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Sumitomo Electric Industries, Ltd.
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Part No. |
FLL21E135IX
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OCR Text |
...rder intermodulation distortion im 3 --33-30 dbc power gain g p 14.5 15.5 - db drain efficiency d -26- % adjacent channel leakage power ratio aclr - -35 - dbc themal resistance r th channel to case - 0.8 1.0 o c/w note 1 : im 3 , aclr and ... |
Description |
L,S-band High Power GaAs FET 升,S波段高功率GaAs场效应管
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File Size |
287.42K /
7 Page |
View
it Online |
Download Datasheet
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Sumitomo Electric Industries, Ltd.
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Part No. |
FLL21E090IY
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OCR Text |
...rder intermodulation distortion im 3 --33-30 dbc power gain g p 14.5 15.5 - db drain efficiency d -26- % adjacent channel leakage power ratio aclr - -35 - dbc themal resistance r th channel to case - 1.1 1.3 o c/w note 1 : im 3 , aclr and ... |
Description |
L,S-band High Power GaAs FET 升,S波段高功率GaAs场效应管
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File Size |
286.41K /
7 Page |
View
it Online |
Download Datasheet
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EUDYNA[Eudyna Devices Inc]
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Part No. |
EGN21A045I EGN21A045IV
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OCR Text |
...P
Symbol
VDS IGF IGR Tch
im l e
Condition
RG=10 RG=10
120 Tc=25oC -5 112 -65 to +175 250
a in
Rating Limit
50 <9.7 >-3.6 200
y r
Unit
V V W oC oC
Unit
V mA mA oC
Limit Typ. Max.
-2.0 -350 -32 16.0 35 1.8 -3.5... |
Description |
High Voltage - High Power GaN-HEMT
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File Size |
226.74K /
4 Page |
View
it Online |
Download Datasheet
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EUDYNA[Eudyna Devices Inc]
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Part No. |
EGN045MK
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OCR Text |
...t Channel Temperature
r P
im l e
Condition
RG=10 RG=10 Vp VGDO P3dB d GL Rth
a in
Rating Limit
50 <9.7 >-3.6 200
120 -5 75.0 -65 to +175 250
y r
Unit
V V W oC oC
Unit
V mA mA oC
ELECTRICAL CHARACTERISTICS (Case... |
Description |
High Voltage - High Power GaN-HEMT
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File Size |
205.87K /
3 Page |
View
it Online |
Download Datasheet
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Price and Availability
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