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K155TB1 LYH1035 SC3AS4F 16000 C4663 SS496A BD242C SC3AS05F
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    IRLML5203TRPBF

International Rectifier
Part No. IRLML5203TRPBF
OCR Text ...ssing techniques to achieve the extremely low on-resistance per silicon area. this benefit provides the designer with an extremely efficient device for use in battery and load management applications. a thermally enhanced large pad leadfra...
Description -30V Single P-Channel HEXFET Power MOSFET in a Micro 3 package

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    IRLML5203GPBF IRLML5203GTRPBF

International Rectifier
Part No. IRLML5203GPBF IRLML5203GTRPBF
OCR Text ...ssing techniques to achieve the extremely low on-resistance per silicon area. this benefit provides the designer with an extremely efficient device for use in battery and load management applications. a thermally enhanced large pad leadfra...
Description -30V Single P-Channel Lead Free HEXFET Power MOSFET in a Halogen Free Micro3 package

File Size 202.69K  /  9 Page

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    FCS-1131-18 CAS-1400

Level One
Part No. FCS-1131-18 CAS-1400
OCR Text ...ge) to enhance visibility under extremely bright or dark environments - features 3dnr (3-dimension noise reduction) to produce extremely clear picture quality even under low light condition - removable ir-cut filter for day and night survei...
Description Fixed IP Network Camera, 2-Megapixel, 802.3af PoE

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    ZP Semiconductor
Part No. IRLML2502TRPBF
OCR Text ...rocessing techniques to achieve extremely low on-resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet ? power mosfets are well known for, provides the designer with an...
Description HEXFETPower MOSFET

File Size 319.49K  /  2 Page

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    SiTime Corp.
Part No. SIT1576
OCR Text ... 1000c. episeal creates an extremely strong, clean, vacuum chamber that encapsulate s the mems resonator and ensures the best performance and reliability. during episeal, a poly silicon cap is grown on top of the reso...
Description 1.2mm2 uPower, Low-Jitter, 1Hz - 2.5 MHz Super-TCXO

File Size 992.51K  /  10 Page

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    SiTime Corp.
Part No. SIT1568
OCR Text ...1000c. episeal creates an extremely strong, clean, vacuum chamber that encapsulates the mems resonator and ensures the best performance and reliability. during episeal, a poly silicon cap is gro wn on top ...
Description 1.2mm2Micropower, 5 ppm, 32.768 kHz TCXO with In-System Auto-Calibration

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    SiTime Corp.
Part No. SIT1566
OCR Text ... 1000c. episeal creates an extremely strong, clean, vacuum chamber that encapsulates the mems resonator and e nsures the best performance and reliability. during episeal, a poly silicon cap is grown on top of the reso...
Description 1.2mm2 uPower, Low-Jitter, 3 & 5 ppm, 32.768 kHz Super-TCXO

File Size 798.93K  /  9 Page

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    SiTime Corp.
Part No. SIT1552
OCR Text ... 1000c. episeal creates an extremely strong, clean, vacuum chamber that encapsulates the mems resonator and ensures the best performance and reliability. during episeal, a poly silicon cap is grown on top of the reso...
Description Smallest (1.2mm2), Smallest (1.2mm2), Ultra-Low Power, 32.768 kHz

File Size 682.68K  /  11 Page

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    74LVC1G79GX 74LVC1G79GF

NXP Semiconductors
Part No. 74LVC1G79GX 74LVC1G79GF
OCR Text ... 40 ? cto+125 ? c xson6 plastic extremely thin small outline package; no leads; 6 terminals; body 1 ? 1.45 ? 0.5 mm sot886 74lvc1g79gf ? 40 ? c to +125 ? c xson6 plastic extremely thin small outline package; no leads; 6 terminals; body ...
Description Single D-type flip-flop; positive-edge trigger

File Size 369.88K  /  21 Page

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    ALD210808PCL ALD210808APCL ALD210808ASCL ALD210808SCL

Advanced Linear Devices
Part No. ALD210808PCL ALD210808APCL ALD210808ASCL ALD210808SCL
OCR Text ...ages can be built to operate at extremely low supply/bias voltage levels. for example, a nanopower input amplifier stage operating at less than 1.0v supply voltage has been successfully built with these devices. ald210808a epad mosfets feat...
Description PRECISION N-CHANNEL EPAD MOSFET ARRAY QUAD HIGH DRIVE MATCHED PAIR

File Size 111.36K  /  12 Page

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