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Sanyo
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| Part No. |
2SA1417
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| OCR Text |
...ations
Features
* Adoption of fbet, MBIT processes. * High breakdown voltage and large current capacity. * Fast switching time. * Very small size making it easy to provide highdensity, small-sized hybrid ICs.
Package Dimensions
unit:m... |
| Description |
PNP Epitaxial Planar Silicon Transistors High-Voltage Switching Applications
PNP/NPN Epitaxial Planar Silicon Transistors
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| File Size |
140.05K /
4 Page |
 View
it Online |
Download Datasheet
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Sanyo
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| Part No. |
2SA1731
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| OCR Text |
...ations
Features
* Adoption of fbet, MBIT processes. * Large current capacity. * Low collector-to-emitter saturation voltage. * Fast switching speed.
Package Dimensions
unit:mm 2045B
[2SA1731]
1 : Base 2 : Collector 3 : Emitter 4 :... |
| Description |
PNP Epitaxial Planar Silicon Transistor High-Speed Switching Applications
PNP Epitaxial Planar Silicon Transistors
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| File Size |
99.64K /
4 Page |
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it Online |
Download Datasheet |
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Sanyo
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| Part No. |
2SC4271
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| OCR Text |
...urrent (IC=300mA) * Adoption of fbet process.
JEDEC : TO-126
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Cu... |
| Description |
NPN Epitaxial Planar Silicon Transistor High-Definition CRT Display Video Output Applications
NPN Epitaxial Planar Silicon Transistors
|
| File Size |
77.09K /
3 Page |
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it Online |
Download Datasheet |
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Sanyo
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| Part No. |
2SC4413
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| OCR Text |
...e small and slim. * Adoption of fbet process. * High DC current gain. * Low collector-to-emitter saturation voltage. * High VEBO. * Small Cob.
Package Dimensions
unit:mm 2059B
[2SC4413]
0.425
0.3 3 0~0.1
0.2
0.15
1.250
2.... |
| Description |
NPN Epitaxial Planar Silicon Transistor Low-Frequency General-Purpose Amplifier Applications
NPN Epitaxial Planar Silicon Transistors
|
| File Size |
89.49K /
3 Page |
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it Online |
Download Datasheet |
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Sanyo
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| Part No. |
2SC4523
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| OCR Text |
...ations
Features
* Adoption of fbet, MBIT process. * Large current capacity. * Low collector-to-emitter saturation voltage. * Fast switching speed.
Package Dimensions
unit:mm 2045B
[2SC4522]
1.5
6.5 5.0 4 2.3 0.5
0.85 0.7
5.5
... |
| Description |
NPN Epitaxial Planar Silicon Transistors High-Speed Switching Applications
|
| File Size |
89.08K /
4 Page |
View
it Online |
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Sanyo
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| Part No. |
2SD1682 2SB1142
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| OCR Text |
...682]
Features
* Adoption of fbet, MBIT processes. * Low saturation voltage. * Large current capacity and wide ASO.
( ) : 2SB1142
B : Base C : Collector E : Emitter SANYO : TO-126ML
Conditions Ratings (-)60 (-)50 (-)6 (-)2.5 (-)5.... |
| Description |
PNP Epitaxial Planar Silicon Transistors 50V/2.5A High-Speed Switching Applications
PNP/NPN Epitaxial Planar Silicon Transistors
NPN Epitaxial Planar Silicon Transistors 50V/2.5A High-Speed Switching Applications
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| File Size |
148.64K /
4 Page |
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it Online |
Download Datasheet |
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Sanyo
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| Part No. |
2SD1683 2SB1143 2SD1682R
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| OCR Text |
...683]
Features
* Adoption of fbet, MBIT processes. * Low saturation voltage. * Large current capacity and wide ASO.
( ) : 2SB1143
B : Base C : Collector E : Emitter SANYO : TO-126ML
Specifications
Absolute Maximum Ratings at Ta... |
| Description |
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 2.5A I(C) | TO-126
PNP/NPN Epitaxial Planar Silicon Transistors
NPN Epitaxial Planar Silicon Transistors 50V/4A Switching Applications
PNP Epitaxial Planar Silicon Transistors 50V/4A Switching Applications
|
| File Size |
144.92K /
4 Page |
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it Online |
Download Datasheet |
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Sanyo
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| Part No. |
FC150
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| OCR Text |
...d in one package. * Adoption of fbet process. * High DC current gain. * Hgih VEBO. Electrical Connection
Package Dimensions
unit:mm 2067
[FC150]
E1:Emitter 1 B1:Base 1 C2:Collector 2 E2:Emitter 2 B2:Base 2 C1:Collector 1
TR1=PNP ... |
| Description |
PNP/NPN Epitaxial Planar Silicon Composite Transistor
|
| File Size |
170.61K /
4 Page |
View
it Online |
Download Datasheet |
| |
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Sanyo
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| Part No. |
2SA1575 2SC4080
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| OCR Text |
...y characteristic. * Adoption of fbet process.
Package Dimensions
unit:mm 2038
[2SA1575/2SC4080]
E : Emitter C : Collector B : Base
( ) : 2SA1575
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter Collector-to-Base... |
| Description |
NPN Epitaxial Planar Silicon Transistors High-Frequency Amplifier, Wide-Band Amplifier Applications
PNP Epitaxial Planar Silicon Transistors High-Frequency Amplifier, Wide-Band Amplifier Applications
PNP/NPN Epitaxial Planar Silicon Transistors
|
| File Size |
20.09K /
2 Page |
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it Online |
Download Datasheet |
| |
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Sanyo
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| Part No. |
2SA1855 2SC4837
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| OCR Text |
...837]
Features
* Adoption of fbet and MBIT processes. * Large allowable collector dissipation. * Low saturation voltage. * Wide ASO and large current capacity. * Usage of radial taping to meet automatic mounting.
( ) : 2SA1855
E : ... |
| Description |
NPN Epitaxial Planar Silicon Transistor 50V/4A Switching Applications
PNP/NPN Epitaxial Planar Silicon Transistors
PNP Epitaxial Planar Silicon Transistor 50V/4A Switching Applications
|
| File Size |
148.25K /
4 Page |
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it Online |
Download Datasheet |
|
Price and Availability
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