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Motorola Mobility Holdings, Inc.
Motorola, Inc
MOTOROLA[Motorola Inc]
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| Part No. |
MRF21125S MRF21125 MRF21125SR3
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| OCR Text |
...ier W-CDMA, IDQ = 1600 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Drain Efficiency (VDD = 28 Vdc, Pout = 20 W Avg, 2-carrier W-CDMA, IDQ = 1600 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2... |
| Description |
RF POWER FIELD EFFECT TRANSISTORS S BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF21125, MRF21125S, MRF21125SR3 2170 MHz, 125 W, 28 V Lateral N-Channel RF Power MOSFETs
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| File Size |
378.36K /
12 Page |
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Motorola
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| Part No. |
MRF5S21100LSR3 MRF5S21100LR3 MRF5S21100L
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| OCR Text |
... 23 W Avg., IDQ = 1050 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Drain Efficiency (VDD = 28 Vdc, Pout = 23 W Avg., IDQ = 1050 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Third ... |
| Description |
2170 MHz, 23 W Avg., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET
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| File Size |
200.55K /
12 Page |
View
it Online |
Download Datasheet |
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MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
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| Part No. |
MRF5S21150S MRF5S21150SR3 MRF5S21150 MRF5S21150R3
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| OCR Text |
... 33 W Avg., IDQ = 1300 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Drain Efficiency (VDD = 28 Vdc, Pout = 33 W Avg., IDQ = 1300 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Third ... |
| Description |
RF POWER FIELD EFFECT TRANSISTORS
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| File Size |
553.35K /
12 Page |
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it Online |
Download Datasheet |
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Motorola
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| Part No. |
MRF5P21240
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| OCR Text |
...W Avg., IDQ = 2 x 1100 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Drain Efficiency (VDD = 28 Vdc, Pout = 52 W Avg., IDQ = 2 x 1100 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Th... |
| Description |
2170 MHz, 52 W Avg., 2 x W–CDMA, 28 V Lateral N–Channel Broadband RF Power MOSFET
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| File Size |
585.82K /
8 Page |
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it Online |
Download Datasheet |
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Sanyo
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| Part No. |
2SB1201 2SD1801 0738
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| OCR Text |
...KT)/8259MO/4137KI/4076KI, TS No.2112-1/5
2SB1201/2SD1801
( ) : 2SB1201
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current C... |
| Description |
PNP Epitaxial Planar Silicon Transistors High-Current Switching Applications
From old datasheet system
PNP/NPN Epitaxial Planar Silicon Transistors
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| File Size |
142.05K /
5 Page |
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it Online |
Download Datasheet |
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Price and Availability
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