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http:// SIEMENS[Siemens Semiconductor Group]
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| Part No. |
CGY195
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| OCR Text |
...oltage range: 2.7 to 6 V Pout = 26dbm at Vd=3.3V Overall power added efficiency 44 %
RF_out / VD2 4 GND 5
3 2 VD1
ESD: Electrostatic discharge sensitive device, observe handling precautions!
1 RF-in
GND
VPW05980
Type
M... |
| Description |
GaAs MMIC From old datasheet system
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| File Size |
32.03K /
3 Page |
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it Online |
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United Monolithic Semic... UMS[United Monolithic Semiconductors]
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| Part No. |
CHA5290-99F_00 CHA5290 CHA5290-99F/00
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| OCR Text |
...s
Performances : 17.7 -24GHz 26dbm output power @ 1dB comp. gain 26 dB 1dB gain DC power consumption, 400mA @ 6V Chip size : 3.43 x 1.57 x 0.05 mm
S11 (dB) 22 24
S21 (dB) 26 28 30
S22 (dB) 32 34
Frequency (GHz)
Typical... |
| Description |
17.7-24GHz Medium Power Amplifier
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| File Size |
116.58K /
6 Page |
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it Online |
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EUDYNA[Eudyna Devices Inc]
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| Part No. |
EGN21A180IV
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| OCR Text |
...2 2.22 2.24 Frequency [GHz] Pin=26dbm Pin=32dBm Pin=38dBm Pin=28dBm Pin=34dBm Pin=40dBm Output Power and Drain Efficiency vs. Input Power VDS=50V, IDS=1.0A, f=2.14GHz 54 90 52 50 48 46 44 42 40 38 36 Output Power 80 Drain Efficiency [%] 70 ... |
| Description |
High Voltage - High Power GaN-HEMT
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| File Size |
230.17K /
4 Page |
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it Online |
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EUDYNA[Eudyna Devices Inc]
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| Part No. |
ESN26A090IV
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| OCR Text |
...y [GHz] Pin=22dBm Pin=34dBm Pin=26dbm Pin=38dBm
r P
160 140 120 100 80 60 40 20 0 Total Power Dissipasion [W]
im l e
Pin=30dBm
a in
21 23
ry
31 33 35 37 39 Input Power [dBm]
50 40 30 20 10 0
25 27 29
Power Derating ... |
| Description |
High Voltage - High Power GaN-HEMT
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| File Size |
102.49K /
4 Page |
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it Online |
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Price and Availability
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