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Samsung Electronics Inc
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Part No. |
K9F5608U0A-YIB0 K9F5608U0A-YCB0
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OCR Text |
...on - Memory Cell Array : (32M + 1024K)bit x 8bit - Data Register : (512 + 16)bit x8bit * Automatic Program and Erase - Page Program : (512 + 16)Byte - Block Erase : (16K + 512)Byte * 528-Byte Page Read Operation - Random Access : 10s(Max.) ... |
Description |
EEPROM,NAND FLASH,33MX8,CMOS,TSSOP,48PIN,PLASTIC From old datasheet system
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File Size |
260.49K /
29 Page |
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it Online |
Download Datasheet
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Macronix 旺宏
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Part No. |
MX29F080 29F080
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OCR Text |
1024K x 8] CMOS EQUAL SECTOR FLASH MEMORY
FEATURES
* * 1,048,576 x 8 byte mode only stuction Single power supply operation - 5.0V only o...bit for detection of program and erase cycle completion. Sector Group protect/unprotect for 5V/12V s... |
Description |
8M-BIT [1024K x 8] CMOS EQUAL SECTOR FLASH MEMORY From old datasheet system
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File Size |
187.50K /
31 Page |
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it Online |
Download Datasheet
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SAMSUNG[Samsung semiconductor] Samsung Electronics
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Part No. |
K5D5657DCM-F015 K5D5657DCM-F0CL
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OCR Text |
...on - Memory Cell Array : (32M + 1024K)bit x 8bit - Data Register : (512 + 16)bit x 8bit * Automatic Program and Erase - Page Program : (512 + 16)Byte - Block Erase : (16K + 512)Byte * Page Read Operation - Page Size : (512 + 16)Byte - Rando... |
Description |
MCP Specification of 256Mb NAND and 256Mb Mobile SDRAM MCP / 256Mb NAND and 256Mb Mobile SDRAM
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File Size |
1,288.81K /
74 Page |
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it Online |
Download Datasheet
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Price and Availability
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