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  HY27UG164G2M-TPCP Datasheet PDF File

For HY27UG164G2M-TPCP Found Datasheets File :: 76+       Page :: | 1 | 2 | 3 | 4 | 5 | <6> | 7 | 8 |   

    TPCP8002

Toshiba Semiconductor
Part No. TPCP8002
Description TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS IV)

File Size 222.75K  /  7 Page

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Toshiba Electronic Devices & Storage Corporation

Part No. TPCP8515
Description NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8
Tech specs    

Official Product Page

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    TPCP8001-H

Toshiba Semiconductor
Part No. TPCP8001-H
Description TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII)

File Size 244.33K  /  7 Page

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Toshiba Electronic Devices & Storage Corporation

Part No. TPCP8513
Description NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PS-8
Tech specs    

Official Product Page

    Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
Part No. TPCP8J01
Description TOSHIBA Multi-chip Device Silicon P Channel MOS Type (U-MOSIV) Silicon NPN Epitaxial Type
TOSHIBA Multi-chip Device Silicon P Channel MOS Type (U-MOSIV) /Silicon NPN Epitaxial Type
MOSFET TPC Series

File Size 186.00K  /  5 Page

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Toshiba Electronic Devices & Storage Corporation

Part No. TPCP8606
Description PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PS-8
Tech specs    

Official Product Page

    TOSHIBA[Toshiba Semiconductor]
Part No. TPCP8402
Description TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)

File Size 159.15K  /  6 Page

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Toshiba Electronic Devices & Storage Corporation

Part No. TPCP8512
Description NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.21 V / tf=120 ns / PS-8
Tech specs    

Official Product Page

    TOSHIBA[Toshiba Semiconductor]
Part No. TPCP8401
Description Motor Dreive Notebook PC Portable Machines and Tools

File Size 118.94K  /  5 Page

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Toshiba Electronic Devices & Storage Corporation

Part No. TPCP8514
Description NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8
Tech specs    

Official Product Page

    TPCP8602

Toshiba Semiconductor
Part No. TPCP8602
Description High-Speed Switching Applications DC-DC Converter Applications Strobe Flash Applications

File Size 191.57K  /  5 Page

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Toshiba Electronic Devices & Storage Corporation

Part No. TPCP8605
Description PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / PS-8
Tech specs    

Official Product Page

    TPCP8603

Toshiba Semiconductor
Part No. TPCP8603
Description High-Speed Switching Applications DC/DC Converters Strobe Applications

File Size 204.04K  /  5 Page

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Toshiba Electronic Devices & Storage Corporation

Part No. TPCP8607
Description PNP Bipolar Transistor / VCEO=-120 V / IC=-2.5 A / hFE=120~240 / VCE(sat)=-0.32 V / tf=65 ns / PS-8
Tech specs    

Official Product Page

    TPCP8901

Toshiba Semiconductor
Part No. TPCP8901
Description TOSHIBA Transistor Silicon NPN / PNP Epitaxial Type (PCT Process)

File Size 247.98K  /  7 Page

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    TPCP8H01

Toshiba Semiconductor
Part No. TPCP8H01
Description TOSHIBA Multi-Chip Transistor Silicon NPN Epitaxial Type, Field Effect Transistor Silicon N Channel MOS Type

File Size 247.47K  /  8 Page

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    TPCP8H02

Toshiba Semiconductor
Part No. TPCP8H02
Description TOSHIBA Multi-Chip Transistor Silicon NPN Epitaxial Type, Field Effect Transistor Silicon N Channel MOS Type

File Size 242.86K  /  8 Page

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For HY27UG164G2M-TPCP Found Datasheets File :: 76+       Page :: | 1 | 2 | 3 | 4 | 5 | <6> | 7 | 8 |   

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