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MCP6043T 6731A X90100 NTE943 MAX4825 1N5518 E424YDT ACTR4003
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  0.8-a Datasheet PDF File

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    2SA2070

TOSHIBA[Toshiba Semiconductor]
Part No. 2SA2070
OCR Text ...t gain: hFE = 200 to 500 (IC = -0.1 A) Low collector-emitter saturation voltage: VCE (sat) =- 0.20 V (max) High-speed switching: tf = 70 ns ...8 60 280 70 Max -100 -100 500 -0.20 -1.10 ns V V pF Unit nA nA V 1 2004-07-07 2SA2070...
Description TOSHIBA Transistor Silicon PNP Epitaxial Type

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    2SA2071

ROHM[Rohm]
Part No. 2SA2071
OCR Text ...yp. : -200mV at IC = -2A, IB = -0.2A) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SC5824 !Externa...8 Grounded Emitter Propagation Characteristics Fig.9 Transition Frequency 1000 COLLECTOR OU...
Description Power transistor (-60V, -3A)
Power transistor (−60V −3A)
Power transistor (−60V, −3A)

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    2SA2084

PANASONIC[Panasonic Semiconductor]
Part No. 2SA2084
OCR Text 0.40+0.10 -0.05 Unit: mm 0.16+0.10 -0.06 Features * High collector-emitter voltage (Base open) VCEO * Mini type package, allowing d...8+0.2 -0.3 1 2 (0.65) Absolute Maximum Ratings Ta = 25C Parameter Collector-base voltage ...
Description Silicon PNP epitaxial planar type

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    2SA2087

ROHM[Rohm]
Part No. 2SA2087
OCR Text ...ns (Unit : mm) ATV 6.8 2.5 0.65Max. 1.0 0.5 2.54 2.54 0.9 (1) (2) (3) (1) Emitter (2) Collector (3) Base 1.05 14.5 4.4 0.45 Taping specifications !Applications Low frequency amplifier High speed switching ...
Description Power transistor

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    2SA2088

ROHM[Rohm]
Part No. 2SA2088
OCR Text 0.5A) 2SA2088 !Features 1) High speed switching. (Tf : Typ. : 60ns at IC = -500mA) 2) Low saturation voltage, typically (Typ. : -150mV at ...8 Grounded Emitter Propagation Characteristics Fig.9 Transition Frequency 100 Ta=25C f=1MHz...
Description Medium power transistor ( 60V/0.5A)
Medium power transistor (−60V, −0.5A)
Medium power transistor (-60V, -0.5A)

File Size 81.84K  /  4 Page

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    2SA2091S 2SA2091STPQ

TE Connectivity, Ltd.
ROHM[Rohm]
Part No. 2SA2091S 2SA2091STPQ
OCR Text ...pically (Typ. : -200mV at IC = -0.5A, IB = -50mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SC5...8 Grounded Emitter Propagation Characteristics Fig.9 Transition Frequency 100 Ta=25C f=1MHz...
Description 1000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR SPT, SC-72, 3 PIN
Medium power transistor (60V/ 1A)
Medium power transistor (−60V, −1A)
Medium power transistor (-60V, -1A)

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    2SA2093

ROHM[Rohm]
Part No. 2SA2093
OCR Text .... : -200mV at IC = -1.0A, IB = -0.1A) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SC5880 !External dimensions (Unit : mm) ATV 6.8 2.5 0.65Max. 1.0 0.5 2.54 2.54 0.9 (1) (2) (3) (1) ...
Description Power transistor ( 60V/2A)
Power transistor (−60V, −2A)
Power transistor (-60V, -2A)

File Size 81.67K  /  4 Page

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    2SA2097

Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
Part No. 2SA2097
OCR Text ...t gain: hFE = 200 to 500 (IC = -0.5 A) Low collector-emitter saturation: VCE (sat) = -0.27 V (max) High-speed switching: tf = 55 ns (typ.) U...8 1 -0.001 -0.003 -0.01 -0.03 -0.1 -0.3 -1 -3 -10 Collector-emitter voltage ...
Description High-Speed Swtching Applications DC-DC Converter Applications

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    2SA2113

ROHM[Rohm]
Part No. 2SA2113
OCR Text ...yp. : -200mV at IC = -1A, IB = -0.1A) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SC5916 !External dimensions (Units : mm) TSMT3 0.95 0.95 (1) 2.8 1.6 1.9 0.4 (3) (2) 2.9 1.0MAX ...
Description Medium power transistor ( 30V/2A)
Medium power transistor (−30V, −2A)
Medium power transistor (-30V, -2A)

File Size 42.97K  /  4 Page

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    2SA473

Wing Shing Computer Components
Part No. 2SA473
OCR Text ...T Test Condition VCB= -30V , IE=0 VEB= -5V , IC=0 VCE= -1V , IC=-0.1A IC=-2A , IB=-0.2A VCE= -2V , IC=-0.5A Min Typ Max -10 10 240 -0.8 100 Unit A A 70 V MHZ Wing Shing Computer Components Co., (H.K.)Ltd. Homepage: http://www.wing...
Description PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER)

File Size 68.34K  /  1 Page

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