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Infineon Technologies A... INFINEON[Infineon Technologies AG]
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Part No. |
IGP06N60T
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OCR Text |
...g
V s W C
VGE = 15V, VCC 400v, Tj 150C
1 2)
J-STD-020 and JESD-022 Allowed number of short circuits: <1000; time between short...12a 9A 6A 3A 0A 100Hz T C =110C
10A
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
1A
50... |
Description |
Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology
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File Size |
327.84K /
12 Page |
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IRF[International Rectifier]
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Part No. |
IRGB4045DPBF
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OCR Text |
...hz ns J ns J nC IC = 6.0A VCC = 400v VGE = 15V
Conditions
Ref.Fig 24 CT1
IC = 6.0A, VCC = 400v, VGE = 15V RG = 47, L=1mH, LS= 150nH...12a
VCE (V)
6
ICE = 3.0A
6
ICE = 3.0A ICE = 6.0A ICE = 12a
4
2
2
0 5 10 V... |
Description |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
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File Size |
778.63K /
10 Page |
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it Online |
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IRF[International Rectifier]
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Part No. |
IRGB4056DPBF
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OCR Text |
...s J nC IC = 12a VGE = 15V VCC = 400v
Conditions
Ref.Fig 24 CT1
IC = 12a, VCC = 400v, VGE = 15V RG = 22, L = 200H, LS = 150nH, TJ = 25C
Energy losses include tail & diode reverse recovery
CT4
IC = 12a, VCC = 400v, VGE = 15V R... |
Description |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
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File Size |
759.70K /
10 Page |
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SGS Thomson Microelectronics
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Part No. |
STB12NM50-1 STP12NM50FP
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OCR Text |
...pacitance v gs =0v,v ds = 0v to 400v 90 pf r g gate input resistance f=1 mhz gate dc bias=0 test signal level=20mv open drain 1.6 w
3/10 s...12a, v gs = 10v 28 nc q gs gate-source charge 8 nc q gd gate-drain charge 15 nc symbol parameter tes... |
Description |
N-CHANNEL 500V 0.3OHM 12a TO-220/TO-220FP/I2PAK MDMESH POWER MOSFET
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File Size |
114.96K /
10 Page |
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