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  0.0074 Datasheet PDF File

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    SEMELAB
Part No. 2N6513
OCR Text 0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30....
Description Bipolar NPN Device in a Hermetically sealed TO3 Metal Package

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    SEME-LAB[Seme LAB]
Part No. 2N6687
OCR Text 0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30....
Description Bipolar NPN Device in a Hermetically sealed TO3 Metal Package

File Size 10.67K  /  1 Page

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    SemeLAB
Part No. 2N6687
OCR Text 0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30....
Description Bipolar NPN Device in a Hermetically sealed TO3 Metal Package

File Size 15.40K  /  2 Page

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    SANYO
Part No. 2SC3648
OCR Text ... Ratings (-)180 (-)160 (-)6 (-)0.7 (-)1.5 500 Unit V V V A A mW W Mounted on ceramic board (250mm2x0.8mm) Tj Tstg 1.3 150 -55 to +150 C C Electrical Characteristics at Ta = 25C Parameter Collector Cutoff Current Emitter Cu...
Description NPN Epitaxial Planar Silicon Transistors High-Voltage Switching Predriver Applications

File Size 124.34K  /  5 Page

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    2SC5247

Hitachi Semiconductor
Part No. 2SC5247
OCR Text ... 10.5 14 -- Typ -- -- -- -- 100 0.47 13.5 17 1.2 Max -- 1 1 10 160 0.75 -- -- 2.5 pF GHz dB dB Unit V A mA A Test conditions I C = 10 A, IE = 0 VCB = 12 V, IE = 0 VCE = 8 V, RBE = VEB = 1.5 V, IC = 0 VCE = 4 V, IC = 20 mA VCB = 5 V, IE = 0...
Description Silicon NPN Epitaxial

File Size 63.39K  /  10 Page

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    SANYO
Part No. 2SC5637
OCR Text ...ns unit:mm 2174 [2SC5637] 16.0 5.0 3.4 5.6 3.1 0.8 22.0 21.0 4.0 2.8 2.0 0.7 1 2 5.45 3.5 3 20.4 0.9 Specifications Absolute Maximum Ratings at Ta = 25C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitt...
Description Horizontal Deflection Switching Transistors

File Size 47.33K  /  5 Page

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    2SC5720

Toshiba Semiconductor
Part No. 2SC5720
OCR Text ...ration Voltage: VCE (sat) (1) = 0.25 V (max) (IC = 3 A/IB = 60 mA) Unit: mm Maximum Ratings (Ta = 25C) Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector power dissipation Ju...
Description MEDIUM POWER AMPLIFIER APPLICATIONS STOROBO FLASH APPLICATIONS

File Size 102.02K  /  4 Page

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    2SC5722

Sanyo Semicon Device
Part No. 2SC5722
OCR Text 0 20.0 3.3 5.0 IB1 OUTPUT IB2 RB + 470F VCC=200V INPUT VR 50 RL=20 + 26.0 100F 1.0 VBE= --2V 2.0 3.4 20.7 2.0 0.6 1.2 2.8 1 2 3 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PBL 5.45 5.4...
Description From old datasheet system
NPN PLANAR SILICON TRANSISTOR

File Size 48.65K  /  3 Page

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    SANYO
Part No. 2SC5782
OCR Text ... thin flat lead package. (1.4mm!0.8mm!0.6mm) 1.4 0.3 0.25 0.1 3 0.8 0.2 0.3 1 0.45 2 1.4 0.6 1 : Base 2 : Emitter 3 : Collector SANYO : SSFP Specifications Absolute Maximum Ratings at Ta=25C Parameter...
Description Ultrahigh-Frequency Transistors

File Size 39.51K  /  8 Page

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    SANYO
Part No. 2SC5960
OCR Text ... : mm 2022A [2SC5960] 15.6 14.0 3.2 4.8 High breakdown voltage and high reliability. High-speed switching. Wide ASO. Adoption of MBIT process. 2.6 1.6 2.0 1.3 20.0 1.2 15.0 20.0 3.5 2.0 0.6 1.0 1 0.6 ...
Description High-Voltage High-Speed Switching Transistors

File Size 36.04K  /  5 Page

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