |
37.68K /
1 Page |
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it Online |
Download Datasheet |
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Price and Availability
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