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  12.70-13.20ghz Datasheet PDF File

For 12.70-13.20ghz Found Datasheets File :: 111    Search Time::1.64ms    
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    EIC6472-8 EIC6472-8NH

Excelics Semiconductor, Inc.
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Part No. EIC6472-8 EIC6472-8NH
OCR Text ...M3 (dBc) G-1dB (dB) 39 12 IM3 (dBc) 27 28 29 30 31 32 33 34 35 Pout [S.C.L.] (dBm) Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1...
Description 6.40-7.20GHz 8-Watt Internally-Matched Power FET

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    HMC757

Hittite Microwave Corporation
Part No. HMC757
OCR Text ...r wire bonds of length 0.31 mm (12 mils). Electrical Specifi cations, TA = +25 C, Vdd = +7V, Idd = 395 mA[1] Parameter Frequency Range G...70 40 IP3 (dBm) IM3(dBc) 60 50 40 30 16GHz 18GHz 20GHz 22GHz 24GHz 35 6.5V 7.0V 7.5V 3...
Description GaAs pHEMT MMIC 1/2 WATT POWER AMPLIFIER, 16 - 24 GHz

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    MASW-002103-1363 MASW-002103-13630G MASW-002103-13630P MASW-002103-13635P

M/A-COM Technology Solutions, Inc.
Part No. MASW-002103-1363 MASW-002103-13630G MASW-002103-13630P MASW-002103-13635P
OCR Text ...e Temperature fixed @ 25degC 12 10 Input Power (Watts) 8 6 4 2 2GHz, 6.7W 10GHz, 3.5W 22GHz, 2W 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 Insertion Loss (dB) 3 ADVANCED: Data Sheets contain information regarding a product M/A-C...
Description HMICTM Silicon PIN Diode SPDT Switch 50 MHz - 20 GHz

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    CHA4693-QGG

United Monolithic Semiconductors
Part No. CHA4693-QGG
OCR Text ...e 14) Linear Gain (dB) 16 12 8 4 0 -4 -8 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 Frequency (GHz) Main Characteristics T...70,6 -57,9 -50,7 -51,1 -52,8 -52,4 -53,6 -53,7 -53,0 -55,7 -54,9 -58,8 -60,3 -56,0 -54,6 -54,3 -55,6...
Description 17-27GHz Variable Gain Amplifier

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    EIC1213-4

Excelics Semiconductor, Inc.
Part No. EIC1213-4
OCR Text 12.70-13.20ghz 4-Watt Internally-Matched Power FET FEATURES * * * * * * * 12.70 -13.20GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +36.0 dBm Output Power at 1dB Compression 6.5 dB Power Gain at 1dB Compression 28% Power Added...
Description 12.70-13.20ghz 4-Watt Internally-Matched Power FET

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    CHA209303 CHA2093-99F/00

United Monolithic Semiconductors
United Monolithic Semic...
Part No. CHA209303 CHA2093-99F/00
OCR Text ...1.67 x 1.03 x 0.1mm 18 16 14 12 10 8 6 4 2 0 On wafer typical measurements. Main Characteristics Tamb = +25C Symbol NF G G Paramet...70.5 58.1 40.1 20.4 1.5 -17 -36.6 -56.5 -78.9 -103.1 -127.3 -148.5 -166.3 -179.6 167.4 156.2 Ref....
Description 20-30GHz Low Noise Amplifier

File Size 95.29K  /  8 Page

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    NBB-3121

RF Micro Devices
Part No. NBB-3121
OCR Text ... Reliable, Low-Cost HBT Design 12.5dB Gain High P1dB of +15.8dBm at 6GHz Single Power Supply Operation 50 I/O Matched for High Frequency Us...70 200 -45 to +85 -65 to +150 Unit dBm mW mA C C C Caution! ESD sensitive device. The inform...
Description CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz

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    FMS20271 FMS2027-000

Filtronic Compound Semiconductors
Part No. FMS20271 FMS2027-000
OCR Text ...9 Typ -0.85 -1.3 -1.6 -2.1 -42 -12 -16 -22 23 22.5 21 Max - - - - -40 -10 -13 -12 - - - Units dB dB dB dB dB dB dB dB dBm dBm dBm Inserti...70.00 -80.00 -90.00 0 2 4 Isolation (S21 OFF) 6 8 10 12 14 16 18 20 Fr...
Description DC-20 GHZ MMIC SPDT ABSORPTIVE SWITCH

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    MASW-002103-1363V7

M/A-COM Technology Solutions, Inc.
Part No. MASW-002103-1363V7
OCR Text ...: 20m A Input Power (Watts) 12 10 Return Loss (dB) Input J1 to J2 Input J1 to J3 8 6 4 2 2GHz, 6.7W Output J2 Output J3 5.0 1 0.0 1 5.0 20.0 25.0 30.0 10GHz, 3.5W 20GHz, 2W 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 Inse...
Description HMICTM Silicon PIN Diode SPDT Switch

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    Nortel Networks
Part No. PP-10G
OCR Text ...receivers Datacom systems up to 12.5 Gb/s Description The PP-10G module consists of a low capacitance photodetector and a low noise GaAs...70 Max Unit Gb/s 0 C mm Performance Module PIN bias voltage Positive supply Power dissipat...
Description 10Gb/s PIN Preamp Receiver

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