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R5F2120 854916 F2907Z M505011F 62042 S6B1400X K8A56EBC 20112
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  one-bank Datasheet PDF File

For one-bank Found Datasheets File :: 9743    Search Time::1.812ms    
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    EM78P458 EM78P459 EM78P458AM EM78P459AM EM78P459AK EM78P458AP

ELAN Microelectronics Corp
EMC
Part No. EM78P458 EM78P459 EM78P458AM EM78P459AM EM78P459AK EM78P458AP
OCR Text ...ere is a 4096*13-bit Electrical One Time Programmable Read Only Memory (OTP-ROM) within it. Because of the OTP-ROM, the EM78P458 and EM78P45...bank 0 or bank 1. Bit 7 is a general-purpose read/write bit. See the configuration of the data memor...
Description 8-bit microprocessors with low-power and high-speed CMOS technology

File Size 258.12K  /  44 Page

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    HYNIX SEMICONDUCTOR INC
Part No. HY5DU28822LT-K
OCR Text ...tivated, the ddr sdram will be one of the states among power down, suspend or self refresh. cs chip select enables or disables all inputs except clk/ clk , cke, dqs and dm. ba0, ba1 bank select address selects bank to be activated during e...
Description 16M X 8 DDR DRAM, PDSO66

File Size 84.91K  /  10 Page

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    HMT325V7EFR8A-PB HMT325V7EFR8A-RD HMT325V7EFR8A-H9 HMT351V7EFR4A HMT351V7EFR4A-RD HMT351V7EFR4A-H9 HMT351V7EFR4A-PB HMT3

Hynix Semiconductor
Part No. HMT325V7EFR8A-PB HMT325V7EFR8A-RD HMT325V7EFR8A-H9 HMT351V7EFR4A HMT351V7EFR4A-RD HMT351V7EFR4A-H9 HMT351V7EFR4A-PB HMT351V7EFR8A-H9 HMT351V7EFR8A-RD HMT351V7EFR8A-PB
OCR Text ...r read/write commands to select one location out of the mem- ory array in the respective bank. a10 is sampled during a precharge command to deter- mine whether the precharge applies to one bank (a10 low) or all banks (a10 high). if only on...
Description DDR3L SDRAM VLP Registered DIMM Based on 2Gb E-die

File Size 874.92K  /  59 Page

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    NANYA TECHNOLOGY CORP
Part No. NT5DS16M16BW-6K
OCR Text ...ists of a single 2n -bit wide, one clock cycle data transfer at the internal dram core and two corresponding n-bit wide, one-half-clock-c...bank and row to be accessed. the address bits registered coincident with the read or write command...
Description 16M X 16 DDR DRAM, 0.7 ns, PBGA60

File Size 1,341.90K  /  80 Page

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    HYM71V16635BLT8

Hynix Semiconductor
Part No. HYM71V16635BLT8
OCR Text ...n 400mil 54pin tsop-ii package, one 2kbit eeprom in 8pin tssop package on a 168pin glass-epoxy printed circuit board. one 0.22uf and one 0....bank : one physical bank ? auto refresh and self refresh ? 4096 refresh cycles / 64ms ? programmabl...
Description PC133 SDRAM Unbuffered DIMM

File Size 376.45K  /  14 Page

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    HYM71V16635BLT6

Hynix Semiconductor
Part No. HYM71V16635BLT6
OCR Text ...n 400mil 54pin tsop-ii package, one 2kbit eeprom in 8pin tssop package on a 168pin glass-epoxy printed circuit board. two 0.33uf and one 0....bank : two physical bank ? auto refresh and self refresh ? 4096 refresh cycles / 64ms ? programmabl...
Description PC133 SDRAM Unbuffered DIMM

File Size 445.27K  /  14 Page

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    MT4JTF12864AZ-1G4

Micron Technology
Part No. MT4JTF12864AZ-1G4
OCR Text ...ite commands, to select one location out of the mem- ory array in the respective bank. a10 is sampled during a precharge command to determine whether the precharge applies to one bank (a10 low, bank selected by ba[2:0]) or...
Description DDR3 SDRAM UDIMM

File Size 288.81K  /  14 Page

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    KMM466S823DT3

Samsung Semiconductor
Part No. KMM466S823DT3
OCR Text ... 15ns input signals are changed one time during 30ns cke 3 v ih (min), cs 3 v ih (min), t cc = 10ns input signals are changed one time...bank dq0 ~ dq63 data input/output clk0 ~ clk1 clock input cke0 clock enable input cs0 chip select in...
Description PC66 SODIMM

File Size 134.29K  /  10 Page

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    K4S280432I

Samsung Semiconductor
Part No. K4S280432I
OCR Text ... cke should be enabled at least one cycle prior to new command. disable input buffers for power down in standby. a 0 ~ a 11 address row/col...bank select address selects bank to be activated during row address latch time. selects bank for rea...
Description (K4S28xx32I) JEDEC standard 3.3V power supply LVTTL compatible

File Size 253.25K  /  14 Page

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    HMT41GR7AFR8C

Hynix Semiconductor
Part No. HMT41GR7AFR8C
OCR Text ...r read/write commands to select one location out of the mem- ory array in the respective bank. a10 is sampled during a precharge command to deter- mine whether the precharge applies to one bank (a10 low) or all banks (a10 high). if only on...
Description DDR3 SDRAM

File Size 1,316.94K  /  71 Page

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