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  2.9ns Datasheet PDF File

For 2.9ns Found Datasheets File :: 760    Search Time::7.531ms    
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    HY57V161610D-I HY57V161610DTC-10I HY57V161610DTC-7I HY57V161610DTC-55I HY57V161610DTC-6I HY57V161610DTC-8 HY57V161610DTC

HYNIX[Hynix Semiconductor]
Hynix Semiconductor Inc.
Part No. HY57V161610D-I HY57V161610DTC-10I HY57V161610DTC-7I HY57V161610DTC-55I HY57V161610DTC-6I HY57V161610DTC-8 HY57V161610DTC-5
OCR Text 2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hynix HY57V161610D is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited f...9ns Rev. 0.3/Mar. 02 4 HY57V161610D-I CAPACITANCE (TA=25C, f=1MHz) Parameter CLK Input ca...
Description SDRAM - 16Mb
2 Banks x 512K x 16 Bit Synchronous DRAM

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    HY57V161610D HY57V161610DTC-10 HY57V161610DTC-5 HY57V161610DTC-55 HY57V161610DTC-7 HY57V161610DTC-8 HY57V161610DTC-15 HY

Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
Part No. HY57V161610D HY57V161610DTC-10 HY57V161610DTC-5 HY57V161610DTC-55 HY57V161610DTC-7 HY57V161610DTC-8 HY57V161610DTC-15 HY57V161610DTC-6 HY57V161610DTC-10I HY57V161610DTC-6I HY57V161610DTC-55I HY57V161610DTC-7I
OCR Text 2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hyundai HY57V161610D is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited f...9ns 3. VDD(min) of HY57V161610DTC-5/55 is 3.15V` Rev. 4.0/Aug. 02 4 HY57V161610D CAPACITAN...
Description 2 Banks x 512K x 16 Bit Synchronous DRAM 1M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO50
2 Banks x 512K x 16 Bit Synchronous DRAM 1M X 16 SYNCHRONOUS DRAM, 5.5 ns, PDSO50
SDRAM - 16Mb

File Size 171.73K  /  13 Page

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    AUSTIN[Austin Semiconductor]
Part No. AS4SD4M16DG-8_XT AS4SD4M16 AS4SD4M16DG-10_IT AS4SD4M16DG-10_XT AS4SD4M16DG-8_IT
OCR Text ...ITE Recovery ( tWR/ tDPL) tWR = 2 CLK Fully synchronous; all signals registered on positive edge of system clock Internal pipelined operatio...9ns @ CL = 2 Operating Temperature Ranges -Military (-55C to +125 C) -Industrial Temp (-40C to 85 C)...
Description 4 Meg x 16 SDRAM Synchronous DRAM Memory

File Size 1,136.68K  /  50 Page

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    AMD-766

Advanced Micro Devices
Part No. AMD-766
OCR Text ...june 2001 c added errata #22. 2 23615c ? june 2001 amd-766 ? peripheral bus controller revision guide preliminary information amd-766? p...9ns. non-conformance. the hold time requirement on data from strobe for udma modes 0-4 was increase...
Description AMD-766 Peripheral Bus Controller Data Sheet

File Size 170.65K  /  29 Page

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    V827432K24S

MOSEL[Mosel Vitelic, Corp]
Part No. V827432K24S
OCR Text 2.5 VOLT 32M x 72 HIGH PERFORMANCE UNBUFFERED ECC DDR SDRAM MODULE PRELIMINARY CILETIV LESO M Features 184 Pin Unbuffered 33,554,...9ns 0.9ns 0.5ns 0.5ns 0.9ns 0.75ns 0.9ns 0.75ns 0.5ns 0.45ns 0.5ns 0.45ns B0h B0h 60h 60h 90h 90h 50...
Description 2.5 VOLT 32M x 72 HIGH PERFORMANCE UNBUFFERED ECC DDR SDRAM MODULE

File Size 153.17K  /  14 Page

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    Samsung Electronics
Part No. K8F5615EBM
OCR Text 2 september, 2006 1 256mb m-die mlc nor specification information in this document is provided in relation to samsung products, and is...9ns (@83mhz) tbdh : 1.5ns ==> 3ns (@66mhz, 83mhz), 2ns (@133mhz) toe : 20ns ==> 15ns trdya : 8ns ==>...
Description 256Mb M-die MLC NOR Specification

File Size 1,124.45K  /  59 Page

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    KFG1216D2M KFG1216Q2M KFH1G16Q2M

Samsung semiconductor
Part No. KFG1216D2M KFG1216Q2M KFH1G16Q2M
OCR Text ...ended 63fbga(lf) kfg1216d2m-deb 2.65v(2.4v~2.9v) extended 63fbga(lf) kfg1216u2m-dib 3.3v(2.7v~3.6v) industrial 63fbga(lf) 1gb kfh1g16q2m-deb...9ns-->7ns, tces : 7ns -->9ns, taavds : 5ns-->7ns tds : 30ns-->10ns, tdh : 0ns-->4ns 5. define new ac...
Description FLASH MEMORY

File Size 1,340.62K  /  93 Page

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    Hyundai
Part No. HY57V161610D HY57V
OCR Text 2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION Preliminary THE Hyundai HY57V161610D is a 16,777,216-bits CMOS Synchronous DRA...9ns 3. VDD(min) of HY57V161610DTC-5/55 is 3.15V` Rev. 3.3/Mar.99 4 HY57V161610D CAPACITANC...
Description 16M DRAM
From old datasheet system

File Size 120.08K  /  11 Page

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    hynix
Part No. HY57V161610ET-6
OCR Text 2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for...9ns 3. VDD(min) of HY57V161610ET-5/55 is 3.15V` Rev. 0.2 / Aug. 2003 4 HY57V161610E CAPACI...
Description IC,SDRAM,2X512KX16,CMOS,TSOP,50PIN,PLASTIC

File Size 159.80K  /  13 Page

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