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0.148 Datasheet PDF File

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				Excelics Semiconductor, Inc.
Part No.	EPA120A
OCR Text	...b for epa120av at 18ghz 0.3 x 1200 micron recessed ?mushroom? gate si 3 n 4 passivation advanced epitaxial doping p...148.8 0.557 - 29.2 0.051 24.6 0.741 172.1 8.0 0.882 - 176.2 2.498 54.3 0.036...
Description	High Efficiency Heterojunction Power FET
File Size	51.39K / 2 Page	View it Online	Download Datasheet

				NEC
Part No.	NE9000 NE900000 NE900000G NE900075 NE900089A NE9001 NE900100 NE900100G NE900175 NE9002 NE900200 NE900200G NE900275
OCR Text	... NE9000, NE9001, and NE9002 are 0.5 micron recessed gate medium power GaAs FETs for commercial and space amplifier and oscillator applicatio...148 136 125 114 105 96 88 80 73 67 62 58 54 51 48 45 40 MAG .04 .04 .05 .06 .06 .07 .07 .07 .07 .07 ...
Description	Ku-BAND MEDIUM POWER GaAs MESFET
File Size	68.04K / 5 Page	View it Online	Download Datasheet

				Grayhill, Inc
Part No.	34DWMSP15B4M1QT 34DWMSP15B4M1RT 34DWMSP15B4M2QT 34DWMSP15B4M6RT 34DWMSP15B4M6QT 34DWMSP14B4M1RT 34DWMSP14B4M2RT 34DWMSP14B4M6RT 34DWMSP14B4M6QT 34DWMSP14B4M1QT 34DWMSP11B4M2QT 34DWMSP11B4M6RT 34DWMSP12B4M2QT 34DWMSP13B4M1QT 34DWMSP13B4M2RT 34DWMSP11B4M1RT 34DWMSP13B4M2QT 34DWMSP11B4M1QT 34DWMSP12B4M6RT 34DWMSP13B4M1RT 34DWMSP13B4M6RT 34DWMSP31B4M2QT 34DWMSP31B4M2RT 34DWMSP31B4M1QT 34DWMSP31B4M1RT 34DWMSP31B4M6RT 34DWMSP34B4M2RT 34DWMSP34B4M6RT 34DWMSP34B4M1RT 34DWMSP34B4M6QT 34DWMSP33B4M1QT 34DWMSP33B4M2QT 34DWMSP33B4M6QT 34DWMSP25B4M2QT 34DWMSP25B4M6QT
OCR Text	...0 (3.30) .100 (2.54) typ. .020 (0.51) .320 (8.13) .200 (5.08) .029 (0.75) ?.100 (?2.52) epoxy seal ()=momentary schematic 02comm. 1 3 05comm...148 (3.76) ?.180 (?4.58) .416 (10.57) .543 (13.80) .185 (4.70) .130 (3.30) .100 (2.54) typ. .020 (0....
Description	Sealed Sub-Miniature Toggle Switches Sealed Sub-Miniature Toggle Switches
File Size	126.26K / 3 Page	View it Online	Download Datasheet

				Hittite Microwave Corporation
Part No.	HMC432
OCR Text	0 GHz Features Ultra Low SSB Phase Noise: -148 dBc/Hz Single-Ended I/O's Output Power: -3 to -9 dBm Single DC Supply: +3V @ 42 mA 9 mm2 Ultra Small Package: SOT26 Typical Applications Prescaler for DC to C Band PLL Applications: * UN...
Description	SMT GaAs HBT MMIC DIVIDE-BY-2, DC - 8.0 GHz
File Size	216.70K / 6 Page	View it Online	Download Datasheet

				Amphenol, Corp. HP[Agilent(Hewlett-Packard)] Agilent (Hewlett-Packard)
Part No.	MSA-0600 MSA-0600-GP4
OCR Text	... V d) * 3 dB Bandwidth: DC to 1.0 GHz * High Gain: 19.5 dB Typical at 0.5 GHz * Low Noise Figure: 2.8 dB Typical at 0.5 GHz broad band IF...148 -134 -125 -121 -120 -119 -121 -123 -134 -149 -157 -171 -174 179 170 162 20.6 20.4 20.2 20.0 1...
Description	Cascadable Silicon Bipolar MMIC Amplifier(可级联的硅双极型单片式微波集成电路放大器) 级联硅双极MMIC放大器（可级联的硅双极型单片式微波集成电路放大器
File Size	51.35K / 4 Page	View it Online	Download Datasheet

				NEC Corp.
Part No.	2SC5178 2SC5178-T1 2SC5178-T2
OCR Text	...CE = 1 V, IC = 5 mA, f = 2 GHz 0.4 -0.05 +0.1 PACKAGE DIMENSIONS (Units: mm) 0.4 -0.05 0.16 -0.06 +0.1 EIAJ: SC-61 2.90.2 (1.8) 0...148.3 137.6 126.9 116.5 107.3 96.6 88.5 80.5 72.8 64.6 58.1 51.3 44.3 MAG 0.026 0.061 0.084 0.106 0....
Description	NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
File Size	80.43K / 12 Page	View it Online	Download Datasheet

				United Monolithic Semicondu... United Monolithic Semiconductors GmbH
Part No.	CHA2395 CHA2395-99F_00 CHA2395-99F/00
OCR Text	...ufactured with a HEMT process : 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is av...148,72 -162,95 -178,98 S12 dB -56,39 -55,20 -53,92 -51,99 -50,31 -50,32 -49,22 -49,15 -48,70 -51,...
Description	36-40GHz Low Noise Very High Gain Amplifier 36 - 40GHz的低噪声放大器增益甚
File Size	86.24K / 6 Page	View it Online	Download Datasheet

				http:// PLL[PhaseLink Corporation]
Part No.	PL660 P66X-XXQC P66X-XXOC PL660-08 PL660-09 PL663-07 PL663-08 PL663-09 PL663-17 PL663-18 PL663-19 PL663-28 PL663-29 PL66X-XXOC PL66X-XXOCL PL66X-XXOCL-R PL66X-XXOC-R PL66X-XXQC PL66X-XXQCL PL66X-XXQCL-R PL66X-XXQC-R
OCR Text	...low jitter o RMS phase jitter < 0.25 ps (12 kHz to 20 MHz) o RMS period jitter < 2.5 ps typ. Low phase noise o -145 dBc/Hz @ 100 kHz offset ...148 -148 -148 -146 -146 10 MHz -149 -149 -150 -150 -150 -148 -148 -148 -146 -148 PL660-08 PL6...
Description	Analog Frequency Multiplier
File Size	482.03K / 15 Page	View it Online	Download Datasheet

				Seoul Semiconductor
Part No.	WH201
OCR Text	...proved by SSC-QP-0401-06(REV.0) SEOUL SEMICONDUCTOR CO,. LTD. 148-29 Kasan-Dong, Keumchun-Gu, Seoul, Korea TEL: 82-2-3281-6269 FAX: 82-2-858-5537 WH201 - 1/7 - 1. Features Package : 3.0 x 1.5 x 1.4 mm Color coordinates: accor...
Description	CHIP LED DEVICE
File Size	310.63K / 7 Page	View it Online	Download Datasheet

				Sanyo Semicon Device
Part No.	2SC6023-TR-E
OCR Text	...ff current i cbo v cb =5v, i e =0 1.0 m a emitter cutoff current i ebo v eb =1v, i c =0 1 m a dc current gain h fe v ce =3v, i c =15ma 80 16...148 38.9 0.396 --127.6 3200 0.395 154.9 2.527 47.5 0.154 38.7 0.398 --130.9 3400 0.402 149.4 2.387 4...
Description	UHF to C Band Low-Noise Amplifier and OSC Applications
File Size	858.36K / 15 Page	View it Online	Download Datasheet

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