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  2-8 Datasheet PDF File

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    HM514260CJ-8 HM514260CLJ-7 HM514260CLJ-8 HM514260CTT-7 HM514260CTT-8 HM514260CTT-6 HM514260CTT-6R HM514260C HM51S4260CTT

HITACHI[Hitachi Semiconductor]
Part No. HM514260CJ-8 HM514260CLJ-7 HM514260CLJ-8 HM514260CTT-7 HM514260CTT-8 HM514260CTT-6 HM514260CTT-6R HM514260C HM51S4260CTT-8 HM514260CLJ-6 HM514260CLJ-6R HM514260CLTT-6 HM514260CLTT-6R HM514260CLTT-7 HM514260CLTT-8 HM51S4260C HM51S4260CJ-6 HM51S4260CJ-6R HM51S4260CJ-7 HM51S4260CJ-8 HM51S4260CLJ-6 HM51S4260CLJ-6R HM51S4260CLJ-7 HM51S4260CLJ-8 HM51S4260CLTT-6 HM51S4260CLTT-6R HM51S4260CLTT-7 HM51S4260CLTT-8 HM51S4260CTT-6 HM51S4260CTT-6R HM51S4260CTT-7
OCR Text ...cycles: 8 ms 128 ms (L-version) 2 CAS-byte control 2 variations of refresh -- RAS-only refresh -- CAS-before-RAS refresh Battery backup operation (L-version) Self refresh operation (HM51S4260C) * * * * * * HM514260C, HM51S4260C Ser...
Description 80ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
70ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
262,144-WORD X 16-BIT DYNAMIC RANDOM ACCESS MEMORY
60ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory

File Size 260.25K  /  27 Page

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    HYS64D16000GDL-8-B HYS64D16000GDL-6-B HYS64D16000GDL-7-B HYS64D16001GDL-6-B HYS64D16001GDL-7-B HYS64D32020GDL-8-B HYS64D

INFINEON[Infineon Technologies AG]
Part No. HYS64D16000GDL-8-B HYS64D16000GDL-6-B HYS64D16000GDL-7-B HYS64D16001GDL-6-B HYS64D16001GDL-7-B HYS64D32020GDL-8-B HYS64D32020GDL HYS64D32020GDL-5-B HYS64D32020GDL-6-B HYS64D32020GDL-7-B
OCR Text 2 , A u g . 2 00 3 H Y S 64 D 3 2 0 2 0 G D L - [ 5 / 6 / 7 / 8 ] - B H Y S 64 D 1 6 0 0 x G D L - [ 6 / 7 / 8 ] - B 200- Pi n Small Outli ne Dual -In- Line Memor y Modules S O -D I M M DDR SDRAM M e m or y P r o du c t s Never ...
Description DDR SDRAM Modules - 256MB (32Mx64) PC3200 2-bank
DDR SDRAM Modules - 128MB (16Mx64) PC2700 1-bank
DDR SDRAM Modules - 128MB (16Mx64) PC2100 1-bank
DDR SDRAM Modules - 256MB (32Mx64) PC2100 2-bank
200-Pin Small Outline Dual-In-Line Memory Modules

File Size 433.11K  /  31 Page

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    KM4132G271BTQ-8 KM4132G271BTQ_R-8 KM4132G271B KM4132G271BQ_R-10 KM4132G271BQ_R-7 KM4132G271BQ_R-8 KM4132G271BTQ_R-10 KM4

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. KM4132G271BTQ-8 KM4132G271BTQ_R-8 KM4132G271B KM4132G271BQ_R-10 KM4132G271BQ_R-7 KM4132G271BQ_R-8 KM4132G271BTQ_R-10 KM4132G271BTQ_R-7 KM4132G271BTQR-10 KM4132G271BTQR-8 KM4132G271BQR-8 KM4132G271BTQR-7 KM4132G271BQR-10
OCR Text 2 Banks Synchronous Graphic RAM LVTTL Revision 2.4 May 1998 Samsung Electronics reserves the right to change products or specification...8 & full page) -. Burst Type (Sequential & Interleave) All inputs are sampled at the positive going ...
Description 128K x 32bit x 2 Banks Synchronous Graphic RAM LVTTL

File Size 1,032.84K  /  51 Page

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    MCK100-8

SemiWell Semiconductor
Part No. MCK100-8
OCR Text ...tage (1.2V(Typ.)@ ITM) 1 2 3 2. Anode 1. Cathode SOT- 89 General Description Sensitive triggering SCR is suitable fo...8.3ms TA =25C, Pulse Width 1.0 TA =25C, t = 8.3ms 0.5 0.8 10 0.415 2 0.1 1 5.0 - 40 ~ 125 - 40 ~ 15...
Description Sensitive Gate Silicon Controlled Rectifiers

File Size 533.19K  /  5 Page

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    NEC Corp.
NEC[NEC]
Part No. NE8500295-8 NE8500295-6 NE8500295-4 NE85002 NE8500200 NE8500200-RG NE8500200-WB NE8500200-WB-A
OCR Text 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE8500295 power GaAs FET covers 3.5 to 8.5 GHz frequency range with three different Class A, 2.0 W partially matched devices. Each packaged device has an input lumped elem...
Description 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
C BAND, GaAs, N-CHANNEL, RF POWER, MESFET

File Size 47.52K  /  8 Page

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    Ecliptek, Corp.
Pulse Engineering, Inc.
Hokuriku Electric Industry Co., Ltd.
Part No. NSO-10002MD-8-050 NSO-10002MHCP-8-050 NSO-10242MD-8-050 NSO-10002M-8-050 NSO-1002M-8-050 NSO-1002MHCP-8-050 NSO-10242M-8-050 NSO-1002MD-8-050 NSO-25002M-8-050 NSO-15002M-8-050 NSO-15002MHCP-8-050 NSO-10242MHCP-8-050 NSO-25002MD-8-050 NSO-40962M-8-300 NSO-15002MD-8-050 NSO-40962MC-8-050 NSO-402MC-8-100 NSO-4002MC-8-050 NSO-5122M-8-050
OCR Text ...cal 1. max shaft load, radial: 2.5 kgf axial: 4.0 kgf 2. max slewing speed: 5000 rpm 3. starting torque: 10gf  cm max. 4. rotational life: 1 x 10 8 rpm  hrs environmental 1. operating temp: -10 to +70 c 2. storage temp: ...
Description ROTARY OPTICAL POSITION ENCODER

File Size 19.96K  /  1 Page

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    Ruilongyuan Electronics Co.,Ltd
Ruilongyuan Electronics Co....
Ruilongyuan Electronics...
Part No. 3R250SD-8 3R150SD-8 3R350SD-8 3R150TD-8 3R150TD-8F 3R075TD-8F
OCR Text ...-8series 1. rohs & hf compliant 2. rugged ceramic-metal construction 3. available with or without leads 4. available with fail-safe clip 5. dc spark-over voltage:75~600v 6. low capacitance 7. agency recognition :ul 8. operating temperature ...
Description Gas Discharge Tube

File Size 553.05K  /  6 Page

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    SMP75-8

意法半导
STMicroelectronics
Part No. SMP75-8
OCR Text ...< 75 pF Low leakage current : < 2 A DESCRIPTION The SMP75-8 is a very low voltage transient surge arrestor especially designed to protect sensitive telecommunication equipment against lightning strikes and other transients. SMB (JEDE...
Description TRISILTM
TRISIL TM

File Size 62.33K  /  6 Page

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    MAC210-8 MAC210-10 MAC210-4 MAC210-6 MAC210A10 MAC210A6 MAC210A8 MAC210A4

MOTOROLA INC
Motorola, Inc.
Part No. MAC210-8 MAC210-10 MAC210-4 MAC210-6 MAC210A10 MAC210A6 MAC210A8 MAC210A4
OCR Text ...oltage(1) (TJ = -40 to +125C, 1/2 Sine Wave 50 to 60 Hz, Gate Open) Symbol VDRM MAC210-4, MAC210A4 MAC210-6, MAC210A6 MAC210-8, MAC210A8 MAC210-10, MAC210A10 IT(RMS) ITSM 200 400 600 800 10 100 Amps Amps Value Unit Volts On-State Current...
Description TRIACs 10 AMPERES RMS 200 thru 800 VOLTS

File Size 67.01K  /  4 Page

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