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					Freescale Semiconductor, Inc
Part No.	MRFG35005ANT1
OCR Text	..., ID = 105 mA) Symbol IDSS IGSS idso IDSX VGS(th) VGS(Q) Min -- -- -- -- - 1.2 - 1.1 Typ 1.7 <1 1 <1 - 0.95 - 0.85 Max -- 100 600 9 - 0.7 - 0.6 Unit Adc Adc Adc mAdc Vdc Vdc Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD...
Description	Gallium Arsenide PHEMT RF Power Field Effect Transistor
File Size	444.40K / 13 Page	View it Online	Download Datasheet

					Freescale Semiconductor, Inc
Part No.	MRFG35003M6T1 MRFG35003M6T106
OCR Text	...CH, 3.84 MCPS) Symbol IDSS IGSS idso IDSX VGS(th) VGS(Q) Gps P1dB hD Min -- -- -- -- - 1.2 - 1.1 8 -- 22 Typ 2.9 < 1.0 0.02 1.0 - 1.0 - 0.9 9 3 24 Max -- 100 1.0 15 - 0.7 - 0.7 -- -- -- Unit Adc Adc mAdc mAdc Vdc Vdc dB W % ARCHIVE INFOR...
Description	Gallium Arsenide PHEMT RF Power Field Effect Transistor
File Size	129.42K / 12 Page	View it Online	Download Datasheet

					Freescale Semiconductor, Inc
Part No.	MRFG35003N6AT1
OCR Text	..., ID = 180 mA) Symbol IDSS IGSS idso IDSX VGS(th) VGS(Q) Min -- -- -- -- - 1.2 - 1.1 Typ 2.9 <1 50 <1 - 0.95 - 0.82 Max -- 100 1000 15 - 0.7 - 0.6 Unit Adc Adc Adc mAdc Vdc Vdc Functional Tests (In Freescale Test Fixture, 50 ohm system) ...
Description	Gallium Arsenide PHEMT RF Power Field Effect Transistor
File Size	213.06K / 11 Page	View it Online	Download Datasheet

					Freescale Semiconductor, Inc Freescale Semiconductor...
Part No.	MRFG35005MT106 08051J0R1BBT 100A101JP500X 100B101JP500X 100B102JP500X 100A100JP500X 08051J3R9BBT 08051J0R3BBT 08051J0R4BBT 08051J0R9BBT 08051J1R0BBT 08051J1R2BBT 100A7R5JP150X
OCR Text	...CH, 3.84 MCPS) Symbol IDSS IGSS idso IDSX VGS(th) VGS(Q) Gps P1dB hD Min -- -- -- -- - 1.2 - 1.1 10 -- 22 Typ 1.7 < 1.0 -- < 1.0 - 0.9 - 0.8 11 4.5 25 Max -- 100 600 9 - 0.7 - 0.6 -- -- -- Unit Adc Adc Adc mAdc Vdc Vdc dB W % ARCHIVE INF...
Description	Gallium Arsenide PHEMT RF Power Field Effect Transistor
File Size	124.36K / 12 Page	View it Online	Download Datasheet

					Freescale Semiconductor, Inc
Part No.	MRFG35010MT1
OCR Text	... IDQ = 180 mA) Symbol IDSS IGSS idso IDSX VGS(th) VGS(Q) Gps P1dB hD Min -- -- -- -- - 1.2 - 1.2 9.0 -- 23 Typ 2.9 < 1.0 0.1 2.0 - 1.0 - 0.95 10 9 28 Max -- 100 1.0 15 - 0.7 - 0.7 -- -- -- Unit Adc Adc mAdc mAdc Vdc Vdc dB W % ARCHIVE IN...
Description	Gallium Arsenide PHEMT RF Power Field Effect Transistor
File Size	183.58K / 12 Page	View it Online	Download Datasheet

					Freescale Semiconductor, Inc
Part No.	MRFG35010NT1
OCR Text	... IDQ = 180 mA) Symbol IDSS IGSS idso IDSX VGS(th) VGS(Q) Gps P1dB hD Min -- -- -- -- - 1.2 - 1.2 9.0 -- 23 Typ 2.9 < 1.0 0.1 2.0 - 1.0 - 0.95 10 9 28 Max -- 100 1.0 15 - 0.7 - 0.7 -- -- -- Unit Adc Adc mAdc mAdc Vdc Vdc dB W % ARCHIVE IN...
Description	Gallium Arsenide PHEMT RF Power Field Effect Transistor
File Size	163.84K / 10 Page	View it Online	Download Datasheet

					Freescale Semiconductor, Inc
Part No.	MRFG35010R1
OCR Text	..., ID = 180 mA) Symbol IDSS IGSS idso IDSX VGS(th) VGS(Q) Gps P1dB hD Min -- -- -- -- - 1.2 -1 9 -- 23 Typ 2.9 <1 0.09 5 - 0.8 - 0.8 10 10 30 Max -- 100 1 15 - 0.7 - 0.5 -- -- -- Unit Adc Adc mAdc mAdc Vdc Vdc dB W % ARCHIVE INFORMATION ...
Description	Gallium Arsenide PHEMT RF Power Field Effect Transistor
File Size	365.25K / 11 Page	View it Online	Download Datasheet

					http:// PANASONIC[Panasonic Semiconductor]
Part No.	2SK0065 2SK65
OCR Text	...ge temperature Symbol VDSO VGDO idso IDGO IGSO PD Topr Tstg Ratings 12 -12 2 2 2 20 -10 to +70 -20 to +150 Unit V V mA mA mA mW C C 1 2 3 0.45+0.20 -0.10 (2.5) (2.5) 0.45+0.20 -0.10 0.70.1 15.60.5 (0.8) 0.75 max. 7.6 1: Drai...
Description	For Impedance Conversion In Low Frequency
File Size	69.37K / 3 Page	View it Online	Download Datasheet

					Panasonic Semiconductor
Part No.	DSKTJ05
OCR Text	...drain-source current(gate open) idso 2 dsktj05 silicon n-channel junction fet for af impedance converter marking symbol : 9s, 9t unit drain-source voltage(gate open) vdso 20 v parameter symbol rating tentative dsktj05 total pages page semi...
Description	Silicon N-channel junction FET For AF impedance converter
File Size	435.16K / 3 Page	View it Online	Download Datasheet

					Panasonic Semiconductor
Part No.	DSKTJ08
OCR Text	...drain-source current(gate open) idso 2 typ max pd 100 mw electrical characteristics ta = 25 c3 c parameter symbol power dissipation operating ambient temperature unit drain current * 1 ,* 4 id vdd = 2.0 v, rd = 2.2 k a conditions min...
Description	Silicon N-channel junction FET For AF impedance converter
File Size	429.94K / 3 Page	View it Online	Download Datasheet

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