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Eorex
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| Part No. |
EM4216MXXXX-XX EM412MXXXX-XX
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| OCR Text |
... When A10 is high,all banks are precharged, regardless of. When BA is low,only the bank selected by BA is precharged.
( Figure. 3 precharged command )
Write command ( /CS, /CAS, /WE = Low, /RAS = High )
CLK /CS /RAS /CAS /WE BA A10 C... |
| Description |
64Mb SDRAM
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| File Size |
964.91K /
33 Page |
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it Online |
Download Datasheet
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Integrated Silicon Solution Inc
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| Part No. |
IS42S16400B-6T IS42S16400B-6TL IS42S16400B-7T IS42S16400B-7TL
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| OCR Text |
...etermine if all banks are to be precharged (a10 high) or bank selected by ba0, ba1 (low). the address inputs also provide the op-code during a load mode register command. ba0, ba1 20, 21 input pin bank select address: ba0 and ba1 defines wh... |
| Description |
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
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| File Size |
470.86K /
55 Page |
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it Online |
Download Datasheet |
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ISSI
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| Part No. |
IS42S16400C
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| OCR Text |
...etermine if all banks are to be precharged (a10 high) or bank selected by ba0, ba1 (low). the address inputs also provide the op-code during a load mode register command. ba0, ba1 20, 21 input pin bank select address: ba0 and ba1 defines wh... |
| Description |
64M-Bit x 16-Bit 4 4-Bank SDRAM
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| File Size |
506.55K /
55 Page |
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it Online |
Download Datasheet |
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PROMOS TECHNOLOGIES INC
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| Part No. |
V59C1256804QALP19E V59C1256808QALP19E V59C1G01164QALF37E
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| OCR Text |
...a1, ba2 defines the bank to be precharged. if a10 is low, autoprecharge is disabled. during a precharge command cycle, a10(=ap) is us ed in conjunction with ba0, ba1and ba2 to control which bank(s) to precharge. if a10 is high, all eigh... |
| Description |
32M X 8 DDR DRAM, BGA68
64M X 16 DDR DRAM, BGA92
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| File Size |
1,035.33K /
79 Page |
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it Online |
Download Datasheet |
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