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KINGBRIGHT[Kingbright Corporation]
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| Part No. |
KB837-B
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| OCR Text |
...Output Collector dark current
*1current
Symbol VF VFM IR ICEO CTR VCE(sat) fc
Conditions I F=20mA I FM=0.5A VR=4V VCE =20V,I F=0mA I F=5mA,VCE=5V I F=20mA, I C=1mA VCE=5V, IC=2mA RL=100,-3dB VCE=2V, IC=2mA RL=100
Min. ___ ___ ___ ... |
| Description |
GENERAL PURPOSE HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE PHOTOCOUPLER SERIES
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| File Size |
212.85K /
8 Page |
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it Online |
Download Datasheet
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KINGBRIGHT[Kingbright Corporation]
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| Part No. |
KB847-B
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| OCR Text |
...Output Collector dark current
*1current
Symbol VF VFM IR ICEO CTR VCE(sat) fc
Conditions I F=20mA I FM=0.5A VR=4V VCE =20V,I F=0mA I F=5mA,VCE=5V I F=20mA, I C=1mA VCE=5V, IC=2mA RL=100,-3dB VCE=2V, IC=2mA RL=100
Min. ___ ___ ___ ... |
| Description |
GENERAL PURPOSE HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE PHOTOCOUPLER SERIES
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| File Size |
213.25K /
8 Page |
View
it Online |
Download Datasheet |
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INFINEON[Infineon Technologies AG]
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| Part No. |
SPI80N08S2-07R
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| OCR Text |
...esistance
V GS=10V, I D=80A
1current limited by bondwire ; with an RthJC = 0.5K/W the chip is able to carry ID= 133A at 25C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Defined by design. Not s... |
| Description |
Low Voltage MOSFETs - TO262; 80 A; 75V; NL; 7.3 mOhm; integrated Rg
OptiMOS Power-Transistor
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| File Size |
324.92K /
8 Page |
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it Online |
Download Datasheet |
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Infineon
SIEMENS[Siemens Semiconductor Group]
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| Part No. |
SPP46N03 Q67040-S4145-A3 Q67040-S4742-A2 SPB46N03
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| OCR Text |
...nce
VGS = 10 V, ID = 46 A
1current limited by bond wire 2 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70m thick) copper area for drain connection. PCB is vertical without blown air.
Semiconductor Group
2
SP... |
| Description |
N-Channel SIPMOS Power Transistor
SIPMOS-TM POWER TRANSISTOR
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| File Size |
76.94K /
9 Page |
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it Online |
Download Datasheet |
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SIEMENS[Siemens Semiconductor Group]
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| Part No. |
SPP80N03L SPB80N03L
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| OCR Text |
...= 80 A VGS = 10 V, ID = 80 A
1current limited by bond wire 2 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70m thick) copper area for drain connection. PCB is vertical without blown air.
Semiconductor Group
2
SP... |
| Description |
Power Transistor
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| File Size |
81.25K /
10 Page |
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it Online |
Download Datasheet |
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INFINEON[Infineon Technologies AG]
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| Part No. |
SPP80N03S2-03 SPB80N03S2-03 SPI80N03S2-03
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| OCR Text |
...GS=10V, I D=80A, SMD version
1current limited by bondwire ; with an RthJC = 0.5K/W the chip is able to carry ID= 307A at 25C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Defined by design. Not s... |
| Description |
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 3.1 mOhm, 80A, NL
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 3.4 mOhm, 80A, NL
OptiMOS Power-Transistor 的OptiMOS功率晶体
80 A, 30 V, 0.0034 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB PLASTIC, TO-220, 3 PIN
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| File Size |
418.01K /
8 Page |
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it Online |
Download Datasheet |
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INFINEON[Infineon Technologies AG]
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| Part No. |
SPP80N03S2L-03 SPB80N03S2L-03 SPI80N03S2L-03
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| OCR Text |
...GS=10V, I D=80A, SMD version
1current limited by bondwire ; with an RthJC = 0.5K/W the chip is able to carry ID= 255A at 25C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Defined by design. Not s... |
| Description |
80 A, 30 V, 0.0038 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB PLASTIC, TO-220, 3 PIN
OptiMOS Power-Transistor 的OptiMOS功率晶体
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 2.8mOhm, 80A, LL
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 3.1mOhm, 80A, LL 80 A; 30V; LL; 3,1 mOhm
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| File Size |
415.20K /
8 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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