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200BG FR120 M48Z35AY MBR10 0HSTL50A TLYE25TP 12232 RY2405S
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For performances Found Datasheets File :: 3252    Search Time::0.891ms    
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    CHR3352-QEG20

United Monolithic Semiconductors
Part No. CHR3352-QEG20
OCR Text ...9 33 03 09 device thermal performances all the figures given in this section are obtained assuming that the qfn device is cooled down only by conduction through the package thermal pad (no convection mode considered). the tempe...
Description 12-16GHz Integrated Down Converter

File Size 568.44K  /  16 Page

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    MW4IC915NBR1 MW4IC915MBR1 MW4IC915GNBR1 MW4IC915GMBR1

MOTOROLA INC
Motorola, Inc.
MOTOROLA[Motorola, Inc]
Part No. MW4IC915NBR1 MW4IC915MBR1 MW4IC915GNBR1 MW4IC915GMBR1
OCR Text ... 750 to 1000 MHz. The linearity performances cover all modulations for cellular applications: GSM, GSM EDGE, TDMA, N-CDMA and W-CDMA. Final Application * Typical Performance: VDD = 26 Volts, IDQ1 = 60 mA, IDQ2 = 240 mA, Pout = 15 Watts CW, ...
Description RF LDMOS Wideband Integrated Power Amplifiers

File Size 330.77K  /  16 Page

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    MRFE6S9045NR1 CRCW12061001FKEA ATC100B470JT500XT 2743021447 2743019447 ATC100B120JT500XT ATC100B130JT500XT ATC100B150JT5

Freescale Semiconductor, Inc
Part No. MRFE6S9045NR1 CRCW12061001FKEA ATC100B470JT500XT 2743021447 2743019447 ATC100B120JT500XT ATC100B130JT500XT ATC100B150JT500XT ATC100B7R5JT500XT CRCW120656001FKEA CRCW120612R0FKEA EMVY500ADA221MJA0G 27291SL T491D106K035AT
OCR Text ...n Typ Max Unit Typical GSM EDGE performances (In Freescale GSM EDGE Test Fixture Optimized for 920 - 960 MHz, 50 ohm system) VDD = 28 Vdc, IDQ = 350 mA, Pout = 16 W Avg., f = 920 - 960 MHz, GSM EDGE Signal Power Gain Drain Efficiency Error ...
Description RF Power Field Effect Transistor

File Size 564.30K  /  15 Page

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    MRFE6S9060NR1

Freescale Semiconductor, Inc
Part No. MRFE6S9060NR1
OCR Text ...n Typ Max Unit Typical GSM EDGE performances (In Freescale GSM EDGE Test Fixture Optimized for 920 - 960 MHz, 50 ohm system) VDD = 28 Vdc, IDQ = 500 mA, Pout = 21 W Avg., f = 920 - 960 MHz, GSM EDGE Signal Power Gain Drain Efficiency Error ...
Description RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

File Size 570.83K  /  15 Page

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    MWIC930GNR1 MWIC930NR1

Freescale Semiconductor, Inc
Part No. MWIC930GNR1 MWIC930NR1
OCR Text ... 790 to 1000 MHz. The linearity performances cover all modulations for cellular applications: GSM, GSM EDGE, TDMA, N - CDMA and W - CDMA. Final Application * Typical Performance @ P1dB: VDD = 26 Volts, IDQ1 = 90 mA, IDQ2 = 240 mA, Pout = 30...
Description RF LDMOS Wideband Integrated Power Amplifiers

File Size 540.99K  /  20 Page

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    Vishay Sfernice
Part No. RSK33N100KB100K RSK33N50RG50RD0031 RSK33N12KF12KD RSK33N20KF20KD RSK33N180RG180RD31 RSK33N93RD93RD0016 N760KFB0016 RSK33N27KD113KD016 RSK33N90KF90KD
OCR Text ...ation with improved parametric performances in both industrial and m ilitary environments. their close ratio tolerance and tcr tracking performances are particularly relevant to a mplifier gain-setting and diverse attenuator and terminator...
Description RSK 33N Wirebondable Dual Value Thin Film Chip Resistor Networks, Center Tap

File Size 79.26K  /  3 Page

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    TDA7350A05

http://
STMicroelectronics
Part No. TDA7350A05
OCR Text ...nal count, excellent electrical performances, flexibility in use, superior reliability thanks to a built-in array of protections. As a result the following performances has been achieved: Figure 25. Power Dissipation & Efficien...
Description 22W BRIDGE-STEREO AMPLIFIER FOR CAR RADIO

File Size 456.06K  /  23 Page

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    TEMEX COMPONENTS
Part No. VHF3700 VHG1030
OCR Text ....5 ghz ?exceptional phase noise performances ?proven design ?construction according mil std 883 ?custom design capability description the vh series is fundamental pin varactor tuned oscillators. the negative resistance is made with a sili...
Description VCO, 3700 MHz - 4200 MHz
VCO, 1030 MHz - 1090 MHz

File Size 128.18K  /  3 Page

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    CHR2244

United Monolithic Semiconductors
Part No. CHR2244
OCR Text ...le bias voltage Low cost & high performances plastic package Lead-free, Matt Tin (Green) solder plating n n n n n n Main Characteristics Tamb = +25C; Vcc = 3.1V Symbol Vcc_sb_i RF_sb_p RF_dl_p BW_dl G_ul BW_ul Parameter Standby DC ...
Description 5.8 GHz One Antenna Reflective Transponder for Tag GaAs Monolithic Microwave IC

File Size 4,931.88K  /  16 Page

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