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heterostructure Datasheet PDF File

For heterostructure Found Datasheets File :: 128 Search Time::2.609ms
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				sirenza.com SIRENZA MICRODEVICES
Part No.	SGA-9289 SGA-9289Z
OCR Text	...is based on a Silicon Germanium heterostructure Bipolar Transistor (SiGe HBT) process. The SGA-9289 is cost-effective for applications requiring high linearity even at moderate biasing levels. It is well suited for operation at both 5V and ...
Description	Medium Power Discrete SiGe Transistor
File Size	96.48K / 4 Page	View it Online	Download Datasheet

				SIRENZA[SIRENZA MICRODEVICES]
Part No.	SHF-0289 SHF-0289Z
OCR Text	heterostructure FET (HFET) housed in a low-cost surface-mount plastic package. The HFET technology improves breakdown voltage while minimizing Schottky leakage current resulting in higher PAE and improved linearity. Output power at 1dB comp...
Description	0.05 - 6 GHz, 1.0 Watt GaAs HFET
File Size	87.77K / 4 Page	View it Online	Download Datasheet

				SIRENZA MICRODEVICES INC List of Unclassifed Manufacturers ETC[ETC] SIRENZA[SIRENZA MICRODEVICES]
Part No.	SHF-0189 SHF-0189Z
OCR Text	heterostructure FET (HFET) housed in a low-cost surface-mount plastic package. The HFET technology improves breakdown voltage while minimizing Schottky leakage current resulting in higher PAE and improved linearity. Output power at 1dB comp...
Description	C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HFET 0.05 - 6 GHz, 0.5 Watt GaAs HFET
File Size	96.07K / 4 Page	View it Online	Download Datasheet

				List of Unclassifed Manufacturers ETC[ETC]
Part No.	SGA-4563
OCR Text	...es the latest Silicon Germanium heterostructure Bipolar Transistor (SiGe HBT) process featuring 1 micron emitters with FT up to 50 GHz. This circuit uses a Darlington pair topology with resistive feedback for broadband performance as well a...
Description	DC-2500 MHZ SILICON GERMANIUM CASCADEABLE GAIN BLOCK
File Size	263.58K / 5 Page	View it Online	Download Datasheet

				Unknow List of Unclassifed Manufacturers ETC[ETC] Electronic Theatre Controls, Inc.
Part No.	ELD-810-525
OCR Text	... High-power, high-speed, double heterostructure with removed substrate, with stand off lead 6 - 0,3 0,8 - 0,4 0,6 - 0,2 2 - 1,0 31,8 - 1,7 Note: Special packages without stand off available on request Maximum Ratings Tamb = 25C...
Description	LED lamp
File Size	52.22K / 1 Page	View it Online	Download Datasheet

				WJCI[WJ Communication. Inc.]
Part No.	FP2189-PCB900S FP2189 FP2189-G FP2189-PCB1900S FP2189-PCB2140S
OCR Text	...a high performance 1-Watt HFET (heterostructure FET) in a low-cost SOT-89 surfacemount package. This device works optimally at a drain bias of +8 V and 250 mA to achieve +43 dBm output IP3 performance and an output power of +30 dBm at 1-dB ...
Description	1-Watt HFET
File Size	607.64K / 12 Page	View it Online	Download Datasheet

				WJ Communications WJCI[WJ Communication. Inc.] Electronic Theatre Controls, Inc.
Part No.	FP31QF-PCB900 FP31QF FP31QF-F FP31QF-PCB1900 FP31QF-PCB2140
OCR Text	...a high performance 2-Watt HFET (heterostructure FET) in a low-cost lead-free 28-pin 6x6 mm QFN (Quad Flatpack, No-Lead) surface-mount package. This device works optimally at a drain bias of +9 V and 450 mA to achieve +46 dBm output IP3 perf...
Description	2-Watt HFET 2瓦异质结场效应晶体管 12 AMP MINIATURE POWER RELAY 2瓦异质结场效应晶体管
File Size	573.54K / 13 Page	View it Online	Download Datasheet

				WJCI[WJ Communication. Inc.]
Part No.	FP31QF_06 FP31QF FP31QF-F FP31QF-PCB1900 FP31QF-PCB2140 FP31QF-PCB900 FP31QF06
OCR Text	...a high performance 2-Watt HFET (heterostructure FET) in a low-cost lead-free/RoHScompliant 28-pin 6x6 mm QFN (Quad Flatpack, NoLead) surface-mount package. This device works optimally at a drain bias of +9 V and 450 mA to achieve +46 dBm ou...
Description	2-Watt HFET
File Size	470.24K / 12 Page	View it Online	Download Datasheet

				Mitsubishi Electric Sem... Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric, Corp.
Part No.	FU-116SLD-F1
OCR Text	...**Facet selective-growth buried heterostructure APPLICATION FitL,LAN ABSOLUTE MAXIMUM RATINGS Parameter Laser diode (Tc=25 C) Symbol Conditions CW Rating 2.5 Unit mW Optical output Pf power from fib er end (Note1) Reverse voltage V...
Description	SC-CONNECTORIZED MODULE SC-CONNECTORIZED MODULE 资深大律师，连接器的模块
File Size	59.75K / 3 Page	View it Online	Download Datasheet

				Mitsubishi Electric Sem... MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
Part No.	FU-116SLD-F3M1
OCR Text	...**Facet selective-growth buried heterostructure APPLICATION FitL,LAN ABSOLUTE MAXIMUM RATINGS Parameter Laser diode (Tc=25 C) Symbol Conditions CW Rating 0.5 Unit mW Optical output Pf power from fib er end (Note1) Reverse voltage V...
Description	SC-CONNECTORIZED MODULE
File Size	61.07K / 3 Page	View it Online	Download Datasheet

For heterostructure Found Datasheets File :: 128 Search Time::2.609ms
Page :: | 1 | 2 | 3 | 4 | 5 | <6> | 7 | 8 | 9 | 10 | 11 | 12 | 13 |