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Intersil
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Part No. |
IS-1825ASRH
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OCR Text |
... are guaranteed and tested for 300krad(si) total dose performance. detailed electrical specifications for these devices are contained in smd 5962-02511. a ?hot-link? is provided on our website for downloading the smd. pinout is1-1825asrh... |
Description |
Dual Output PWM, High Speed, Single Event Rad-Hard and Total Dose Hardened
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File Size |
477.61K /
2 Page |
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INTERSIL[Intersil Corporation]
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Part No. |
FRE260R FRE260D FRE260H
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OCR Text |
...(Si) Defined End Point Specs at 300krad(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(Si) Survives 3E9 RAD(Si)/sec at 80% BVDSS Typically Survives 2E12 Typically If Current Limited to IDM 18.0nA Per-RAD(Si)/sec Typically ... |
Description |
31A/ 200V/ 0.080 Ohm/ Rad Hard/ N-Channel Power MOSFETs 31A, 200V, 0.080 Ohm, Rad Hard, N-Channel Power MOSFETs
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File Size |
48.34K /
6 Page |
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INTERSIL[Intersil Corporation]
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Part No. |
FRE264R FRE264D FRE264H
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OCR Text |
...(Si) Defined End Point Specs at 300krad(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(Si) Survives 3E9RAD(Si)/sec at 80% BVDSS Typically Survives 2E12 Typically If Current Limited to IDM 22.0nA Per-RAD(Si)/sec Typically P... |
Description |
23A/ 250V/ 0.130 Ohm/ Rad Hard/ N-Channel Power MOSFETs 23A, 250V, 0.130 Ohm, Rad Hard, N-Channel Power MOSFETs
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File Size |
47.39K /
6 Page |
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it Online |
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INTERSIL[Intersil Corporation]
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Part No. |
FRE460R FRE460D FRE460H
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OCR Text |
...(Si) Defined End Point Specs at 300krad(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(Si) Survives 3E9RAD(Si)/sec at 80% BVDSS Typically Survives 2E12 Typically If Current Limited to IDM 45.0nA Per-RAD(Si)/sec Typically P... |
Description |
12A/ 500V/ 0.410 Ohm/ Rad Hard/ N-Channel Power MOSFETs 12A, 500V, 0.410 Ohm, Rad Hard, N-Channel Power MOSFETs
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File Size |
47.23K /
6 Page |
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it Online |
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Intersil, Corp. INTERSIL[Intersil Corporation]
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Part No. |
FRE9260R FRE9260D FRE9260H
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OCR Text |
...(SI) Defined End Point Specs at 300krad(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(Si) Survives 3E9RAD(Si)/sec at 80% BVDSS Typically Survives 2E12 Typically If Current Limited to IDM 18.0nA Per-RAD(Si)/sec Typically P... |
Description |
19A, -200V, 0.210 Ohm, Rad Hard, P-Channel Power MOSFETs 0.21 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-258AA 19A/ -200V/ 0.210 Ohm/ Rad Hard/ P-Channel Power MOSFETs
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File Size |
47.04K /
6 Page |
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it Online |
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INTERSIL[Intersil Corporation]
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Part No. |
FRF150R FRF150D FRF150H
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OCR Text |
...(Si) Defined End Point Specs at 300krad(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(Si) Survives 3E9RAD(Si)/sec at 80% BVDSS Typically Survives 2E12 Typically If Current Limited to IDM 7.0nA Per-RAD(Si)/sec Typically Pr... |
Description |
25A/ 100V/ 0.07 Ohm/ Rad Hard/ N-Channel Power MOSFETs 25A, 100V, 0.07 Ohm, Rad Hard, N-Channel Power MOSFETs
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File Size |
48.42K /
6 Page |
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it Online |
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INTERSIL[Intersil Corporation]
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Part No. |
FRF250R FRF250D FRF250H
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OCR Text |
...(Si) Defined End Point Specs at 300krad(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(Si) Survives 3E9RAD(Si)/sec at 80% BVDSS Typically Survives 2E12 Typically If Current Limited to IDM 12.0nA Per-RAD(Si)/sec Typically P... |
Description |
23A, 200V, 0.115 Ohm, Rad Hard, N-Channel Power MOSFETs
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File Size |
48.57K /
6 Page |
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it Online |
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INTERSIL[Intersil Corporation]
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Part No. |
FRF254R FRF254D FRF254H
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OCR Text |
...(Si) Defined End Point Specs at 300krad(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(Si) Survives 3E9RAD(Si)/sec at 80% BVDSS Typically Survives 2E12 Typically If Current Limited to IDM 15.0nA Per-RAD(Si)/sec Typically P... |
Description |
17A/ 250V/ 0.185 Ohm/ Rad Hard/ N-Channel Power MOSFETs 17A, 250V, 0.185 Ohm, Rad Hard, N-Channel Power MOSFETs
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File Size |
48.31K /
6 Page |
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it Online |
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Intersil, Corp. INTERSIL[Intersil Corporation]
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Part No. |
FRK150R FRK150D FRK150H
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OCR Text |
...(Si) Defined End Point Specs at 300krad(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(Si) Survives 3E9RAD(Si)/sec at 80% BVDSS Typically Survives 2E12 Typically If Current Limited to IDM 7.0nA Per-RAD(Si)/sec Typically Pr... |
Description |
40A, 100V, 0.055 Ohm, Rad Hard, N-Channel Power MOSFETs 0.055 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE 40A/ 100V/ 0.055 Ohm/ Rad Hard/ N-Channel Power MOSFETs
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File Size |
47.77K /
6 Page |
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it Online |
Download Datasheet |
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Price and Availability
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