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MURATA MANUFACTURING CO LTD
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| Part No. |
LQH55DN4R7M03L LQH55DN1R0M03L
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| OCR Text |
...r choke large current type 4.7 0.3 5.0 0.3 5.0 0.3 5.7 0.3 1.7 min. 1.3 min. 1.3 min. (in mm) chip inductor (chip coil) for choke larg...6ohm 40% 0.8mhz no magnetic shield lqh55dn103m03 p 10000 h 20% 10khz 50ma 140ohm 100ohm 40% 0.5m... |
| Description |
INDUCTOR 2220 4.7UH 20% .05 OHM 2.7A
INDUCTOR, POWER 1.0UH, 4.0A, SMT
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| File Size |
44.44K /
2 Page |
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SamHop Microelectronics
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| Part No. |
STD307S STU307S
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| OCR Text |
...1 ( i - p a k ) stu/d307s ver 1.0 green product symbol v ds v gs i dm a i d units parameter -30 -53 -160 v v 20 gate-source voltage drain-so...6ohm total gate charge rise time turn-off delay time v ds =-15v,i d =-25a,v gs =-10v fall time turn-... |
| Description |
P-Channel Logic Level Enhancement Mode Field Effect Transistor
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| File Size |
129.52K /
8 Page |
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SamHop Microelectronics...
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| Part No. |
STP60L60F
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| OCR Text |
...nge without notice. s g d ver 1.0 product summary v dss i d r ds(on) (m ) @ vgs=10v gds stf series to-220f g r p p r p p symbol v ds v ...6ohm total gate charge rise time turn-off delay time fall time turn-on delay time m ohm v gs =10v , ... |
| Description |
Super high dense cell design for low RDS(ON).
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| File Size |
115.46K /
7 Page |
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SamHop Microelectronics...
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| Part No. |
STK103
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| OCR Text |
0 11 v v 20 t a =25 c gate-source voltage drain-source voltage thermal characteristics n-channel enhancement mode field effect transistor a...6ohm total gate charge rise time turn-off delay time fall time turn-on delay time m ohm v gs =10v , ... |
| Description |
Super high dense cell design for low RDS(ON).
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| File Size |
97.23K /
7 Page |
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it Online |
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SamHop Microelectronics...
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| Part No. |
STUD417L
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| OCR Text |
...acteristics v gs =0v,i s = -3a -0.75 -1.3 v notes a.pulse test:pulse width < 300us, duty cycle < 2%. b.guaranteed by design, not subject to production testing. c.starting t j =25 c,l=0.5mh,v dd = 20v .(see figure13) stu/d417l www.samhop.co... |
| Description |
Super high dense cell design for low RDS(ON).
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| File Size |
103.14K /
8 Page |
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it Online |
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SamHop Microelectronics...
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| Part No. |
STUD417S
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| OCR Text |
...acteristics v gs =0v,i s = -5a -0.8 -1.3 v notes a.surface mounted on fr4 board,t < 10sec. b.pulse test:pulse width < 300us, duty cycle < 2%. c.guaranteed by design, not subject to production testing. d.starting t j =25 c,l=0.5mh,v dd = 20... |
| Description |
Super high dense cell design for low RDS(ON).
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| File Size |
123.08K /
8 Page |
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it Online |
Download Datasheet |
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SamHop Microelectronics
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| Part No. |
STD616S STU616S
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| OCR Text |
...imum ratings v gs =0v,i s =1.5a 0.8 1.3 v notes a.pulse test:pulse width < 300us, duty ctcle < 2%. b.guaranteed by design, not subject to production testing. c.starting t j =25 c,l=0.5mh,r g =25 ,i as =9a,v dd <v (br)dss .(see figure13) e... |
| Description |
N-Channel Logic Level Enhancement Mode Field Effect Transistor
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| File Size |
140.93K /
8 Page |
View
it Online |
Download Datasheet |
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