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International Rectifier, Corp.
IRF[International Rectifier]
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| Part No. |
IRL3102S
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| OCR Text |
...
VDSS = 20V
G S
RDS(on) = 0.013W ID = 61A
Description
These HEXFET Power MOSFETs were designed specifically to meet the demands of...37A W 0.013 VGS = 7.0V, ID = 37A --- V VDS = VGS, ID = 250A --- S VDS = 16V, ID = 35A 25 VDS = 20V... |
| Description |
Power MOSFET(Vdss=20V, Rds(on)=0.013w, Id=61A) 功率MOSFET（减振钢板基本\u003d 20V的，的Rds（on）\u003d0.013瓦特，身份证\u003d 61A条）
Power MOSFET(Vdss=20V Rds(on)=0.013w Id=61A)
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| File Size |
86.82K /
8 Page |
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SAMHOP[SamHop Microelectronics Corp.]
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| Part No. |
SDB75N03L SDP75N03L
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| OCR Text |
...A, VGEN = 10V R G =1.8 ohm R L =0.20 ohm VDS=24V,ID =75A,VGS=10V VDS=24V,ID =75A,VGS=4.5V VDS =24V, ID = 75A, VGS =10V
2
3 7
11 m ohm...37A
Min Typ Max Unit
0.93 1.3 V
4
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS a
Notes a.Pul... |
| Description |
N-Channel Logic Level E nhancement Mode Field Effect Transistor
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| File Size |
441.29K /
6 Page |
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it Online |
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VISAY[Vishay Siliconix]
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| Part No. |
SUM65N20-30
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| OCR Text |
...age rDS(on) (W) ID (A)
65 a
0.030 @ VGS = 10 V
APPLICATIONS
D Automotive - 42-V EPS and ABS - DC/DC Conversion - Motor Drives D Isol...37a 140 35 61 375c 3.75 -55 to 175
Unit
V
A
mJ W _C
THERMAL RESISTANCE RATINGS
Paramet... |
| Description |
N-Channel 200-V (D-S) 175C MOSFET
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| File Size |
36.66K /
5 Page |
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it Online |
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Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
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| Part No. |
APT4012BVR
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| OCR Text |
0.120
POWER MOS V (R)
Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology m...37A j G L
1 Repetitive Rating: Pulse width limited by maximum junction
temperature. 2 Pulse Te... |
| Description |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 400V 37A 0.120 Ohm
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| File Size |
64.75K /
4 Page |
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it Online |
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INTERSIL[Intersil Corporation]
Intersil, Corp.
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| Part No. |
FSPYC260D1 FSPYC260F FSPYC260F4 FN4850 FSPYC260R4 FSPYC260F3 FSPYC260R FSPYC260R3
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| OCR Text |
...eatures
* 58A, 200V, rDS(ON) = 0.031 * UIS Rated * Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) - Rated to 300K RAD (Si) * Si...37A, VGS = 12V TC = 25oC TC = 125oC TC = -55oC TC = 25oC TC = 125oC TC = 25oC TC = 125oC TC = 25oC T... |
| Description |
From old datasheet system
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗辐N沟道MOS场效应管) 抗辐射，抗SEGR N沟道功率MOSFET（抗辐射沟道马鞍山场效应管）
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 58 A, 200 V, 0.031 ohm, N-CHANNEL, Si, POWER, MOSFET
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| File Size |
82.56K /
8 Page |
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it Online |
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