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rds Datasheet PDF File

For rds Found Datasheets File :: 33712 Search Time::1.016ms
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				IRF[International Rectifier]
Part No.	IRF3000
OCR Text	rds(on) max 0.40W@VGS = 10V VDSS 300V ID 1.6A l Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Char...
Description	300V Single N-Channel HEXFET Power MOSFET in a SO-8 package SMPS MOSFET
File Size	119.33K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3007
OCR Text	...res VDSS = 75V G S rds(on) = 0.0126 ID = 75A Description Specifically designed for Automotive applications, this design of HEXFET(R) Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resis...
Description	75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package AUTOMOTIVE MOSFET
File Size	146.42K / 9 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3205L IRF3205S IRF3205
OCR Text	...lanche Rated D VDSS = 55V rds(on) = 8.0m G S ID = 110A Description Advanced HEXFET(R) Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. ...
Description	Power MOSFET(Vdss=55V, rds(on)=8.0mohm, Id=110A?) Power MOSFET(Vdss=55V, rds(on)=8.0mohm, Id=110A)
File Size	144.83K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3205 IRF3205PBF
OCR Text	...lanche Rated D VDSS = 55V rds(on) = 8.0m G S ID = 110A Description Advanced HEXFET(R) Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area....
Description	55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=55V, rds(on)=8.0mohm, Id=110A? Power MOSFET(Vdss=55V, rds(on)=8.0mohm, Id=110A) Power MOSFET(Vdss=55V, rds(on)=8.0mohm, Id=110A?) Power MOSFET(Vdss=55V/ rds(on)=8.0mohm/ Id=110A)
File Size	91.40K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3315S IRF3315L
OCR Text	...he Rated VDSS = 150V G S rds(on) = 0.082 ID = 21A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, com...
Description	Power MOSFET(Vdss=150V rds(on)=0.082ohm Id=21A) Power MOSFET(Vdss=150V, rds(on)=0.082ohm, Id=21A)
File Size	193.12K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF3315
OCR Text	...he Rated VDSS = 150V G S rds(on) = 0.07 ID = 27A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, comb...
Description	Power MOSFET(Vdss=150V, rds(on)=0.07ohm, Id=27A)
File Size	121.12K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3415L IRF3415S
OCR Text	...anche Rated D VDSS = 150V rds(on) = 0.042 G ID = 43A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This b...
Description	Power MOSFET(Vdss=150V/ rds(on)=0.042ohm/ Id=43A) Power MOSFET(Vdss=150V, rds(on)=0.042ohm, Id=43A) Power MOSFET(Vdss=150V rds(on)=0.042ohm Id=43A)
File Size	152.65K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3415
OCR Text	...ted D VDSS = 150V G S rds(on) = 0.042 ID = 43A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, com...
Description	Power MOSFET(Vdss=150V/ rds(on)=0.042ohm/ Id=43A) Power MOSFET(Vdss=150V, rds(on)=0.042ohm, Id=43A) Power MOSFET(Vdss=150V rds(on)=0.042ohm Id=43A)
File Size	90.69K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3515L IRF3515S
OCR Text	...r switching l VDSS 150V rds(on) max 0.045 ID 41A Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage...
Description	Power MOSFET(Vdss=150V/ rds(on)max=0.045ohm/ Id=41A) Power MOSFET(Vdss=150V, rds(on)max=0.045ohm, Id=41A)
File Size	122.87K / 10 Page	View it Online	Download Datasheet

				FreesCale
Part No.	MC4803A
OCR Text	...0 0.05 0.1 0.15 0.2 0 1 2 3 4 5 rds(on) - on - resistance( ) id - drain current (a) 3.5v 4.5v,6v,8v,10v 4v 0 1 2 3 4 5 0 0.2 0.4 0.6 id - drain current (a) vds - drain - to - source voltage (v) 10v,8v,6v,4.5v 3.5v ...
Description	P-Channel 30-V (D-S) MOSFET
File Size	344.72K / 5 Page	View it Online	Download Datasheet

For rds Found Datasheets File :: 33712 Search Time::1.016ms
Page :: | 1 | 2 | 3 | 4 | 5 | <6> | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |