0.0019 pdf Datasheet P7 Full Text Search --- IC-ON-LINE


	Part Number	Hot Search : 1879223 EPR1228 IS25C16 CXA3117N SCN2661 TT2218LS AJ32G3 STEVA
	Product Description
	Full Text Search

0.0019 Datasheet PDF File

For 0.0019 Found Datasheets File :: 4081 Search Time::1.281ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | <7> | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |

				NEC, Corp. NEC Corp.
Part No.	2SK3377 2SK3377-Z D14328EJ1V0DS00
OCR Text	...) RDS(on)2 = 78 m MAX. (VGS = 4.0 V, ID = 10 A) * Low Ciss : Ciss = 760 pF TYP. * Built-in Gate Protection Diode * TO-251/TO-252 package (TO-251) ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Drain to Source Voltage Gate to Source Voltage Dra...
Description	Switching N-channel power MOS FET industrial use N沟道开关功率场效应晶体工业 DIODE SCHOTTKY SINGLE 30V 150mW 0.38V-vf 200mA-IFM 1mA-IF 0.2uA-IR SOT-523 3K/REEL From old datasheet system
File Size	40.18K / 4 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SK3378
OCR Text	...mina ceramic board (12.5 x 20 x 0.7 mm) Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltege drain current Symbol V(BR)DSS V(BR)GSS I...
Description	Silicon N Channel MOS FET High Speed Switching
File Size	26.28K / 5 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SK3380
OCR Text	...t Conditions I D = 100 A, VGS = 0 I G = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 30 V, VGS = 0 I D = 10A, VDS = 5 V ID = 150 mA,VGS = 10 V Note 2 ID = 50 mA,VGS = 4 V Note 2 ID = 150 mA, VDS =10 V Note 2 Gate to source cutoff voltage VG...
Description	Silicon N Channel MOS FET High Speed Switching
File Size	25.17K / 5 Page	View it Online	Download Datasheet

				NEC, Corp. NEC Corp. NEC[NEC]
Part No.	2SK3385 2SK3385-Z D14472EJ1V0DS00 2SK3377 2SK3377-Z
OCR Text	...) RDS(on)2 = 45 m MAX. (VGS = 4.0 V, ID = 15 A) * Low Ciss : Ciss = 1500 pF TYP. * Built-in Gate Protection Diode * TO-251/TO-252 package (TO-251) ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Drain to Source Voltage Gate to Source Voltage Dr...
Description	Switching N-channel power MOS FET industrial use N沟道开关功率场效应晶体工业 From old datasheet system
File Size	40.18K / 4 Page	View it Online	Download Datasheet

				NEC Corp. NEC[NEC]
Part No.	2SK3386 2SK3386-Z D14471EJ1V0DS00
OCR Text	...) RDS(on)2 = 36 m MAX. (VGS = 4.0 V, ID = 17 A) * Low Ciss : Ciss = 2100 pF TYP. * Built-in Gate Protection Diode * TO-251/TO-252 package (TO-251) ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Drain to Source Voltage Gate to Source Voltage Dr...
Description	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE From old datasheet system
File Size	40.20K / 4 Page	View it Online	Download Datasheet

				TOSHIBA[Toshiba Semiconductor]
Part No.	2SK3388
OCR Text	...ge temperature range Weight: 0.74 g (typ.) Circuit Configuration Notice: Thermal Characteristics Characteristics Thermal resistance, channel to case Symbol Rth (ch-c) Max 1.00 Unit C/W Please use the S1 pin for gate input sign...
Description	Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Switching Regulator, DC-DC Converter Applications Motor Drive Applications TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
File Size	221.66K / 6 Page	View it Online	Download Datasheet

				Toshiba, Corp. TOSHIBA[Toshiba Semiconductor]
Part No.	2SK3389
OCR Text	...30 V) Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Tc = 25C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage DC (Note 1) Pulse (Note 1) Symbol VDSS VDGR ...
Description	Switching Regulator/ DC-DC Converter Applications Motor Drive Applications Switching Regulator, DC-DC Converter Applications Motor Drive Applications 开关稳压器，DC - DC转换应用电机驱动应用 Switching Regulator DC-DC Converter Applications Motor Drive Applications
File Size	318.49K / 6 Page	View it Online	Download Datasheet

				Hitachi Semiconductor
Part No.	2SK3390
OCR Text	...- -- 27.5 10.5 -- -- Max 10 5 3.0 -- -- -- -- Unit A A V pF pF W % Test Conditions VDS = 13.7 V, VGS = 0 VGS = 10V, VDS = 0 ID = 1mA, VDS = 13.7V VGS = 5V, VDS = 0, f = 1MHz VDS = 13.7V, VGS = 0, f = 1MHz VDS = 13.7V, IDO = 0.25A f = 836 MH...
Description	Silicon N Channel MOS FET UHF Power Amplifier
File Size	76.95K / 7 Page	View it Online	Download Datasheet

				RENESAS[Renesas Electronics Corporation]
Part No.	2SK3391 2SK3391JX
OCR Text	...ch Note2 Tch Tstg Ratings 17 10 0.3 0.75 5 150 -45 to +150 Unit V V A A W C C Rev.2.00, Apr.14.2004, page 1 of 4 2SK3391 Electrical Characteristics (Ta = 25C) Item Zero gate voltage drain current Gate to source leak current Gate ...
Description	Silicon N-Channel MOS FET UHF Power Amplifier
File Size	59.31K / 5 Page	View it Online	Download Datasheet

				PANASONIC[Panasonic Semiconductor]
Part No.	2SK3396
OCR Text	...citance (common source) Crss 0.33+0.05 -0.02 3 0.10+0.05 -0.02 (0.40) (0.40) 0.800.05 1.200.05 5 0.15 min. 0.23+0.05 -0.02 1 2 0 to 0.01 Parameter Gate-drain voltage (Source open) Gate-source voltage (Drain open) ...
Description	Silicon N-Channel Junction FET
File Size	64.47K / 3 Page	View it Online	Download Datasheet

For 0.0019 Found Datasheets File :: 4081 Search Time::1.281ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | <7> | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |