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Savantic
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Part No. |
2SD425 2SD426
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OCR Text |
...breakdown voltage 2sd426 i c =0.1a ;i b =0 120 v v (br)ebo emitter-base breakdown voltage i e =10ma ;i c =0 5 v 2sd425 i c =7a; i b =0.7a v cesat collector-emitter saturation voltage 2sd426 i c =6a; i b =0.6a 3.0 v v... |
Description |
Silicon NPN Power Transistors TO-3 package
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File Size |
100.14K /
3 Page |
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it Online |
Download Datasheet
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Infineon Technologies A...
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Part No. |
SGD02N120 SGB02N120 SGI02N120
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OCR Text |
...rdering code sgp02n120 1200v 2a 0.11mj 150 c to-220ab q67040-s4270 sgb02n120 to-263ab(d2pak) q67040-s4271 sgd02n120 to-252aa(dpak) q67040-s...7a t c , case temperature t c , case temperature figure 3. power dissipation as a function of case... |
Description |
Fast S-IGBT in NPT-technology
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File Size |
383.19K /
12 Page |
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it Online |
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Microsemi
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Part No. |
APT27GA90BD15 APT27GA90SD15
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OCR Text |
...lead temperature for soldering: 0.063" from case for 10 seconds 300 combi (igbt and diode) typical applications zvs phase shifted and oth...7a i c = 14a i c = 28a i c = 14a i c = 28a 13v 6v 15v i c = 14a t j = 25c v ce = 720v v ce =... |
Description |
IGBT w/ anti-parallel diode
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File Size |
226.56K /
9 Page |
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it Online |
Download Datasheet
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Price and Availability
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