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  112-channel Datasheet PDF File

For 112-channel Found Datasheets File :: 4801    Search Time::1.797ms    
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    APT5017 APT5017SVR

Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
Part No. APT5017 APT5017SVR
OCR Text ...0.178 (.007) 2.67 (.105) 2.84 (.112) 1.98 (.078) 2.08 (.082) 1.27 (.050) 1.40 (.055) 1.22 (.048) 1.32 (.052) 3.81 (.150) 4.06 (.160) (Base of Lead) 5.45 (.215) BSC {2 Plcs.} Heat Sink (Drain) and Leads are Plated 050-5510 ...
Description POWER MOS V 500V 30A 0.170 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 63.55K  /  4 Page

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    APT5018BFLL APT5018SFLL

ADPOW[Advanced Power Technology]
Part No. APT5018BFLL APT5018SFLL
OCR Text ...0.178 (.007) 2.67 (.105) 2.84 (.112) 1.27 (.050) 1.40 (.055) 1.98 (.078) 2.08 (.082) 5.45 (.215) BSC {2 Plcs.} 19.81 (.780) 20.32 (.800) 1.22 (.048) 1.32 (.052) 3.81 (.150) 4.06 (.160) (Base of Lead) Rev - Gate Drain Sourc...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS

File Size 53.84K  /  2 Page

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    APT5018BLL APT5018SLL

ADPOW[Advanced Power Technology]
Part No. APT5018BLL APT5018SLL
OCR Text ...0.178 (.007) 2.67 (.105) 2.84 (.112) 1.27 (.050) 1.40 (.055) 1.98 (.078) 2.08 (.082) 5.45 (.215) BSC {2 Plcs.} 19.81 (.780) 20.32 (.800) 1.22 (.048) 1.32 (.052) 3.81 (.150) 4.06 (.160) (Base of Lead) Rev - Gate Drain Sourc...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 51.49K  /  2 Page

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    APT5020BLC APT5020SLC

ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
Part No. APT5020BLC APT5020SLC
OCR Text ...0.178 (.007) 2.67 (.105) 2.84 (.112) 1.27 (.050) 1.40 (.055) 1.98 (.078) 2.08 (.082) 5.45 (.215) BSC {2 Plcs.} 19.81 (.780) 20.32 (.800) 1.22 (.048) 1.32 (.052) 3.81 (.150) 4.06 (.160) (Base of Lead) Gate Drain Source Heat...
Description POWER MOS VI 500V 26A 0.200 Ohm
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
Power MOS VITM is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs.

File Size 34.78K  /  2 Page

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    APT5020BN APT5022BN

ADPOW[Advanced Power Technology]
Part No. APT5020BN APT5022BN
OCR Text ...022BN UNIT Volts Amps 500 28 112 30 360 2.9 500 27 108 Continuous Drain Current @ TC = 25C Pulsed Drain Current Gate-Source Voltage Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperatur...
Description POWER MOS IV 500V 28.0A 0.20 Ohm / 500V 27.0A 0.22 Ohm
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

File Size 51.03K  /  4 Page

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    APT5020SVFR APT5020

Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
Part No. APT5020SVFR APT5020
OCR Text ...0.178 (.007) 2.67 (.105) 2.84 (.112) 1.98 (.078) 2.08 (.082) 1.27 (.050) 1.40 (.055) 1.22 (.048) 1.32 (.052) 3.81 (.150) 4.06 (.160) (Base of Lead) 5.45 (.215) BSC {2 Plcs.} Heat Sink (Drain) and Leads are Plated 050-5569 ...
Description 24 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 500V 26A 0.200 Ohm

File Size 64.36K  /  4 Page

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    APT5020 APT5020SVR

Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
Part No. APT5020 APT5020SVR
OCR Text ...0.178 (.007) 2.67 (.105) 2.84 (.112) 1.98 (.078) 2.08 (.082) 1.27 (.050) 1.40 (.055) 1.22 (.048) 1.32 (.052) 3.81 (.150) 4.06 (.160) (Base of Lead) 5.45 (.215) BSC {2 Plcs.} Heat Sink (Drain) and Leads are Plated 050-5522 ...
Description 24 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 500V 26A 0.200 Ohm

File Size 61.79K  /  4 Page

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    APT5024BFLL APT5024SFLL APT10078BFLL APT10078SFLL

ADPOW[Advanced Power Technology]
Part No. APT5024BFLL APT5024SFLL APT10078BFLL APT10078SFLL
OCR Text ...0.178 (.007) 2.67 (.105) 2.84 (.112) 1.27 (.050) 1.40 (.055) 1.98 (.078) 2.08 (.082) 5.45 (.215) BSC {2 Plcs.} 19.81 (.780) 20.32 (.800) 1.22 (.048) 1.32 (.052) 3.81 (.150) 4.06 (.160) (Base of Lead) Rev - Gate Drain Sourc...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 58.44K  /  2 Page

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    APT5024SVR

ADPOW[Advanced Power Technology]
Part No. APT5024SVR
OCR Text ...0.178 (.007) 2.67 (.105) 2.84 (.112) 1.98 (.078) 2.08 (.082) 1.27 (.050) 1.40 (.055) 1.22 (.048) 1.32 (.052) 3.81 (.150) 4.06 (.160) (Base of Lead) 5.45 (.215) BSC {2 Plcs.} Heat Sink (Drain) and Leads are Plated 050-5529 ...
Description POWER MOS V 500V 22A 0.240 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 32.19K  /  2 Page

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    APT5028SVR

ADPOW[Advanced Power Technology]
Part No. APT5028SVR
OCR Text ...0.178 (.007) 2.67 (.105) 2.84 (.112) 1.98 (.078) 2.08 (.082) 1.27 (.050) 1.40 (.055) 1.22 (.048) 1.32 (.052) 3.81 (.150) 4.06 (.160) (Base of Lead) 5.45 (.215) BSC {2 Plcs.} Heat Sink (Drain) and Leads are Plated 050-5616 ...
Description POWER MOS V 500V 20A 0.280 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 64.83K  /  4 Page

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For 112-channel Found Datasheets File :: 4801    Search Time::1.797ms    
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