2110-2170 pdf Datasheet P7 Full Text Search --- IC-ON-LINE


	Part Number	Hot Search : C1678 TR0017 Q5008RH4 6K5203BJ A8370 15KPA220 VRE402L FMM50
	Product Description
	Full Text Search

2110-2170 Datasheet PDF File

For 2110-2170 Found Datasheets File :: 1365 Search Time::1.375ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | <7> | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |

				http:// INFINEON[Infineon Technologies AG]
Part No.	PTF211802A PTF211802E PTF211802
OCR Text	2110-2170 MHz Description The PTF211802 is a 180 W, internally matched, laterally double-diffused, GOLDMOS push-pull FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and ...
Description	LDMOS RF Power Field Effect Transistor 180 W 2110-2170 MHz LDMOS RF POWER FIELD EFFECT TRANSISTOR 180 W, 2110-2170 MHZ LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz
File Size	165.14K / 8 Page	View it Online	Download Datasheet

				EPCOS
Part No.	B7642
OCR Text	...20.0 ... 1980.0 Attenuation 0.3 2110.0 2400.0 3840.0 ... ... ... ... 1790.0 2170.0 2500.0 3960.0 MHz MHz MHz MHz fC max MHz MHz ch MHz MHz MHz 30 40 25 20 32 45 31 23 -- -- -- -- dB dB dB dB -- -- -- 0.25 2.0 1.7 0.5 2.3 2.0 dB -- 0.45 1....
Description	SAW Components
File Size	152.03K / 11 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	AFT21H350W03SR6
OCR Text	...covering the frequency range of 2110 to 2170 mhz. ? typical doherty single--carrier w--cdma performance: v dd =28volts, i dqa = 750 ma, v gsb =0.7vdc,p out = 63 watts avg., input signal par = 9.9 db @ 0.01% probability on ccdf. frequency g ...
Description	RF Power LDMOS Transistors
File Size	536.83K / 18 Page	View it Online	Download Datasheet

				EPCOS
Part No.	B7643
OCR Text	...0 Attenuation 1.0 1570.0 1805.0 2110.0 2402.0 3840.0 5760.0 ... ... ... ... ... ... ... 1570.0 1580.0 1880.0 2170.0 2480.0 3960.0 5940.0 MHz MHz MHz MHz MHz MHz MHz MHz MHz -- -- -- 0.2 1.8 1.6 -- 2.1 1.9 dB 10 20 1 38 5 13 ...
Description	SAW Components
File Size	138.89K / 11 Page	View it Online	Download Datasheet

				Freescale Semiconductor, Inc MOTOROLA
Part No.	MRF6S20010N MRF6S20010NR1 MRF6S20010GNR1
OCR Text	...GNR1) Test Circuit Schematic -- 2110 - 2170 MHz Table 6. MRF6S20010NR1(GNR1) Test Circuit Component Designations and Values -- 2110 - 2170 MHz Part C1 C2, C6 C3, C7, C8 C4, C5, C9, C10 C11 R1 R2 R3 Description 100 nF Chip Capacitor (120...
Description	RF Power Field Effect Transistors The MRF6S20010NR1 and MRF6S20010GNR1 are designed for Class A or Class AB general purpose applications
File Size	572.02K / 24 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	PTF210101M
OCR Text	2110 - 2170 MHz Description The PTF210101M is an unmatched 10-watt GOLDMOS (R) FET intended for class AB base station applications in the 2110 to 2170 MHz band. This LDMOS device offers excellent gain, efficiency and linearity performance...
Description	High Power RF LDMOS Field Effect Transistor 10 W, 2110 ?2170 MHz
File Size	267.64K / 8 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	PTF211301 PTF211301A
OCR Text	2110-2170 MHz Description The PTF211301 is a 130-W, internally matched GOLDMOS FET intended for WCDMA applications. It is characaterized for single- and two-carrier WCDMA operation from 2110 to 2170 MHz. Full gold metallization ensures ex...
Description	LDMOS RF POWER FIELD EFFECT TRANSISTOR 130 W, 2110-2170 MHZ LDMOS RF Power Field Effect Transistor 130 W/ 2110-2170 MHz
File Size	444.92K / 9 Page	View it Online	Download Datasheet

				Tyco Electronics
Part No.	MAPLST2122-015CF
OCR Text	2110 -- 2170 MHz, 15W, 28V 8/20/03 Preliminary MAPLST2122-015CF Features Designed for W-CDMA base station applications in the 2.1 to 2.2 GHz Frequency Band. Suitable for TDMA, CDMA, and multicarrier power amplifier applications...
Description	RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 15W, 28V
File Size	234.56K / 5 Page	View it Online	Download Datasheet

				Tyco Electronics
Part No.	MAPLST2122-030CF
OCR Text	2110 -- 2170 MHz, 30W, 28V 4/6/2005 Preliminary MAPLST2122-030CF Features Designed for W-CDMA base station applications in the 2.1 to 2.2 GHz Frequency Band. Suitable for TDMA, CDMA, and multicarrier power amplifier application...
Description	RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 30W, 28V
File Size	158.31K / 5 Page	View it Online	Download Datasheet

				Tyco Electronics
Part No.	MAPLST2122-060CF
OCR Text	2110 -- 2170 MHz, 60W, 28V 4/6/2005 Preliminary MAPLST2122-060CF Features Designed for W-CDMA base station applications in the 2.1 to 2.2 GHz Frequency Band. Suitable for TDMA, CDMA, and multicarrier power amplifier application...
Description	RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 60W, 28V
File Size	168.31K / 5 Page	View it Online	Download Datasheet

For 2110-2170 Found Datasheets File :: 1365 Search Time::1.375ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | <7> | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |