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Alpha & Omega Semiconductor
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Part No. |
AOK30B60D1
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OCR Text |
... - - v t j =25c - 1.85 2.4 t j =125c - 2.2 - t j =150c - 2.3 - t j =25c - 1.47 2 t j =125c - 1.44 - t j =150c - 1.42 - v ge(th) gate-emitter threshold voltage - 5.6 - v t j =25c - - 10 t j =125c - - 400 t j =150c - - 2000 i ges gate-emitter... |
Description |
IGBT with Anti-Parallel Diode IGBTs
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File Size |
710.23K /
9 Page |
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MAXIM - Dallas Semiconductor
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Part No. |
MAX1259EWET
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OCR Text |
... 16 wide so max1259mje -55c to +125c 16 cerdip v cci v cco v batt reset logic gnd bat rst pf bf ref max1259 dip/so v cci v cco v cco v cci v n.c. bf n.c. n.c. max1259 12 3 4 1615 14 13 bat rst gnd gnd n.c. n.c. pf 56 7 8 1211 10 9 batt top... |
Description |
Battery Manager
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File Size |
235.75K /
8 Page |
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it Online |
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Alpha & Omega Semiconductor
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Part No. |
AOTF5B65M2
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OCR Text |
...- - v t j =25c - 1.57 1.98 t j =125c - 1.87 - t j =150c - 1.95 - t j =25c - 1.48 1.9 t j =125c - 1.49 - t j =150c - 1.46 - v ge(th) gate-emitter threshold voltage - 5.1 - v t j =25c - - 10 t j =125c - - 100 t j =150c - - 500 i ges gate-emit... |
Description |
IGBT with Anti-Parallel Diode IGBTs
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File Size |
563.84K /
9 Page |
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it Online |
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Alpha & Omega Semiconductor
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Part No. |
AOTF5B60D
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OCR Text |
... - - v t j =25c - 1.55 1.8 t j =125c - 1.78 - t j =150c - 1.85 - t j =25c - 1.46 1.75 t j =125c - 1.36 - t j =150c - 1.3 - v ge(th) gate-emitter threshold voltage - 6 - v t j =25c - - 10 t j =125c - - 100 t j =150c - - 500 i ges gate-emitte... |
Description |
IGBT with Anti-Parallel Diode IGBTs
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File Size |
739.61K /
9 Page |
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it Online |
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Alpha & Omega Semiconductor
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Part No. |
AOL1404
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OCR Text |
... 1.6 v i d(on) 160 a 3.3 4 t j =125c 4.6 5.6 4.5 5.6 m ? g fs 50 s v sd 0.7 1 v i s 45 a c iss 3080 3860 4630 pf c oss 520 740 960 pf c rss 350 580 810 pf r g 0.6 1.4 2.1 ? q g (4.5v) 28 36 43 nc q gs 7 9 11 nc q gd 71 21 7n c t d(on) 7n s ... |
Description |
Single LV MOSFETs (12V - 30V)
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File Size |
226.74K /
6 Page |
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it Online |
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Microsemi
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Part No. |
APT8052BFLLG
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OCR Text |
... ds = 640v, v gs = 0v, t c = 125c) gate-source leakage current (v gs = 30v, v ds = 0v) gate threshold voltage (v ds = v gs , i d = 1ma) symbol v dss i d i dm v gs v gsm p d t j ,t stg t l i ar e ar e as parameterdrain-source voltag... |
Description |
FREDFETs
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File Size |
149.21K /
5 Page |
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it Online |
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Microsemi
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Part No. |
APT50GN60BDQ3G
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OCR Text |
...v ge = 15v, i c = 50a, t j = 125c) collector cut-off current (v ce = 600v, v ge = 0v, t j = 25c) 2 collector cut-off current (v ce = 600v, v ge = 0v, t j = 125c) 2 gate-emitter leakage current (v ge = 20v) intergrated ga... |
Description |
IGBT w/ anti-parallel diode
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File Size |
231.31K /
9 Page |
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it Online |
Download Datasheet
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Alpha & Omega Semiconductor
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Part No. |
AOTF9N50
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OCR Text |
... i d =250 a v ds =400v, t j =125c breakdown voltage temperaturecoefficient i dss zero gate voltage drain current v ds =500v, v gs =0v i d =250a, v gs =0v electrical characteristics (t j =25c unless otherwise noted) static parameters para... |
Description |
Single HV MOSFETs (500V - 1000V)
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File Size |
282.35K /
6 Page |
View
it Online |
Download Datasheet
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