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Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
POWEREX[Powerex Power Semiconductors]
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| Part No. |
CT40TMH-8
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| OCR Text |
...
VCM
IGBT GATE VG VOLTAGE
RG VCE VG IGBT Xe TUBE CURRENT Ixe
RECOMMEND CONDITION VCM = 330V IP = 180A CM = 1200F VGE = 28V
MAXIMUM CONDITION 350V 200A 1500F
Notice 1. Gate drive voltage during on-period must be applied to sat... |
| Description |
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR STROBE FLASHER USE
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| File Size |
31.42K /
2 Page |
 View
it Online |
Download Datasheet
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Mitsubishi Electric Corporation
POWEREX[Powerex Power Semiconductors]
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| Part No. |
CT30VS-8
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| OCR Text |
...
VCM
IGBT GATE VG VOLTAGE
RG VCE VG IGBT Xe TUBE CURRENT Ixe
RECOMMEND CONDITION VCM = 330V IP = 160A CM = 800F VGE = 28V
MAXIMUM CONDITION 360V 180A 1000F
Notice 1. Gate drive voltage during on-period must be applied to sati... |
| Description |
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR STROBE FLASHER USE
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| File Size |
26.40K /
2 Page |
View
it Online |
Download Datasheet |
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|
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
CT30VS-8
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| OCR Text |
...
VCM
IGBT GATE VG VOLTAGE
RG VCE VG IGBT Xe TUBE CURRENT Ixe
RECOMMEND CONDITION VCM = 330V IP = 160A CM = 800F VGE = 28V
MAXIMUM CONDITION 360V 180A 1000F
Notice 1. Gate drive voltage during on-period must be applied to sati... |
| Description |
STROBE FLASHER USE
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| File Size |
23.66K /
2 Page |
View
it Online |
Download Datasheet |
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|
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Mitsubishi Electric Corporation
POWEREX[Powerex Power Semiconductors]
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| Part No. |
CT30VM-8
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| OCR Text |
...
VCM
IGBT GATE VG VOLTAGE
RG VCE VG IGBT Xe TUBE CURRENT Ixe
RECOMMEND CONDITION VCM = 330V IP = 160A CM = 800F VGE = 28V
MAXIMUM CONDITION 360V 180A 1000F
Notice 1. Gate drive voltage during on-period must be applied to sati... |
| Description |
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR STROBE FLASHER USE
|
| File Size |
26.31K /
2 Page |
View
it Online |
Download Datasheet |
| |
|
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| Part No. |
CT30VM-8
|
| OCR Text |
...
VCM
IGBT GATE VG VOLTAGE
RG VCE VG IGBT Xe TUBE CURRENT Ixe
RECOMMEND CONDITION VCM = 330V IP = 160A CM = 800F VGE = 28V
MAXIMUM CONDITION 360V 180A 1000F
Notice 1. Gate drive voltage during on-period must be applied to sati... |
| Description |
STROBE FLASHER USE
|
| File Size |
23.56K /
2 Page |
View
it Online |
Download Datasheet |
| |
|
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
Mitsubishi Electric Corporation
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| Part No. |
CT30TM-8
|
| OCR Text |
...
VCM
IGBT GATE VG VOLTAGE
RG VCE VG IGBT Xe TUBE CURRENT Ixe
RECOMMEND CONDITION VCM = 330V IP = 160A CM = 800F VGE = 28V
MAXIMUM CONDITION 360V 180A 1000F
Notice 1. Gate drive voltage during on-period must be applied to sati... |
| Description |
128 x 64 pixel format, LED Backlight available 130 A, 400 V, N-CHANNEL IGBT, TO-220F
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR STROBE FLASHER USE
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| File Size |
27.36K /
2 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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