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  p-mosfets Datasheet PDF File

For p-mosfets Found Datasheets File :: 15409    Search Time::2.516ms    
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    EB201 EB201D

ONSEMI[ON Semiconductor]
Part No. EB201 EB201D
OCR Text ...CKAGE) R (METAL) R (CONTACT) P+ P- R (ACCUM) R (JFET) R (CH) R(N+) P+ Nepi R (SPREAD) R (BULK) N + SUBSTRATE R (SUBS...MOSFETs. Figure 3 compares the major on-resistance components of HDTMOS to those of standard cell MO...
Description High Cell Density MOSFETs Low On-Resistance Affords New Design Options

File Size 118.47K  /  8 Page

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    IRF840LCL IRF840LCS

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF840LCL IRF840LCS
OCR Text PD- 93766 IRF840LCS IRF840LCL HEXFET(R) Power MOSFET l l l l l l Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V...MOSFETs achieve significant lower gate charge over conventional MOSFETs. Utilizing the new LCDMOS (l...
Description Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A) 功率MOSFET(减振钢板基本\u003d 500V及的Rds(on)\u003d 0.85ohm,身份证\u003d 8.0A
Power MOSFET(Vdss=500V Rds(on)=0.85ohm Id=8.0A)

File Size 169.91K  /  10 Page

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    Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
Part No. FDS3601 FDS3601NL
OCR Text ...) 1 1ms 10ms 100ms 1s 10s DC 50 P(pk), PEAK TRANSIENT POWER (W) Figure 8. Capacitance Characteristics. 100s 40 SINGLE PULSE RJA =135C/W TA = 25C 30 0.1 VGS = 10V SINGLE PULSE RJA = 135oC/W TA = 25oC 0.001 0.1 1 20 0....
Description 100V Dual N-Channel PowerTrench MOSFET 1.3 A, 100 V, 0.53 ohm, N-CHANNEL, Si, POWER, MOSFET
100V Dual N-Channel PowerTrench MOSFET

File Size 83.40K  /  5 Page

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    IRHY597130CM IRHY597130CM-15

International Rectifier
Part No. IRHY597130CM IRHY597130CM-15
OCR Text ... dm pulsed drain current -50 p d @ t c = 25c max. power dissipation 75 w linear derating factor 0.6 w/c v gs gate-to-source voltage 20 ...mosfets for space applications. these devices have been characterized for single event effects (se...
Description Simple Drive Requirements

File Size 170.82K  /  8 Page

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    STB10N60M2 STU10N60M2 STP10N60M2 STD10N60M2

STMicroelectronics
Part No. STB10N60M2 STU10N60M2 STP10N60M2 STD10N60M2
OCR Text ...(1) drain current (pulsed) 30 a p tot total dissipation at t c = 25 c 85 w dv/dt (1) 1. i sd 7.5 a, di/dt 400 a/ s; v ds peak < v (br)dss , v dd =400 v peak diode recovery voltage slope 15 v/ns dv/dt (2) 2. v ds 480 v mo...
Description N-channel 600 V, 0.550 typ., 7.5 A MDmesh II Plus low Qg Power MOSFETs in D2PAK

File Size 1,597.83K  /  24 Page

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    PIP201-12M-3

Philips Semiconductors
Part No. PIP201-12M-3
OCR Text PIP201-12M-3 DC-to-DC converter powertrain M3D797 Rev. 03 -- 19 November 2003 Product data 1. Description The PIP201-12M is desi...MOSFETs and the driver circuit into a single component, stray inductances are virtually eliminated, ...
Description DC-to-DC converter powertrain

File Size 144.80K  /  20 Page

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    Central Semiconductor C...
Part No. CMLDM5757
OCR Text ...) and complementary cmldm5757 (p-channel) are dual 20v, 540ma (n-channel) and 20v, 430ma (p-channel) mosfets in the miniature, sot-563 surface mount package. cmldm3737 and cmldm5757 are ideal solutions for design engineers seeking ener...
Description Dual, Complementary MOSFETs

File Size 1,067.00K  /  2 Page

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    IRF[International Rectifier]
Part No. IRF530NS IRF530L IRF530NL IRF530NSTRL IRF530NSTRR IRF530NLPBF
OCR Text PD - 91352B HEXFET Power MOSFET l l l l l l IRF530NS IRF530NL (R) VDSS = 100V RDS(on) = 90m Advanced Process Technology Ultra Low...MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low...
Description 100V Single N-Channel HEXFET Power MOSFET in a TO-262 package
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

File Size 602.97K  /  10 Page

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