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  wsi Datasheet PDF File

For wsi Found Datasheets File :: 151    Search Time::1.032ms    
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    WSI
Part No. PSD303
OCR Text ...microcontroller address space. wsi's PSD3XX Family Architecture (Figure 1) can efficiently interface with, and enhance, any low-voltage 8- or 16-bit microcontroller system. This is the first solution that provides microcontrollers with por...
Description 在系统可编程微控制器外围器件,16K位SRAM,19个可编程I/O,通用PLD有16个输入
From old datasheet system

File Size 667.59K  /  127 Page

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    WSI
Part No. PSD4235G2
OCR Text ...5400 Fax: 510-657-8495 800-TEAM-wsi (800-832-6974) Web Site: http://www.waferscale.com E-mail: info@waferscale.com PSD4000 Series PSD4235G2 Flash In-System-Programmable Peripherals for 16-Bit MCUs Table of Contents Introduction .........
Description Flash In-System-Programmable Peripherals for 16-Bit MCUs
From old datasheet system

File Size 561.37K  /  114 Page

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    California Eastern Laboratories Inc
Part No. NE5520379A-T1A
OCR Text ... NEWMOS technology (NEC's 0.6 m wsi gate lateral MOSFET) and housed in a surface mount package. This device can deliver 35.5 dBm output power at 915 MHz AT 3.2 V or 34.6 dBm output power at 2.8 V by varying the gate voltage as a power contr...
Description Transistor - Datasheet Reference
From old datasheet system

File Size 70.16K  /  6 Page

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    ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. WS57LV291C-90T WS57LV291C-90 WS57LV291C-70T WS57LV291C-70 WS57LV291C 7925
OCR Text ...TEMPERATURE RANGE Comm'l Comm'l wsi MANUFACTURING PROCEDURE Standard Standard NOTE: 8. The actual part marking will not include the initials "WS." PROGRAMMING/ALGORITHMS/ERASURE/PROGRAMMERS REFER TO PAGE 5-1 The WS57LV291C is program...
Description HIGH SPEED 3.3 VOLT 2K x 8 CMOS PROM/RPROM
From old datasheet system

File Size 46.51K  /  6 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. NM27LV010 NM27LV010V250 NM27LV010TE250 NM27LV010VE250 NM27LV010T200 NM27LV010T250 NM27LV010TE200 NM27LV010V200 NM27LV010VE200
OCR Text ...77-1 AMGTM is a trademark of wsi, Incorporated. (c) 1998 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com NM27LV010 1,048,576-Bit (128k x 8) Low Voltage EPROM Connection Diagrams PLCC Pin Configuration A12 A15...
Description 1,048,576-Bit (128k x 8) Low Voltage EPROM
1048576-Bit (128k x 8) Low Voltage EPROM

File Size 100.72K  /  10 Page

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    NE5510279A-T1 NE5510279A

NEC Corp.
NEC[NEC]
CEL[California Eastern Labs]
Part No. NE5510279A-T1 NE5510279A
OCR Text ... NEWMOS technology (NEC's 0.6 m wsi gate lateral MOSFET) and housed in a surface mount package. This device can deliver 32 dBm output power with 45% power added efficiency at 1.8 GHz under the 3.5 V supply voltage, or can deliver 31 dBm out...
Description 3.5V OPERATION SILICON RF POWER MOSFET FOR GSM1800 TRANSMISSION AMPLIFIERS
3.5 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 TRANSMISSION AMPLIFIERS

File Size 38.62K  /  5 Page

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    NEC Corp.
NEC[NEC]
Part No. NE5520279A-T1 NE5520279A
OCR Text ... NEWMOS technology (NEC's 0.6 m wsi gate lateral MOSFET) and housed in a surface mount package. APPLICATIONS * DIGITAL CELLULAR PHONES: 3.2 V DCS1800 Handsets * 0.7-2.5 GHz FIXED WIRELESS ACCESS * W-LAN * SHORT RANGE WIRELESS * RETAIL B...
Description NECS 3.2 V 2 W L&S BAND MEDIUM POWER SILICON LD-MOSFET
NECS 3.2 V / 2 W / L&S BAND MEDIUM POWER SILICON LD-MOSFET
NECS 3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET

File Size 163.74K  /  7 Page

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    NE5520379A-T1A-A NE5520379A

California Eastern Labs
Part No. NE5520379A-T1A-A NE5520379A
OCR Text ... NEWMOS technology (NEC's 0.6 m wsi gate lateral MOSFET) and housed in a surface mount package. This device can deliver 35.5 dBm output power at 915 MHz and 3.2 V, or 34.6 dBm output power at 2.8 V by varying the gate voltage as a power con...
Description NECS 3.2V, 3W, L/S BAND MEDIUM POWER SILICON LD-MOSFET

File Size 290.17K  /  9 Page

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    FM27C512 FM27C512V FM27C512_01 FM27C512Q FM27C512QE FM27C512VE FM27C512QE120 FM27C51201 FM27C512Q120 FM27C512Q90 FM27C51

ETC[ETC]
Fairchild Semiconductor
Part No. FM27C512 FM27C512V FM27C512_01 FM27C512Q FM27C512QE FM27C512VE FM27C512QE120 FM27C51201 FM27C512Q120 FM27C512Q90 FM27C512V120 FM27C512V90 FM27C512QE90 FM27C512VE90 FM27C512Q-90 FM27C512QE-120 FM27C512X90 FM27C512X120 FM27C512X150
OCR Text ...S800035-1 AMG is a trademark of wsi, Inc. (c) 2001 Fairchild Semiconductor Corporation FM27C512 Rev. A 1 www.fairchildsemi.com FM27C512 524,288-Bit (64K x 8) High Performance CMOS EPROM Connection Diagrams 27C040 27C010 27C2...
Description    524,288-Bit (64K x 8) High Performance CMOS EPROM
524288-Bit (64Kx 8) High Performance CMOS EPROM(95.70 k)
524,288-Bit (64K x 8)High Performance CMOS EPROM

File Size 93.36K  /  10 Page

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    NE55410GR NE55410GR-T3-AZ 55410

CEL[California Eastern Labs]
Part No. NE55410GR NE55410GR-T3-AZ 55410
OCR Text ...sing our NEWMOS technology (our wsi gate lateral MOS FET), and its nitride surface passivation and quadruple layer aluminum silicon metalization offer a high degree of reliability. FEATURES * Two different FET's (Q1 : Pout = 2 W, Q2 : P...
Description N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER

File Size 314.27K  /  13 Page

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For wsi Found Datasheets File :: 151    Search Time::1.032ms    
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