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    Shenzhen Winsemi Microelectronics Co., Ltd
Part No. sBP13007-s
OCR Text ...t d . , a l l ri g h t r e s er v ed . high high high high voltage voltage voltage voltage fast-switching fast-switching fast-switching fast-switching npn npn npn npn power power power power transistor transistor transistor transistor featu...
Description High voltage Fast-switchingNPN Power Transistor

File Size 383.79K  /  5 Page

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    Seiko
Part No. s-8323 s-8327
OCR Text ...ns low voltage operation: 0.9 v (i out = 1ma) power supplies for portable equipment such as low current consumption : pagers, handy calculators, and remote controllers during operation: 17.2 m a (typ.) constant voltage power suppl...
Description (s-8323 / s-8327) sMALL PACKAGE PWM CONTROL sTEP-UP sWITCHING REGULATOR

File Size 643.27K  /  65 Page

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    ELM13409CA-S

ELM Technology Corporation
Part No. ELM13409CA-s
OCR Text ...te drain-source voltage vds -30 v gate-source voltage vgs 20 v continuous drain current ta=25c id -2.6 a 1 ta=70c -2.2 pulsed drain curren...s uses advanced trench technology to provide excellent rds(on), low gate charge and low gate ...
Description single P-channel MOsFET

File Size 311.46K  /  4 Page

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    ELM13407CA-S

ELM Technology Corporation
Part No. ELM13407CA-s
OCR Text ...te drain-source voltage vds -30 v gate-source voltage vgs 20 v continuous drain current ta=25c id -4.1 a 1 ta=70c -3.5 pulsed drain curren...s uses advanced trench technology to provide excellent rds(on), low gate charge and low gate ...
Description single P-channel MOsFET

File Size 311.46K  /  4 Page

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    ELM13406CA-S

ELM Technology Corporation
Part No. ELM13406CA-s
OCR Text ...ote drain-source voltage vds 30 v gate-source voltage vgs 20 v continuous drain current ta=25c id 3.6 a 1 ta=70c 2.9 pulsed drain current ...s uses advanced trench technology to provide excellent rds(on), low gate charge and low gate ...
Description single N-channel MOsFET

File Size 332.08K  /  4 Page

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    ELM13405CA-S

ELM Technology Corporation
Part No. ELM13405CA-s
OCR Text ...te drain-source voltage vds -30 v gate-source voltage vgs 12 v continuous drain current ta=25c id -2.6 a 1 ta=70c -2.2 pulsed drain curren...s uses advanced trench technology to provide excellent rds(on), low gate charge and low gate ...
Description single P-channel MOsFET

File Size 309.85K  /  4 Page

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    ELM13404CA-S

ELM Technology Corporation
Part No. ELM13404CA-s
OCR Text ...ote drain-source voltage vds 30 v gate-source voltage vgs 20 v continuous drain current ta=25c id 5.8 a 1 ta=70c 4.9 pulsed drain current ...s uses advanced trench technology to provide excellent rds(on), low gate charge and low gate ...
Description single N-channel MOsFET

File Size 314.08K  /  4 Page

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    ELM13403CA-S

ELM Technology Corporation
Part No. ELM13403CA-s
OCR Text ...te drain-source voltage vds -30 v gate-source voltage vgs 12 v continuous drain current ta=25c id -2.6 a 1 ta=70c -2.2 pulsed drain curren...s uses advanced trench technology to provide excellent rds(on), low gate charge and low gate ...
Description single P-channel MOsFET

File Size 335.80K  /  4 Page

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    ELM13402CA-S

ELM Technology Corporation
Part No. ELM13402CA-s
OCR Text ...ote drain-source voltage vds 30 v gate-source voltage vgs 12 v continuous drain current ta=25c id 4.0 a 1 ta=70c 3.4 pulsed drain current ...s uses advanced trench technology to provide excellent rds(on), low gate charge and low gate ...
Description single N-channel MOsFET

File Size 331.85K  /  4 Page

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    ELM13401CA-S

ELM Technology Corporation
Part No. ELM13401CA-s
OCR Text ...te drain-source voltage vds -30 v gate-source voltage vgs 12 v continuous drain current ta=25c id -4.2 a 1 ta=70c -3.5 pulsed drain curren...s uses advanced trench technology to provide excellent rds(on), low gate charge and low gate ...
Description single P-channel MOsFET

File Size 298.88K  /  4 Page

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