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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MRF6S27015GNR1 MRF6S27015NR1
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| OCR Text |
...9 30 31 32 P1dB = 43 dBm (20 W) p3db = 43.7 dBm (23 W) P6dB = 44.3 dBm (27 W)
Figure 8. Intermodulation Distortion Products versus Tone Spacing
Ideal
Actual VDD = 28 Vdc, IDQ = 160 mA Pulsed CW, 12 sec(on), 1% Duty Cycle f = 2600 M... |
| Description |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
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| File Size |
593.99K /
16 Page |
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MOTOROLA
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| Part No. |
MRF6P23190HR6
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| OCR Text |
...ual P6dB = 55.73 dBm (374.11 W) p3db = 55.1 dBm (325.54 W) Ideal
7th Order
1
10
100
TWO-TONE SPACING (MHz)
Pin, INPUT POWER (dBm)
Figure 7. Intermodulation Distortion Products versus Tone Spacing
D, DRAIN EFFICIENCY (%... |
| Description |
2400 MHz, 40 W Avg., 28 V, 2 x W鈥揅DMA Lateral N鈥揅hannel RF Power MOSFET
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| File Size |
471.86K /
12 Page |
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飞思卡尔半导体(中国)有限公司
FREESCALE[Freescale Semiconductor, Inc]
Freescale (Motorola)
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| Part No. |
MRF6S23100HXX MRF6S23100H MRF6S23100HR3 MRF6S23100HSR3
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| OCR Text |
... OUTPUT POWER (dBm)
57 Ideal p3db = 51.88 dBm (154.14 W) 53 P1dB = 51.18 dBm (131.19 W) Actual
55
51
49
VDD = 28 Vdc, IDQ = 1000 mA Pulsed CW, 8 sec(on), 1 msec(off) f = 2350 MHz 32 33 34 35 36 37 38 39 40
47 1 10 100 TWO-... |
| Description |
RF Power Dield Effect Transistors
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| File Size |
411.40K /
12 Page |
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EUDYNA[Eudyna Devices Inc]
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| Part No. |
ESN35A090IV EGN35A090IV
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| OCR Text |
p3db High Efficiency: 50%(typ.) @ p3db Linear Gain : 12.0dB(typ.) @ f=3.5GHz Proven Reliability
ES/EGN35A090IV
High Voltage - High Power GaN-HEMT
DESCRIPTION
Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater cons... |
| Description |
High Voltage - High Power GaN-HEMT
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| File Size |
104.70K /
4 Page |
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FREESCALE[Freescale Semiconductor, Inc]
MOTOROLA
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| Part No. |
MRF5S19150H MRF5S19130HR306 MRF5S19130HSR3 MRF5S19130HR3
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| OCR Text |
...4 53 52 51 50 49 48 35 36 37 38 p3db = 53.11 dBm (205.57 W) P1dB = 52.54 dBm (179.61 W) Actual VDD = 28 Vdc, IDQ = 1200 mA Pulsed CW, 8 sec (on), 1 msec (off) f = 1960 MHz 39 40 41 42 43 44 45 Ideal
Pin, INPUT POWER (dBm)
Figure 6. In... |
| Description |
RF Power Field Effect Transistors
MRF5S19130HSR3 1930-1990 MHz, 26 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs
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| File Size |
426.09K /
12 Page |
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MOTOROLA
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| Part No. |
MRF5S21150SR3
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| OCR Text |
... 51 50 49 100 48 35 36 37 38 39 p3db = 53.58 dBm (228 W) P1dB = 52.95 dBm (197 W)
IRL, INPUT RETURN LOSS (dB)
Ideal
5th Order
Actual
VDD = 28 Vdc, Pout = 150 W (PEP), IDQ = 1300 mA Two-Tone Measurements, Center Frequency = 21... |
| Description |
MRF5S21150, MRF5S21150R3, MRF5S21150S, MRF5S21150SR3 2170 Mhz, 33 W Avg., 2 X W-CDMA, 28 V Lateral N-channel RF Power MOSFETs
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| File Size |
396.90K /
12 Page |
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