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rge Datasheet PDF File

For rge Found Datasheets File :: 1933 Search Time::1.078ms
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				Intersil, Corp. INTERSIL[Intersil Corporation]
Part No.	HGTP15N40C1 HGTP15N40E1 HGTP15N50C1 HGTP15N50E1 HGTH20N40C1 HGTH20N40E1 HGTH20N50C1 HGTH20N50E1
OCR Text	... 400 500 Collector-Gate Voltage rge = 1M. . . . . . . . . . . . . . . . VCGR 400 500 Reverse Collector-Emitter Voltage . . . . . . . . . . . . VCES(rev.) -5 -5 Gate-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGE...
Description	15A, 20A, 400V and 500V N-Channel IGBTs 15 A, 500 V, N-CHANNEL IGBT, TO-220AB 15A 20A 400V and 500V N-Channel IGBTs 15A/ 20A/ 400V and 500V N-Channel IGBTs
File Size	35.19K / 5 Page	View it Online	Download Datasheet

				ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
Part No.	STP10NB60SFP STGP10NB60SFP
OCR Text	...Loss Vclamp = 480 V, IC = 10 A, rge = 1K , VGE = 15 V Tj = 125 C Test Conditions Vclamp = 480 V, IC = 10 A, rge = 1K , VGE = 15 V Min. Typ. 2.2 1.2 1.2 5.0 3.8 1.2 1.9 8.0 Max. Unit s s s mJ s s s mJ (q)Pulsed: Pulse duration = 300 s, d...
Description	N-CHANNEL 10A - 600V - TO-220FP PowerMesh?IGBT N-CHANNEL 10A - 600V - TO-220FP PowerMesh IGBT N-CHANNEL 10A - 600V - TO-220FP PowerMesh⑩ IGBT N-CHANNEL 10A 600V TO-220 POWERMWSH IGBT
File Size	314.75K / 8 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	HGTD10N40F1 HGTD10N40F1S HGTD10N50F1 HGTD10N50F1S
OCR Text	.... . VCES Collector-Gate Voltage rge = 1M . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VCGR Gate-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V...
Description	10A/ 400V and 500V N-Channel IGBTs 10A, 400V and 500V N-Channel IGBTs
File Size	32.54K / 4 Page	View it Online	Download Datasheet

				Quantum Research Group ltd ETC[ETC] Electronic Theatre Controls, Inc.
Part No.	QT118H QT118H-D QT118H-IS QT118H-S
OCR Text	...NS 1 S tart Do ne C ha rge Amp If a relatively large electrode surface is desired, and if tests show that the electrode has more capacitance than the QT118H can tolerate, the electrode can be made into a Even when battery pow...
Description	0.5-6.5V; 20mA; charge-transfer touch sensor. For light switches, industrial panels, appliance control, security systems, access systems, pointing devices, elevator buttoms, toys & games CHArge-TRANSFER TOUCH SENSOR 电荷转移触摸传感
File Size	431.32K / 13 Page	View it Online	Download Datasheet

				Siemens Semiconductor G... SIEMENS[Siemens Semiconductor Group] Infineon SIEMENS AG
Part No.	BSM100GB120DN2K 100B12K2 C67070-A2107-A70
OCR Text	... Unit V VCE VCGR VGE IC rge = 20 k Gate-emitter voltage DC collector current 20 A 145 100 TC = 25 C TC = 80 C Pulsed collector current, tp = 1 ms ICpuls 290 200 TC = 25 C TC = 80 C Power dissipation per IGBT Ptot...
Description	From old datasheet system IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
File Size	113.27K / 9 Page	View it Online	Download Datasheet

				Siemens Semiconductor G... SIEMENS[Siemens Semiconductor Group] Infineon SIEMENS AG
Part No.	BSM100GB120DN2 100B12N2 C67076-A2107-A70
OCR Text	... Unit V VCE VCGR VGE IC rge = 20 k Gate-emitter voltage DC collector current 20 A 150 100 TC = 25 C TC = 80 C Pulsed collector current, tp = 1 ms ICpuls 300 200 TC = 25 C TC = 80 C Power dissipation per IGBT Ptot...
Description	From old datasheet system IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
File Size	131.39K / 9 Page	View it Online	Download Datasheet

				SIEMENS AG SIEMENS[Siemens Semiconductor Group]
Part No.	BSM100GB170DN2 100B17N2 C67070-A2703-A67
OCR Text	...700V 145A VCE VCGR VGE IC rge = 20 k Gate-emitter voltage DC collector current 20 A 145 100 TC = 25 C TC = 80 C Pulsed collector current, tp = 1 ms ICpuls 290 200 TC = 25 C TC = 80 C Power dissipation per IGBT Ptot...
Description	IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) From old datasheet system
File Size	130.11K / 9 Page	View it Online	Download Datasheet

				ST Microelectronics STMicroelectronics
Part No.	STGB20NB32LZ STGB20NB32LZ-1
OCR Text	...Tc= 150C BV(ECR) BVGE ICES IGES rge Emitter Collector Break-down Voltage Gate Emitter Break-down Voltage Collector cut-off Current (VGE = 0) Gate-Emitter Leakage Current (VCE = 0) Gate Emitter Resistance IC = 75 mA, Tc = 25C IG = 2 mA VCE ...
Description	N-CHANNEL CLAMPED 20A - D2PAK/I2PAK INTERNALLY CLAMPED POWERMESH IGBT N-CHANNEL CLAMPED 20A - D2PAK/I2PAK INTERNALLY CLAMPED PowerMESH IGBT
File Size	461.09K / 11 Page	View it Online	Download Datasheet

				STMicroelectronics N.V. STMICROELECTRONICS[STMicroelectronics]
Part No.	STGB20NB37LZ
OCR Text	... V BV (ECR) BV GE I CES IGES rge Emitter Collector Break-down Voltage Gate Emitter Break-down Voltage Collector cut-off Current (VGE = 0) Gate-Emitter Leakage Current (VCE = 0) Gate Emitter Resistanc e 16 10 100 1000 30 V A A A...
Description	N-CHANNEL CLAMPED 20A D2PAK INTERNALLY CLAMPED PowerMESH IGBT N通道钳位20A条采用D2PAK IGBT的内部钳位PowerMESH N-CHANNEL CLAMPED 20A D2PAK INTERNALLY CLAMPED PowerMESH IGBT
File Size	49.58K / 6 Page	View it Online	Download Datasheet

				ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
Part No.	STGB3NB60FD STGD3NB60F STGP3NB60F STGP3NB60FD STGF3NB60FD STGD3NB60FT4 STGB3NB60FDT4
OCR Text	...j = 125C Vcc = 480 V, IC = 3 A, rge = 10 , VGE = 15 V Tj = 25 C J ns ns ns ns J J ns ns ns ns Vcc = 480 V, IC = 3 A, rge = 10 , VGE = 15 V Tj = 125 C J J COLLECTOR-EMITTER DIODE ("D" VERSION) Symbol Vf trr Qrr Irrm Param...
Description	(STGP3NB60F / STGD3NB60F / STGF3NB60FD / STGB3NB60FD) N-CHANNEL 3A - 600V - TO-220/TO-220FP/DPAK/D2PAK PowerMESH IGBT N-CHANNEL 3A - 600V - TO-220/TO-220FP/DPAK/D2PAK PowerMESH⑩ IGBT N-CHANNEL 3A - 600V TO-220/TO-220FP/DPAK/D2PAK POWERMESH IGBT N-CHANNEL 3A - 600V - TO-220/TO-220FP/DPAK/D2PAK PowerMESH?/a> IGBT
File Size	730.31K / 14 Page	View it Online	Download Datasheet

For rge Found Datasheets File :: 1933 Search Time::1.078ms
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