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    V437316S04V V437316S04VXTG-10PC V437316S04VXTG-75PC V437316S04VXTG-75

Mosel Vitelic, Corp.
MOSEL[Mosel Vitelic, Corp]
Mosel Vitelic Corp
Part No. V437316S04V V437316S04VXTG-10PC V437316S04VXTG-75PC V437316S04VXTG-75
OCR Text ...Sequential & Interleave) s Auto refresh (CBR) and Self refresh s All Inputs, Outputs are LVTTL Compatible s 4096 refresh Cycles every 64 ms ...4k COMPONENT PACKAGE, T = TSOP COMPONENT A=0.17u B=0.14u REV LEVEL LVTTL 4 BANKS Block Diagram...
Description 3.3 VOLT 16M x 72 HIGH PERFORMANCE UNBUFFERED ECC SDRAM MODULE 3.36x 72高性能无缓冲ECC内存模块

File Size 87.18K  /  12 Page

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    V437332S04V V437332S04VXTG-10PC V437332S04VXTG-75 V437332S04VXTG-75PC

Mosel Vitelic, Corp.
Mosel Vitelic Corp
MOSEL[Mosel Vitelic, Corp]
Part No. V437332S04V V437332S04VXTG-10PC V437332S04VXTG-75 V437332S04VXTG-75PC
OCR Text ...Sequential & Interleave) s Auto refresh (CBR) and Self refresh s All Inputs, Outputs are LVTTL Compatible s 4096 refresh Cycles every 64 ms ...4k COMPONENT PACKAGE, T = TSOP COMPONENT A=0.17u B=0.14u REV LEVEL LVTTL 4 BANKS Block Diagram...
Description 3.3 VOLT 32M x 72 HIGH PERFORMANCE UNBUFFERED ECC SDRAM MODULE 3.332M × 72配置高性能无缓冲ECC内存模块

File Size 86.55K  /  12 Page

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    V58C2128 V58C2128164S V58C2128404S V58C2128804S

MOSEL[Mosel Vitelic, Corp]
Part No. V58C2128 V58C2128164S V58C2128404S V58C2128804S
OCR Text ... Command Power Down Mode Auto refresh and Self refresh refresh Interval: 4096 cycles/64 ms Available in 66-pin 400 mil TSOP SSTL-2 Comp...4k refresh x8, x4, x16 4 Banks SSTL COMPONENT REV LEVEL Block Diagram 32M x 4 Column Addre...
Description HIGH PERFORMANCE 2.5 VOLT 128 Mbit DDR SDRAM

File Size 719.10K  /  59 Page

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    V58C365164S

Mosel Vitelic Corp
Mosel Vitelic, Corp
Part No. V58C365164S
OCR Text ... Mode and Power Down Mode Auto refresh and Self refresh refresh Interval: 4096 cycles/64 ms Available in 66-pin 400 mil TSOP-II SSTL-2 C...4k refresh 4 Banks SSTL COMPONENT REV LEVEL 66 Pin Plastic TSOP-II PIN CONFIGURATION Top View ...
Description 64 Mbit DDR SDRAM 4M X 16, 3.3VOLT

File Size 500.70K  /  44 Page

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    K4E641612C-TL45 K4E661612C-TL45 K4E641612C-60 K4E641612C-TC50 K4E641612C-45 K4E641612C-50 K4E641612C-L K4E641612C-T K4E6

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4E641612C-TL45 K4E661612C-TL45 K4E641612C-60 K4E641612C-TC50 K4E641612C-45 K4E641612C-50 K4E641612C-L K4E641612C-T K4E641612C-T45 K4E641612C-T50 K4E641612C-T60 K4E641612C-TC K4E641612C-TC45 K4E641612C-TC60 K4E641612C-TL50 K4E641612C-TL60 K4E661612C K4E661612C-45 K4E661612C-50 K4E661612C-60 K4E661612C-L K4E661612C-L45 K4E661612C-L50 K4E661612C-L60 K4E661612C-T K4E661612C-T45 K4E661612C-T50 K4E661612C-T60 K4E661612C-TC K4E661612C-TC45 K4E661612C-TC50 K4E661612C-TC60 K4E661612C-TL50 K4E661612C-TL60 K4E641612C
OCR Text ...mory cells within the same row. refresh cycle(4k Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh ...
Description 4M x 16bit CMOS Dynamic RAM with Extended Data Out

File Size 882.29K  /  36 Page

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    K4S641632F-TL55 K4S641632F-TL70 K4S641632F-TC70 K4S641632F-TC60 K4S641632F-TC75 K4S641632F-TL75 K4S641632F K4S641632F-TC

SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4S641632F-TL55 K4S641632F-TL70 K4S641632F-TC70 K4S641632F-TC60 K4S641632F-TC75 K4S641632F-TL75 K4S641632F K4S641632F-TC1H K4S641632F-TC1L K4S641632F-TC50 K4S641632F-TC55 K4S641632F-TL1H K4S641632F-TL1L K4S641632F-TL50 K4S641632F-TL60
OCR Text ...ion DQM for masking Auto & self refresh 64ms refresh period (4k cycle) CMOS SDRAM GENERAL DESCRIPTION The K4S641632F is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated wi...
Description RF CONNECTOR; FME PLUG, CRIMP ATTACHMENT FOR RG58
RF CONNECTOR; 75 OHM MCX JACK, SURFACE MOUNT
Low Noise Precision Advanced LinCMOS(TM) Single Operational Amplifier 8-CDIP -55 to 125
64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL

File Size 132.29K  /  11 Page

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    K4S641632H-TL70 K4S641632H-TC70 K4S641632H-TC75 K4S641632H-TC60 K4S640832H-TC75 K4S641632H-L60 K4S640432H-TC K4S640432H-

Samsung semiconductor
Samsung Electronic
Part No. K4S641632H-TL70 K4S641632H-TC70 K4S641632H-TC75 K4S641632H-TC60 K4S640832H-TC75 K4S641632H-L60 K4S640432H-TC K4S640432H-TC75 K4S640432H-L75 K4S640832H-L75 K4S641632H-L70 K4S641632H-L75 K4S640432H-TL75 K4S640832H-TL75 K4S641632H-TL60 K4S641632H-TL75
OCR Text ...(x16) for masking * Auto & self refresh * 64ms refresh period (4k cycle) GENERAL DESCRIPTION The K4S640432H / K4S640832H / K4S641632H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 4 bits, ...
Description 64Mb H-die SDRAM Specification

File Size 142.04K  /  14 Page

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    K4S643232E-TN70 K4S643232E-TE50 K4S643232E- K4S643232E-TE60 K4S643232E-TE70 K4S643232E-TN50 K4S643232E-TN60 K4S643232E

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4S643232E-TN70 K4S643232E-TE50 K4S643232E- K4S643232E-TE60 K4S643232E-TE70 K4S643232E-TN50 K4S643232E-TN60 K4S643232E
OCR Text ...ion DQM for masking Auto & self refresh 15.6us refresh duty cycle(4k/64ms) CMOS SDRAM GENERAL DESCRIPTION The K4S643232E is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated wi...
Description LED ORANGE DIFFUSED 2X5 RECT 200万32内存12k × 32 × 4银行同步DRAM LVTTL.3
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V) 200万32内存12k × 32 × 4银行同步DRAM LVTTL.3
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V) 200万32内存12k × 32 × 4银行同步DRAM LVTTL3.3
LED ORANGE DIFFUSED 2X5 RECT
CONNECTOR ACCESSORY
LED ORG/RED DIFFUSED 2X5MM RECT
-2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V)

File Size 99.80K  /  12 Page

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    K4S643232E-TP60 K4S643232E-TP70 K4S643232E-TI K4S643232E-TI60 K4S643232E-TI70

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4S643232E-TP60 K4S643232E-TP70 K4S643232E-TI K4S643232E-TI60 K4S643232E-TI70
OCR Text ...ion DQM for masking Auto & self refresh 15.6us refresh duty cycle(4k/64ms) CMOS SDRAM GENERAL DESCRIPTION The K4S643232E is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated wi...
Description 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 200万32内存12k × 32 × 4银行同步DRAM LVTTL
CONNECTOR ACCESSORY
IR LED 880NM 40 DEG SIDE VIEW

File Size 98.65K  /  12 Page

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    K4S643232F-TP60 K4S643232F-TP70 K4S643232F- K4S643232F-TI60 K4S643232F-TI70

Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. K4S643232F-TP60 K4S643232F-TP70 K4S643232F- K4S643232F-TI60 K4S643232F-TI70
OCR Text ...ion DQM for masking Auto & self refresh 15.6us refresh duty cycle(4k/64ms) Industrial Temperature range : -40c ~ 85c CMOS SDRAM GENERAL DESCRIPTION The K4S643232F is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4...
Description    2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL3.3V
-2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL3.3V
CONNECTOR ACCESSORY
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL3.3V 200万32内存12k × 32 × 4银行同步DRAM LVTTL3.3V

File Size 98.11K  /  12 Page

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