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Austin Semiconductor, Inc
AUSTIN SEMICONDUCTOR INC
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| Part No. |
MT4C4001JECJ-7/IT MT4C4001JECJ-7/XT MT4C4001JECG-8/IT MT4C4001JCZ-12/883C MT4C4001JECN-12/883C MT4C4001JECG-12/883C MT4C4001JCN-12/883C MT4C4001JECJ-12/883C MT4C4001JC-12/883C MT4C4001JECJ-12/IT MT4C4001JECJ-12/XT MT4C4001JC-12/XT MT4C4001JCZ-12/XT MT4C4001JECG-12/XT MT4C4001JCN-12/XT MT4C4001JCN-10/883C MT4C4001JC-10/883C MT4C4001JECG-10/883C MT4C4001JECN-10/883C MT4C4001JECJ-10/883C MT4C4001JCZ-10/883C MT4C4001JC-7/XT MT4C4001JC-10/XT MT4C4001JECN-10/XT MT4C4001JECN-12/IT MT4C4001JCN-12/IT MT4C4001JCN-10/IT MT4C4001JECN-10/IT MT4C4001JECN-12/XT MT4C4001JCN-10/XT MT4C4001JCZ-10/XT MT4C4001JECJ-10/XT MT4C4001JECG-10/XT MT4C4001JCZ-7/XT MT4C4001JECG-7/XT MT4C4001JECN-7/XT MT4C4001JCZ-10/IT MT4C4001JC-10/IT MT4C4001JC-12/IT MT4C4001JECN-8/XT MT4C4001JECJ-7/883C MT4C4001JCN-7/883C MT4C4001JECN-7/883C MT4C4001JECG-12/IT MT4C4001JECN-7/IT
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| OCR Text |
...controlled by WE\ and OE\. FAST-pagemode operations allow faster data operations (READ, WRITE, or READ-MODIFY-WRITE) within a row address (A0-A9) defined page boundary. The FAST PAGE MODE (continued)
Austin Semiconductor, Inc. reserves the... |
| Description |
1 MEG x 4 DRAM Fast Page Mode DRAM 1M X 4 FAST PAGE DRAM, 120 ns, CDSO20
1 MEG x 4 DRAM Fast Page Mode DRAM 1M X 4 FAST PAGE DRAM, 70 ns, CDSO20
1 MEG x 4 DRAM Fast Page Mode DRAM 1M X 4 FAST PAGE DRAM, 70 ns, CDIP20
1 MEG x 4 DRAM Fast Page Mode DRAM 1M X 4 FAST PAGE DRAM, 120 ns, CZIP20
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| File Size |
245.89K /
20 Page |
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Micron Technology, Inc.
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| Part No. |
MT2LDT432HG-6X MT2LDT432HG-5X MT4LDT832HG-5XS MT2LDT432HG-5XS MT2LDT432HG-6XS
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| OCR Text |
...g RAS# HIGH terminates the FAST-pagemode operation.
EDO PAGE MODE
EDO PAGE MODE, designated by the "X" version, is an accelerated FAST-PAGE-MODE cycle. The primary advantage of EDO is the availability of data-out even after CAS# goes ba... |
| Description |
SMALL-OUTLINE DRAM MODULE 小外形DRAM模块
Silver Mica Capacitor; Capacitance:1200pF; Capacitance Tolerance: 5%; Series:CDV30; Voltage Rating:1500VDC; Capacitor Dielectric Material:Mica; Termination:Radial Leaded; Lead Pitch:11.1mm; Leaded Process Compatible:No RoHS Compliant: No 小外形DRAM模块
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| File Size |
394.22K /
25 Page |
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it Online |
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Electronic Theatre Controls, Inc.
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| Part No. |
MX29F1611
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| OCR Text |
...cess time: 100/120/150ns ? fast pagemode access time: 50/60/70ns ? page access depth: 16 bytes/8 words, page address a0, a1, a2 ? sector erase architecture - 16 equal sectors of 128k bytes each - sector erase time: 150ms typical ?... |
| Description |
16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE pagemode FLASH EEPROM
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| File Size |
161.40K /
36 Page |
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it Online |
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Macronix International Co., Ltd.
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| Part No. |
MX29L3211MC-10
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| OCR Text |
pagemode access time: 50ns ? page access depth: 16 bytes/8 words ? sector erase architecture - 32 equal sectors of 64k word each - sector erase time: 200ms typical ? auto erase and auto program algorithms - automatically erases any one ... |
| Description |
32M-BIT [4M x 8/2M x 16] CMOS SINGLE VOLTAGE pagemode FLASH EEPROM
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| File Size |
665.11K /
38 Page |
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it Online |
Download Datasheet |
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