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  gate-igbt Datasheet PDF File

For gate-igbt Found Datasheets File :: 9951    Search Time::2.734ms    
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    DIM250PLM33-TS000 DIM250PLM33-TS000-15

Dynex Semiconductor
Part No. DIM250PLM33-TS000 DIM250PLM33-TS000-15
OCR Text ... enhancement mode, insulated gate bipolar transistor (igbt) chopper module configured with the lower arm of the bridge controlled. the igbt has a wide reverse bias safe operating area (rbsoa) . this device is optimised...
Description IGBT Chopper Module

File Size 353.79K  /  8 Page

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    DIM250PLM33-TL000

Dynex Semiconductor
Part No. DIM250PLM33-TL000
OCR Text ... enhancement mode, insulated gate bipolar transistor (igbt) chopper module configured with the lower arm of the bridge controlled. the igbt has a wide reverse bi as safe operating area (rbsoa) . this device is opt...
Description IGBT Chopper Module

File Size 319.75K  /  8 Page

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Part No. MBM150GR12A
OCR Text ... o lt age v ce s v 120 0 gate-emitter v o lt age v ges v 20 dc i c 1 5 0 coll ector curre nt 1ms i cp a 300 dc ...igbt v ge = = ? = = = ? = = = = = 1. the information ...
Description 150 A, 1200 V, N-CHANNEL IGBT

File Size 76.51K  /  4 Page

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    VISHAY INTERTECHNOLOGY INC
Part No. GB50NA120UX
OCR Text ... t c = 25 c 76 t c = 80 c 52 gate to emitter voltage v ge 20 v power dissipation, igbt p d t c = 25 c 431 w t c = 80 c 242 power dissipation, diode p d t c = 25 c 278 t c = 80 c 156 rms isolation voltage v isol any terminal to case,...
Description 84 A, 1200 V, N-CHANNEL IGBT

File Size 150.59K  /  9 Page

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Part No. IRGP4065DPBF
OCR Text ... max 150 c key parameters gc e gate collector em itter to-247ac e g n-channel c g c e c absolute maximum ratings parameter units...igbt) thermal resistance junction-to-case-(each igbt) ??? 0.80 r jc (diode) thermal resistance...
Description 70 A, N-CHANNEL IGBT, TO-247AC

File Size 346.77K  /  8 Page

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    IHW20N65R5

Infineon Technologies AG
Part No. IHW20N65R5
OCR Text ...itedby t vjmax i fpuls 60.0 a gate-emitter voltage v ge 20 v powerdissipation t c =25c powerdissipation t c =100c p tot 150.0 75.0...igbt thermal resistance, junction - case r th(j-c) 1.00 k/w diode thermal resistance, junction - cas...
Description high power thyristor diode

File Size 2,024.06K  /  15 Page

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    MGP7N60ED MGP7N60ED_D ON1877 ON1876

ONSEMI[ON Semiconductor]
Part No. MGP7N60ED MGP7N60ED_D ON1877 ON1876
OCR Text Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) is co-packaged with a soft recovery ultra-fast rectifier and uses an advanced termination scheme to pro...
Description Insulated Gate Bipolar Transistor withr Anti-Parallel Diode
IGBT & DIODE IN TO-220 7.0 A @ 90 10 A @ 25 600 VOLTS
From old datasheet system

File Size 140.16K  /  6 Page

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    MGP7N60E

MOTOROLA[Motorola, Inc]
Part No. MGP7N60E
OCR Text Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage-blocking capability. Its new 600 V IGBT tec...
Description Insulated Gate Bipolar Transistor

File Size 118.28K  /  6 Page

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    IHW20N135R3

Infineon Technologies AG
Part No. IHW20N135R3
OCR Text ...ckagepindefinition: ?pin1-gate ?pin2&backside-collector ?pin3-emitter keyperformanceandpackageparameters type v ce i c v...igbt thermal resistance, junction - case r th(j-c) 0.48 k/w diode thermal resistance, junction - cas...
Description high power thyristor diode

File Size 2,205.02K  /  15 Page

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