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  2660 Datasheet PDF File

For 2660 Found Datasheets File :: 296    Search Time::1.672ms    
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    LLG2C821MELZ35 LLG2C821MELA25 LLG2C681MELZ30 LLG2C561MELZ25 LLG2C122MELB25 LLG2Z102MELB25 LLG2E681MELB25 LLG2W221MELB25

Nichicon corporation
Part No. LLG2C821MELZ35 LLG2C821MELA25 LLG2C681MELZ30 LLG2C561MELZ25 LLG2C122MELB25 LLG2Z102MELB25 LLG2E681MELB25 LLG2W221MELB25 LLG2C152MELB30 LLG2Z122MELB30 LLG2D102MELB30 LLG2D122MELB30 LLG2E821MELB30 LLG2Z222MELB45 LLG2Z222MELC35 LLG2Z182MELA50 LLG2D152MELA50 LLG2E102MELA50 LLG2G471MELA50 LLG2W391MELA50 LLG2C152MELA40 LLG2Z122MELA40 LLG2D122MELA40 LLG2E821MELA40 LLG2G391MELA40 LLG2W271MELA40 LLG2C182MELC30 LLG2Z152MELC30 LLG2Z182MELC30 LLG2Z102MELA35 LLG2Z102MELZ40 LLG2Z122MELC25 LLG2Z122MELZ45 LLG2Z152MELA45 LLG2Z152MELB35 LLG2Z182MELB40 LLG2W821MELC50 LLG2C152MELC25 LLG2D122MELC25 LLG2E821MELC25 LLG2G391MELC25 LLG2D152MELC30 LLG2E102MELC30 LLG2W121MELZ25 LLG2D332MELC50
OCR Text ...0 1950 2100 2100 2100 2320 2320 2660 2660 2820 3000 Leakage Current Code (mA) 0.69 LLG2W121MELZ25 0.77 0.77 0.85 0.85 0.94 0.94 0.94 1.04 1.04 1.04 1.15 1.15 1.15 1.25 1.25 1.25 1.37 1.37 1.50 1.50 1.65 1.82 LLG2W151MELZ30 LLG2W151MELA25...
Description ALUMINUM ELECTROLYTIC CAPACITORS

File Size 101.59K  /  3 Page

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    FREESCALE[Freescale Semiconductor, Inc]
Part No. MRF6S27015NR1_07 MRF6S27015GNR1 MRF6S27015NR1 MRF6S27015NR107
OCR Text ...0 2540 2560 2580 2600 2620 2640 2660 2680 2700 f, FREQUENCY (MHz) Figure 3. Single - Carrier W - CDMA Broadband Performance @ Pout = 3 Watts Avg. 15 14 13 Gps, POWER GAIN (dB) 12 11 10 9 8 IRL ACPR ALT1 D VDD = 28 Vdc, Pout = 6 W (Avg.)...
Description RF Power Field Effect Transistors

File Size 538.89K  /  17 Page

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    POWER-ONE[Power-One]
Part No. LS2660-7R LS1001-7R LS1301-7R LS1501-7R LS1601-7R LS2320-7R LS2540-7R
OCR Text ...601-7R LS 2320-7R LS 2540-7R LS 2660-7R LS 2320-7R LS 2540-7R LS 2660-7R -9, E, D, V, P, T, B1 -9, E, D, P, T, B1 -9, E, D, P, T, B1 -9, E, D, P, T, B1 -9, E, D, P, T, B1 -9, E, D, P, T, B1 -9, E, D, P, T, B1 -9, E, D, P, T, B1 -9, E, D, P,...
Description    100 Watt AC-DC Converters

File Size 65.98K  /  4 Page

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    AP9575H AP9575J

Advanced Power Electronics, Corp.
Advanced Power Electronics Corp.
Part No. AP9575H AP9575J
OCR Text ...Transfer Capacitance 2 1660 2660 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 2 Test Conditions IS=-9A, VGS=0V IS=-9A, VGS=0V, dI/dt=-100A/s Min. - Typ. 60 159 Max. Units -1.2 V ns nC Reverse ...
Description P-CHANNEL ENHANCEMENT MODE P沟道增强

File Size 69.77K  /  4 Page

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    APT75DQ100B APT75DQ100BG APT75DQ100S APT75DQ100SG

Advanced Power Technology
Part No. APT75DQ100B APT75DQ100BG APT75DQ100S APT75DQ100SG
OCR Text ... UNIT ns nC 33 250 465 4 310 2660 13 160 1675 45 - - Amps ns nC Amps ns nC Amps THERMAL AND MECHANICAL CHARACTERISTICS Symbol RJC WT Characteristic / Test Conditions Junction-to-Case Thermal Resistance Package Weight MIN TYP MA...
Description ULTRAFAST SOFT RECOVERY RECTIFIER DIODE

File Size 128.20K  /  4 Page

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    AA1101W AY1101W PG1101W BR1101W BG1101W PY1101W

List of Unclassifed Manufacturers
ETC[ETC]
STANLEY ELECTRIC CO.,LTD.
Part No. AA1101W AY1101W PG1101W BR1101W BG1101W PY1101W
OCR Text ...lectric Sales of America, Inc. 2660 Barranca Parkway, Irvine, CA 92606 * Tel: 800-LED-LCD1 (533-5231) * Fax: 949-222-0555 Website: www.stanley-electric.com
Description 1101W Series Standard Type Flat Lens SMT LED

File Size 158.32K  /  2 Page

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    Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
Part No. APT10M19BVFR
OCR Text ...0 200 40 92 16 40 50 20 6120 2660 1200 300 60 140 32 80 75 40 ns nC Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol ...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 100V 75A 0.019 Ohm

File Size 73.97K  /  4 Page

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    Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
Part No. APT10M19BVR
OCR Text ...0 200 40 92 16 40 50 20 6120 2660 1200 300 60 180 32 40 75 40 ns nC pF Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Sym...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 100V 75A 0.019 Ohm

File Size 67.13K  /  4 Page

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    ADPOW[Advanced Power Technology]
Part No. APT10M19SVFR APT10M19BVFR APT10M19BVFR_04 APT10M19BVFR04
OCR Text ...0 200 40 92 16 40 50 20 6120 2660 1200 300 60 140 32 80 75 40 ns nC pF Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symb...
Description POWER MOS V FREDFET

File Size 115.86K  /  4 Page

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    ADPOW[Advanced Power Technology]
Part No. APT10M19SVR
OCR Text ...0 200 40 92 16 40 50 20 6120 2660 1200 300 60 180 32 40 75 40 ns nC pF Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Sym...
Description POWER MOS V 100V 75A 0.019 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 69.86K  /  4 Page

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