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  rg-8 Datasheet PDF File

For rg-8 Found Datasheets File :: 36863    Search Time::2.953ms    
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    Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
POWEREX[Powerex Power Semiconductors]
Part No. CT40TMH-8
OCR Text ... VCM IGBT GATE VG VOLTAGE RG VCE VG IGBT Xe TUBE CURRENT Ixe RECOMMEND CONDITION VCM = 330V IP = 180A CM = 1200F VGE = 28V MAXIMUM CONDITION 350V 200A 1500F Notice 1. Gate drive voltage during on-period must be applied to sat...
Description MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR STROBE FLASHER USE

File Size 31.42K  /  2 Page

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    Mitsubishi Electric Corporation
POWEREX[Powerex Power Semiconductors]
Part No. CT30VS-8
OCR Text ... VCM IGBT GATE VG VOLTAGE RG VCE VG IGBT Xe TUBE CURRENT Ixe RECOMMEND CONDITION VCM = 330V IP = 160A CM = 800F VGE = 28V MAXIMUM CONDITION 360V 180A 1000F Notice 1. Gate drive voltage during on-period must be applied to sati...
Description MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR STROBE FLASHER USE

File Size 26.40K  /  2 Page

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    MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. CT30VS-8
OCR Text ... VCM IGBT GATE VG VOLTAGE RG VCE VG IGBT Xe TUBE CURRENT Ixe RECOMMEND CONDITION VCM = 330V IP = 160A CM = 800F VGE = 28V MAXIMUM CONDITION 360V 180A 1000F Notice 1. Gate drive voltage during on-period must be applied to sati...
Description STROBE FLASHER USE

File Size 23.66K  /  2 Page

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    Mitsubishi Electric Corporation
POWEREX[Powerex Power Semiconductors]
Part No. CT30VM-8
OCR Text ... VCM IGBT GATE VG VOLTAGE RG VCE VG IGBT Xe TUBE CURRENT Ixe RECOMMEND CONDITION VCM = 330V IP = 160A CM = 800F VGE = 28V MAXIMUM CONDITION 360V 180A 1000F Notice 1. Gate drive voltage during on-period must be applied to sati...
Description MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR STROBE FLASHER USE

File Size 26.31K  /  2 Page

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    MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. CT30VM-8
OCR Text ... VCM IGBT GATE VG VOLTAGE RG VCE VG IGBT Xe TUBE CURRENT Ixe RECOMMEND CONDITION VCM = 330V IP = 160A CM = 800F VGE = 28V MAXIMUM CONDITION 360V 180A 1000F Notice 1. Gate drive voltage during on-period must be applied to sati...
Description STROBE FLASHER USE

File Size 23.56K  /  2 Page

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    Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
Mitsubishi Electric Corporation
Part No. CT30TM-8
OCR Text ... VCM IGBT GATE VG VOLTAGE RG VCE VG IGBT Xe TUBE CURRENT Ixe RECOMMEND CONDITION VCM = 330V IP = 160A CM = 800F VGE = 28V MAXIMUM CONDITION 360V 180A 1000F Notice 1. Gate drive voltage during on-period must be applied to sati...
Description 128 x 64 pixel format, LED Backlight available 130 A, 400 V, N-CHANNEL IGBT, TO-220F
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR STROBE FLASHER USE

File Size 27.36K  /  2 Page

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    CT20VSL-8

Renesas Electronics Corporation
Part No. CT20VSL-8
OCR Text ... VCM IGBT GATE VG VOLTAGE RG VCE VG IGBT Xe TUBE CURRENT Ixe RECOMMEND CONDITION VCM = 330V IP = 120A CM = 300F VGE = 12V MAXIMUM CONDITION 350V 130A 400F Notice 1. Gate drive voltage during on-period must be applied to satis...
Description MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR

File Size 46.16K  /  3 Page

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    CT30VM-8

Renesas Electronics Corporation
Part No. CT30VM-8
OCR Text ... VCM IGBT GATE VG VOLTAGE RG VCE VG IGBT Xe TUBE CURRENT Ixe RECOMMEND CONDITION VCM = 330V IP = 160A CM = 800F VGE = 28V MAXIMUM CONDITION 360V 180A 1000F Notice 1. Gate drive voltage during on-period must be applied to sati...
Description MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR

File Size 46.66K  /  3 Page

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    CT20ASL-8

Renesas Electronics Corporation
Part No. CT20ASL-8
OCR Text ... VCM IGBT GATE VG VOLTAGE RG VCE VG IGBT Xe TUBE CURRENT Ixe RECOMMEND CONDITION VCM = 300V IP = 120A CM = 300F VGE = 12V MAXIMUM CONDITION 350V 130A 400F Notice 1. Gate drive voltage during on-period must be applied to satis...
Description MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR

File Size 45.75K  /  3 Page

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    CT20VM-8

Renesas Electronics Corporation
Part No. CT20VM-8
OCR Text ... VCM IGBT GATE VG VOLTAGE RG VCE VG IGBT Xe TUBE CURRENT Ixe RECOMMEND CONDITION VCM = 330V IP = 120A CM = 700F VGE = 28V MAXIMUM CONDITION 360V 130A 800F Notice 1. Gate drive voltage during on-period must be applied to satis...
Description MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR

File Size 46.79K  /  3 Page

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For rg-8 Found Datasheets File :: 36863    Search Time::2.953ms    
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