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K2412 MN74HC00 R3020 EPA3284G E13001 00ETT LT2A05G 14S471K
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  45.5 Datasheet PDF File

For 45.5 Found Datasheets File :: 267952    Search Time::3.437ms    
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    Fujitsu Microelectronics
Part No. MBM29LV001BC-55 MBM29LV001BC-55PD MBM29LV001BC-55PFTN MBM29LV001BC-55PFTR MBM29LV001TC-70PD MBM29LV001TC-70PFTR MBM29LV001TC-55 MBM29LV001TC-55PFTN MBM29LV001TC-55PFTR MBM29LV001TC-70PFTN MBM29LV001TC-55PD MBM29LV001BC-70 MBM29LV001BC-70PD MBM29LV001BC-70PFTN MBM29LV001BC-70PFTR
OCR Text ...c -55/-70 /mbm29lv001bc -55/-70 4 n flexible sector-erase architecture ? one 8k byte, two 4k bytes, and seven 16k bytes. ? individual-sector, multiple-sector, or bulk-erase capability. ? individual or multiple-sector protection is user defi...
Description FLASH MEMORY 1M (128K x 8) BIT

File Size 269.33K  /  49 Page

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    BUK9514-55

PHILIPS[Philips Semiconductors]
NXP Semiconductors
Part No. BUK9514-55
OCR Text ...5 2900 500 240 35 95 130 60 3.5 4.5 7.5 MAX. 3800 600 330 50 145 180 80 UNIT S pF pF pF ns ns ns ns nH nH nH VDD = 30 V; ID = 25 A; VGS =...55 MAX. 200 UNIT mJ 120 110 100 90 80 70 60 50 40 30 20 10 0 PD% Normalised Power Der...
Description Aluminum Snap-In Capacitor; Capacitance: 820uF; Voltage: 160V; Case Size: 25x35 mm; Packaging: Bulk
TrenchMOS transistor Logic level FET

File Size 48.66K  /  8 Page

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    BUK9508-55

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BUK9508-55
OCR Text ...5200 840 350 45 120 225 100 3.5 4.5 7.5 MAX. 6900 1000 480 60 170 300 135 UNIT S pF pF pF ns ns ns ns nH nH nH VDD = 30 V; ID = 25 A; VGS...55 MAX. 500 UNIT mJ 120 110 100 90 80 70 60 50 40 30 20 10 0 PD% Normalised Power Der...
Description TrenchMOS transistor Logic level FET

File Size 64.04K  /  8 Page

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    BUK7880-55

PHILIPS[Philips Semiconductors]
NXP Semiconductors
Part No. BUK7880-55
OCR Text ... PINNING - SOT223 PIN 1 2 3 4 gate drain source drain (tab) DESCRIPTION PIN CONFIGURATION 4 SYMBOL d g s 1 2 3 LI...55 MAX. 55 55 16 7.5 3.5 2.2 40 8.3 1.8 150 UNIT V V V A A A A W W C ESD LIMITING VALUE SYMBOL V...
Description TrenchMOS transistor Standard level FET

File Size 65.90K  /  9 Page

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    Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
Part No. HY57V643220DLT-55 HY57V643220DTP-45 HY57V643220DT-45 HY57V643220DTP-7 HY57V643220DT-5 HY57V643220DTP-5 HY57V643220DT-6 HY57V643220DT-7 HY57V643220DTP-6 HY57V643220DSTP-45 HY57V643220DLTP-45 HY57V643220DLTP-55 HY57V643220DSTP-55 HY57V643220DLT-45
OCR Text ...l command (burst length of 1,2,4,8 or full page), an d the burst count sequence(se- quential or interleave). a burst of read or write cycle...55 183mhz hy57v643220d(l/s)t(p)-6 166mhz hy57v643220d(l/s)t(p)-7 143mhz ? voltage : vdd, vddq 3.3v s...
Description 4Banks x 512K x 32bits Synchronous DRAM 2M X 32 SYNCHRONOUS DRAM, 4.5 ns, PDSO86

File Size 217.69K  /  13 Page

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    BUK7675-55

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BUK7675-55
OCR Text ...0.04 60 - BUK7675-55 MAX. 4.0 4.4 10 500 1 20 75 157 UNIT V V V V A A A A V m m Gate source breakdown voltage IG = 1 mA; Drain-source on-state VGS = 10 V; ID = 10 A resistance DYNAMIC CHARACTERISTICS Tmb = 25C unless otherwi...
Description TrenchMOS transistor Standard level FET

File Size 51.46K  /  8 Page

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    BUK7635-55

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BUK7635-55
OCR Text ...0.04 28 - BUK7635-55 MAX. 4.0 4.4 10 500 1 20 35 74 UNIT V V V V A A A A V m m Gate source breakdown voltage IG = 1 mA; Drain-source on-state VGS = 10 V; ID = 17 A resistance DYNAMIC CHARACTERISTICS Tmb = 25C unless otherwis...
Description TrenchMOS transistor Standard level FET

File Size 67.84K  /  8 Page

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    BUK7628-55

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BUK7628-55
OCR Text ...0.04 22 - BUK7628-55 MAX. 4.0 4.4 10 500 1 20 28 59 UNIT V V V V A A A A V m m Gate source breakdown voltage IG = 1 mA; Drain-source on-state VGS = 10 V; ID = 20 A resistance DYNAMIC CHARACTERISTICS Tmb = 25C unless otherwis...
Description TrenchMOS transistor Standard level FET

File Size 67.96K  /  8 Page

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    BUK7620-55

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BUK7620-55
OCR Text ...0.04 15 - BUK7620-55 MAX. 4.0 4.4 10 500 1 20 20 42 UNIT V V V V A A A A V m m Gate source breakdown voltage IG = 1 mA; Drain-source on-state VGS = 10 V; ID = 25 A resistance DYNAMIC CHARACTERISTICS Tmb = 25C unless otherwis...
Description TrenchMOS transistor Standard level FET
TrenchMOS(TM)transistor Standard level FET(TrenchMOS(TM)晶体管标准电平FET)

File Size 67.19K  /  8 Page

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    BUK7618-55 NXPSEMICONDUCTORS-BUK7618-55118

NXP SEMICONDUCTORS
PHILIPS[Philips Semiconductors]
Part No. BUK7618-55 NXPSEMICONDUCTORS-BUK7618-55118
OCR Text ...0.02 15 - BUK7618-55 MAX. 4.0 4.4 10 500 1 20 18 38 UNIT V V V V V A A A A V m m DYNAMIC CHARACTERISTICS Tmb = 25C unless otherwise specified SYMBOL gfs Ciss Coss Crss td on tr td off tf Ld Ls PARAMETER Forward transconductance...
Description TrenchMOS transistor Standard level FET

File Size 67.43K  /  8 Page

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