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Part No.	MT48V4M32LFF5-10XTG
OCR Text	... ? temperature-compensated self refresh (tcsr) ? fully synchronous; all signals registered on positive edge of system clock ? internal pipelined operatio n; column address can be changed every clock cycle ? internal banks for hiding row a...
Description	4M X 32 SYNCHRONOUS DRAM, 7 ns, PBGA90
File Size	2,701.10K / 79 Page	View it Online	Download Datasheet


Part No.	MT48LC8M16TG-8ITG MT48V8M16TG-8G
OCR Text	... ? temperature compensated self refresh (tcsr) ? fully synchronous; all signals registered on positive edge of system clock ? internal pipelined operat ion; column address can be changed every clock cycle ? internal banks for hiding row a...
Description	8M X 16 SYNCHRONOUS DRAM, 7 ns, PDSO54
File Size	6,168.33K / 69 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	HIP4083 HIP4083AB HIP4083AP
OCR Text	...dic basis by initiating a short refresh pulse. In most bridge applications, this will happen automatically every time the lower FETs turn-on and the upper FETs turn-off. However, it is still possible to use the HIP4083 in applications that ...
Description	80V/ 300mA Three Phase High Side Driver 80V, 300mA Three Phase High Side Driver 30000 SYSTEM GATE 3.3 VOLT LOGIC CELL AR - NOT RECOMMENDED for NEW DESIGN
File Size	69.83K / 10 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	HIP4086 HIP4086AB HIP4086AP
OCR Text	...pplies * Programmable Bootstrap refresh Time * Drives 1000pF Load with Typical Rise Time of 20ns and Fall Time of 10ns * DIS (Disable) Overrides Input Control * Input Logic Thresholds Compatible with 5V to 15V Logic Levels * Dead Time Disab...
Description	80V 0.5A Three Phase Driver 80V, 0.5A Three Phase Driver 80V/ 0.5A Three Phase Driver
File Size	74.89K / 9 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4E160411D K4E160412D K4E170411D K4E170412D K4E16704112D K4E160411D-B K4E160412D-B K4E160411D-F K4E160412D-F K4E170411D-B K4E170411D-F K4E170412D-F K4E170412D-B
OCR Text	...upply voltage (+5.0V or +3.3V), refresh cycle (2K Ref. or 4K Ref.), access time (-50 or -60), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CAS-before-R...
Description	4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. 4M x 4Bit CMOS Dynamic RAM with Extended Data Out Data Sheet 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle.
File Size	254.50K / 21 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4F160411D K4F160412D K4F170411D K4F170412D K4F160411D-B K4F160411D-F K4F160412D-B K4F160412D-F
OCR Text	...upply voltage (+5.0V or +3.3V), refresh cycle (2K Ref. or 4K Ref.), access time (-50 or -60), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CASbefore-RA...
Description	4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle. 4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
File Size	223.25K / 20 Page	View it Online	Download Datasheet

				Hitachi Semiconductor
Part No.	HM514400B HM514400BL HM514400C HM514400CL HM514400CLS-6 HM514400CLS-7 HM514400CLS-8 HM514400BLTT-6 HM514400BLTT-7 HM514400BLTT-8 HM514400CLTT-6 HM514400CLTT-7 HM514400CLTT-8
OCR Text	...ast page mode capability * 1024 refresh cycles : 16 ms 1024 refresh cycles : 128 ms (L-version) * 3 variations of refresh -- RAS-only refresh -- CAS-before-RAS refresh -- Hidden refresh HM514400B/BL, HM514400C/CL Series Ordering Informa...
Description	1,048,576-word x 4-bit dynamic random access memory, 80ns 1,048,576-word x 4-bit dynamic random access memory, 60ns 1/048/576-word X 4-bit Dynamic Random Access Memory 1,048,576-word x 4-bit dynamic random access memory, 70ns
File Size	231.12K / 27 Page	View it Online	Download Datasheet


Part No.	MT48LC16M32L2F5-10
OCR Text	...wer supply ? partial array self refresh power-saving mode ? temperature compensated self refresh (tcsr) ? deep power-down mode ? programmable output drive strength ? fully synchronous; all signals registered on positive edge of system cloc...
Description	16M X 32 SYNCHRONOUS DRAM, PBGA90
File Size	248.66K / 10 Page	View it Online	Download Datasheet


Part No.	MT16VR12816AG-745B1
OCR Text	...a access time ? power-down self refresh and active refresh ? 32ms, 16,384 cycle refresh ? 2.5v power supply with 1.8v cmos supply for i/os options marking ? package 184-pin rimm module (gold) g ? timing (cycle time) 356 mhz clock rate, acce...
Description	128M X 16 RAMBUS MODULE, 45 ns, DMA84
File Size	181.72K / 8 Page	View it Online	Download Datasheet

				Micron Technology, Inc.
Part No.	MT16LSDT464A
OCR Text	... page ? auto precharge and auto refresh modes ? self refresh mode ? 64ms, 4,096-cycle refresh ? lvttl-compatible inputs and outputs ? serial presence-detect (spd) options marking ? package 168-pin dimm (gold) g ? frequency/cas latency 100 m...
Description	4 Meg x 64 SDRAM DIMMs(4M x 64????ㄦ?RAM,????存?瀛???ㄦā??
File Size	261.57K / 19 Page	View it Online	Download Datasheet

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