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reverse-current Datasheet PDF File

For reverse-current Found Datasheets File :: 166761 Search Time::2.281ms
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				Won-Top Electronics Co., Ltd. WTE[Won-Top Electronics]
Part No.	BAT54CW-T1 BAT54CW-T3 BAT54SW-T1 BAT54SW-T3 BAT54AW-T1 BAT54AW-T3 BAT54W-T1 BAT54W-T3 BAT54W
OCR Text	... Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Forward Continuous Current (Note 1) Repetitive Peak Forward Current (Note 1) Forward Surge Current (Note 1) Power Dissipation (Note 1) Typical ...
Description	SURFACE MOUNT SCHOTTKY BARRIER DIODE 表面贴装肖特基势垒二极管
File Size	36.12K / 3 Page	View it Online	Download Datasheet

				NXP Semiconductors / Philips Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BAT54CW BAT54SW BAT54AW BAT54W BAT54CWT/R BAT54WSERIES
OCR Text	...SM Ptot Tstg Tj Tamb continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current total power dissipation (per package) storage temperature junction temperature operating ambient ...
Description	Schottky barrier (double) diodes - Cd max.: 10@VR=1V pF; Configuration: dual c.c. ; IF max: 200 mA; IFSM max: 600 A; IR max: 2@VR=25VA; VFmax: 400@IF=10mA mV; VR max: 30 V Schottky barrier double diodes
File Size	29.07K / 5 Page	View it Online	Download Datasheet

				RECTRON[Rectron Semiconductor]
Part No.	BAT54C
OCR Text	...ons SOTSOT-23 SOT-23 Items Reverse Voltage Power Dissipation * Forward Voltage @ If = 100mA Forward Current Junction Temp. Storage Temp. Symbol VR PTOT VF IF TJ TSTG Ratings 30 300 1.0 200 -55 to 125 -55 to 150 Unit V mW V ...
Description	DUAL SURFACE MOUNT SCHOTTKY
File Size	16.35K / 1 Page	View it Online	Download Datasheet

				ZOWIE[Zowie Technology Corporation]
Part No.	BAT54RCLT1
OCR Text	...unless otherwise noted) Rating Reverse Voltage Forward Power Dissipation @ TA=25 C o Derate above 25 C Operating Junction Temperature Range...Current (IF) of 10mA. 2. Input pulse is adjusted so IR(peak) is equal to 10mA. 3. tp trr FIGURE ...
Description	SCHOTTKY BARRIER DIODE
File Size	46.97K / 2 Page	View it Online	Download Datasheet

				Advanced Power Electronics Corp.
Part No.	AP13N50W AP13N50W14
OCR Text	...ance v ds =30v - 180 - pf c rss reverse transfer capacitance f=1.0mhz - 6 - pf source-drain diode symbol parameter test conditions min. typ....current (a) t c =150 o c 10v 7.0v 5.0v 4.5v v g = 4.0v 0 10 20 30 0.0 4.0 8.0 12.0 16.0 20.0 24.0 v ...
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement
File Size	54.97K / 4 Page	View it Online	Download Datasheet

				SIEMENS AG SIEMENS[Siemens Semiconductor Group] Infineon
Part No.	BTS120 C67078-A5009-A2
OCR Text	... VGS = 0, VDS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0, VDS = 25 V, f = 1 MHz Values typ. max. Unit V(BR)DSS 100 - 3.0 - 3...current Pulsed source current Diode forward on-voltage I F = 38 A, VGS = 0 Reverse recovery time I F...
Description	From old datasheet system TEMPFET (N channel Enhancement mode Temperature sensor with thyristor characteristic) N-Channel TEMPFET
File Size	310.34K / 9 Page	View it Online	Download Datasheet

				Advanced Power Electronics Corp.
Part No.	AP13N50R-HF14
OCR Text	...ance v ds =30v - 180 - pf c rss reverse transfer capacitance f=1.0mhz - 6 - pf source-drain diode symbol parameter test conditions min. typ....current (a) t c =150 o c 10v 7.0v 5.0v 4.5v v g = 4.0v 0 10 20 30 0.0 4.0 8.0 12.0 16.0 20.0 24.0 v ...
Description	Simple Drive Requirement
File Size	54.52K / 4 Page	View it Online	Download Datasheet

				Advanced Power Electronics Corp.
Part No.	AP02N60H-H
OCR Text	...tance v ds =25v - 27 - pf c rss reverse transfer capacitance f=1.0mhz - 14 - pf source-drain diode symbol parameter test conditions min. typ...current (a) t c =25 o c 10v 6.0v 5.5v 5.0v v g = 4.5 v 0 0.3 0.6 0.9 0 5 10 15 20 v ds , drain-to-s...
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
File Size	241.04K / 6 Page	View it Online	Download Datasheet

				Advanced Power Electronics Corp.
Part No.	AP02N60H-H-HF14
OCR Text	...tance v ds =25v - 27 - pf c rss reverse transfer capacitance f=1.0mhz - 14 - pf source-drain diode symbol parameter test conditions min. typ...current (a) t c =25 o c 10v 6.0v 5.5v 5.0v v g = 4.5 v 0 0.3 0.6 0.9 0 5 10 15 20 v ds , drain-to-s...
Description	Fast Switching Characteristic
File Size	62.07K / 4 Page	View it Online	Download Datasheet

				SIEMENS AG SIEMENS[Siemens Semiconductor Group]
Part No.	C67070-A2701-A67 050B17N2 BSM50GB170DN2
OCR Text	...E = 25 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance Crss - VCE = 25 V, VGE = 0 V, f = 1 MHz Semiconductor Group 2 J...current IC = (TC) parameter: VGE 15 V , Tj 150 C 90 A Transient thermal impedance Zth JC = (tp...
Description	IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) IGBT功率模块（半桥包括快速续流二极管的绝缘金属基片包 From old datasheet system
File Size	111.79K / 9 Page	View it Online	Download Datasheet

For reverse-current Found Datasheets File :: 166761 Search Time::2.281ms
Page :: | 1 | 2 | 3 | 4 | 5 | <6> | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |

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