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  13c Datasheet PDF File

For 13c Found Datasheets File :: 461    Search Time::1.281ms    
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    MURS210T3

ON Semiconductor
Part No. MURS210T3
OCR Text ...dc RATED VOLTAGE APPLIED RqJC = 13c/W TJ = 175C 4 3.5 3 2.5 2 SQUARE WAVE 1.5 1 dc 0.5 0 0 0.5 1 1.5 2 2.5 IF(AV), AVERAGE FORWARD CURRENT (AMPS) TJ = 175C TC, CASE TEMPERATURE (C) Figure 7. Current Derating, Case Figure 8. Powe...
Description (MURS205T3 / MURS210T3) Surface Mount Ultrafast Power Rectifiers

File Size 41.48K  /  8 Page

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    CM400DU-12F

Mitsubishi Electric Semicon...
Mitsubishi Electric Semiconductor
Part No. CM400DU-12F
OCR Text ... 5 Per unit base = Rth(j-c) = 0.13c/W 3 FWDi part: 2 Per unit base = Rth(j-c) = 0.18C/W 100 7 5 3 2 7 5 3 2 7 5 3 2 3 2 103 7 5 3 2 Conditions: VCC = 300V VGE = 15V RG = 3.1 Tj = 25C 102 1 7 5 3 2 Irr trr 10-1 10-1 7 5 3 ...
Description HIGH POWER SWITCHING USE

File Size 69.45K  /  4 Page

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    IRF3711ZLPBF IRF3711ZPBF IRF3711ZSPBF

International Rectifier
Part No. IRF3711ZLPBF IRF3711ZPBF IRF3711ZSPBF
OCR Text ...istance Vs. Gate Voltage Fig 13c. Maximum Avalanche Energy vs. Drain Current LD VDS 15V VDS L DRIVER + VDD - RG VGS 20V D.U.T IAS tp + V - DD A D.U.T VGS Pulse Width < 1s Duty Factor < 0.1% 0.01 Fi...
Description HEXFET Power MOSFET

File Size 355.91K  /  12 Page

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    IRF3711ZL IRF3711ZS IRF3711Z

International Rectifier
Part No. IRF3711ZL IRF3711ZS IRF3711Z
OCR Text ...istance Vs. Gate Voltage Fig 13c. Maximum Avalanche Energy vs. Drain Current LD VDS 15V VDS L DRIVER + VDD - RG VGS 20V D.U.T IAS tp + V - DD D.U.T A VGS Pulse Width < 1s Duty Factor < 0.1% 0.01 F...
Description 20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
20V Single N-Channel HEXFET Power MOSFET in a TO-262 package
20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

File Size 296.17K  /  12 Page

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    MAX9996 MAX9996ETP-T MAX9996ETP MAX9996ETP_D MAX9996ETP_TD MAX9996ETPD MAX9996ETPTD

Maxim Integrated Products, Inc.
MAXIM[Maxim Integrated Products]
MAXIM - Dallas Semiconductor
Part No. MAX9996 MAX9996ETP-T MAX9996ETP MAX9996ETP_D MAX9996ETP_TD MAX9996ETPD MAX9996ETPTD
OCR Text ..................................+13c/W Operating Temperature Range (Note A) ....TC = -40C to +85C Junction Temperature ......................................................+150C Storage Temperature Range .............................-65C to...
Description SiGe High-Linearity, 1700MHz2 2200MHz Downconversion Mixer with LO Buffer/Switch
SiGe High-Linearity, 1700MHz to 2200MHz Downconversion Mixer with LO Buffer/Switch
From old datasheet system

File Size 404.00K  /  12 Page

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    P6SMB20CAT3G P6SMB20CAT3 P6SMB62CAT3 P6SMB82CAT3 P6SMB82CAT3G P6SMB15CAT3 P6SMB62CAT3G P6SMB43CAT3 P6SMB43CAT3G P6SMB13C

ONSEMI[ON Semiconductor]
Part No. P6SMB20CAT3G P6SMB20CAT3 P6SMB62CAT3 P6SMB82CAT3 P6SMB82CAT3G P6SMB15CAT3 P6SMB62CAT3G P6SMB43CAT3 P6SMB43CAT3G P6SMB13cAT3 P6SMB13cAT3G P6SMB51CAT3 P6SMB51CAT3G P6SMB91CAT3G P6SMB11CAT3 P6SMB11CAT3G P6SMB12CAT3 P6SMB12CAT3G P6SMB15CAT3G P6SMB16CAT3 P6SMB16CAT3G P6SMB18CAT3 P6SMB18CAT3G P6SMB22CAT3 P6SMB22CAT3G P6SMB24CAT3 P6SMB24CAT3G P6SMB27CAT3 P6SMB27CAT3G P6SMB30CAT3 P6SMB30CAT3G P6SMB33CAT3 P6SMB33CAT3G P6SMB36CAT3 P6SMB36CAT3G P6SMB39CAT3 P6SMB39CAT3G P6SMB47CAT3 P6SMB56CAT3 P6SMB56CAT3G P6SMB68CAT3 P6SMB68CAT3G P6SMB75CAT3 P6SMB75CAT3G P6SMB91CAT3
OCR Text ...T3, G Device Marking 11C 12C 13c 15C 16C 18C 20C 22C 24C 27C 30C 33C 36C 39C 43C 47C 51C 56C 62C 68C 75C 82C 91C 4. A transient suppressor is normally selected according to the working peak reverse voltage (VRWM), which should be equa...
Description    600 Watt Peak Power Zener Transient Voltage Suppressors

File Size 67.77K  /  6 Page

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    IRF6623 IRF6618TR1

IRF[International Rectifier]
Part No. IRF6623 IRF6618TR1
OCR Text ...istance Vs. Gate Voltage Fig 13c. Maximum Avalanche Energy Vs. Drain Current 15V LD VDS DRIVER VDS L + VDD - RG VGS 20V D.U.T IAS tp + V - DD A D.U.T VGS Pulse Width < 1s Duty Factor < 0.1% 0.01 Fi...
Description HEXFET POWER MOSFET

File Size 167.05K  /  8 Page

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    2SK3993 2SK3993-ZK

NEC
Part No. 2SK3993 2SK3993-ZK
OCR Text ...5C/W 100 10 Rth(ch-C) = 3.13c/W 1 0.1 Single pulse 0.01 100 1m 10 m 100 m 1 PW - Pulse Width - s 10 100 1000 Data Sheet D17322EJ1V0DS 3 2SK3993 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTE...
Description SWITCHING N-CHANNEL POWER MOSFET

File Size 154.49K  /  8 Page

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    MURS220T3 MURS220T3G

ONSEMI[ON Semiconductor]
Part No. MURS220T3 MURS220T3G
OCR Text ...dc RATED VOLTAGE APPLIED RqJL = 13c/W TJ = 175C Figure 5. Typical Capacitance Figure 6. Current Derating, Case PF(AV) , AVERAGE POWER DISSIPATION (WATTS) 5.0 TJ = 175C 4.0 3.0 2.0 dc SQUARE WAVE 1.0 0 0 0.5 1.0 1.5 ...
Description Surface Mount Ultrafast Power Rectifiers

File Size 62.52K  /  4 Page

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    2SK3404 2SK3404-ZJ 2SK3404-ZK

NEC, Corp.
NEC Corp.
Part No. 2SK3404 2SK3404-ZJ 2SK3404-ZK
OCR Text ...) = 83.3C/W 10 Rth(ch-C) = 3.13c/W 1 0.1 Single Pulse 0.01 10 100 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - sec Data Sheet D14638EJ2V0DS 5 2SK3404 PACKAGE DRAWINGS (Unit : mm) 5 1)TO-220AB (MP-25) 3.00.3 10.6 ...
Description SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE 开关N沟道功率MOSFET的工业用
Power MOS FET

File Size 67.17K  /  8 Page

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