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  hdmostm Datasheet PDF File

For hdmostm Found Datasheets File :: 357    Search Time::1.844ms    
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    IXYS[IXYS Corporation]
IXYS, Corp.
Part No. IXTH14N100
OCR Text ...ge JEDEC TO-247 AD Low RDS (on) hdmostm process Rugged polysilicon gate cell structure Fast switching times l Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Symbol Test Conditions IGSS IDSS R DS(on...
Description Discrete MOSFETs: Standard N-channel Types
MegaMOSTMFET 14 A, 1000 V, 0.82 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD

File Size 45.69K  /  2 Page

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    IXYS[IXYS Corporation]
Part No. IXTH16P20
OCR Text ... JEDEC TO-247 AD * Low RDS (on) hdmostm process 1.13/10 Nm/lb.in. 6 g * * * Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance (<5 nH) - easy to drive and to protect Symbol ...
Description Standard Power MOSFET

File Size 78.39K  /  2 Page

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    IXFN39N90NBSP IXFN39N90

IXYS[IXYS Corporation]
Part No. IXFN39N90NBSP IXFN39N90
OCR Text ...m/lb.in. 30 g * Low RDS (on) hdmostm process * Rugged polysilicon gate cell structure * Unclamped Inductive Switching (UIS) rated * Low package inductance * Fast intrinsic Rectifier Applications * DC-DC converters Symbol Test ...
Description HiPerFET Power MOSFETs Single MOSFET Die

File Size 123.63K  /  4 Page

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    IXYS[IXYS Corporation]
Part No. IXFT32N50 IXFH32N50 IXFH30N50 IXFT30N50
OCR Text hdmostm Family VDSS IXFH/IXFT 30N50 IXFH/IXFT 32N50 500 V 500 V ID25 30 A 32 A RDS(on) 0.16 W 0.15 W trr 250 ns TO-247 AD (IXFH) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAS EAR dv/dt PD TJ TJM Tstg TL Md Weight Test Condi...
Description N-Channel Enhancement Mode HiPerFET Power MOSFET(??ぇ婕???荤┛?靛?00V,瀵奸??甸?.16惟??娌??澧?己??iPerFET???MOSFET)
Discrete MOSFETs: HiPerFET Power MOSFETS

File Size 109.42K  /  4 Page

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    IXGP12N60U1

IXYS[IXYS Corporation]
Part No. IXGP12N60U1
OCR Text ...D in one package 2nd generation hdmostm process Low VCE(sat) - for minimum on-state conduction losses MOS Gate turn-on - drive simplicity Fast Recovery Epitaxial Diode FRED) - soft recovery with low IRM l l l l l l Symbol Test Condit...
Description Low VCE(sat) IGBT with Diode Combi Pack
IXGP12N60U1

File Size 94.50K  /  6 Page

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    IXYS[IXYS Corporation]
Part No. IXFK27N80 IXFK25N80 IXFN27N80 IXFN25N80
OCR Text ... nitride isolation Low RDS (on) hdmostm process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance Fast intrinsic Rectifier VDSS VGH(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3 mA VDSS ...
Description CAP,Polypropylene,60uF,10-% Tol,10 % Tol
HiPerFETTM Power MOSFETs
MOSFET with FAST Intrinsic Diode
Discrete MOSFETs: HiPerFET Power MOSFETS

File Size 159.97K  /  4 Page

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    IXSH25N120AU1NBSP IXSH25N120AU1

IXYS[IXYS Corporation]
Part No. IXSH25N120AU1NBSP IXSH25N120AU1
OCR Text ...in one package * 2nd generation hdmostm process Low VCE(sat) - for minimum on-state conduction losses * MOS Gate turn-on - drive simplicity Applications * AC motor speed control * DC servo and robot drives * Uninterruptible power supplies (...
Description IGBT with Diode

File Size 35.20K  /  2 Page

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    IXTH24P20NBSP IXTH24P20

IXYS Corporation
Part No. IXTH24P20NBSP IXTH24P20
OCR Text ... JEDEC TO-247 AD * Low RDS (on) hdmostm process 1.13/10 Nm/lb.in. 6 g * * * Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance (<5 nH) - easy to drive and to protect Symbol ...
Description Standard Power MOSFET

File Size 78.10K  /  2 Page

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    IXFN340N06

IXYS[IXYS Corporation]
Part No. IXFN340N06
OCR Text ...ride isolation Low RDS (on) hdmostm process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Mounting torque Terminal connection torque 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g Low package inducta...
Description HiPerFET Power MOSFETs Single Die MOSFET

File Size 99.22K  /  2 Page

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For hdmostm Found Datasheets File :: 357    Search Time::1.844ms    
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