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				Toshiba Semiconductor
Part No.	TK12E60U
OCR Text	...yp.) (3) low leakage current: i dss = 100 a (max) (v ds = 600 v) (4) enhancement mode: v th = 3.0 to 5.0 v (v ds = 10 v, i d = 1 ma) 3. 3. 3. 3. packaging and internal circuit packaging and internal circuit packaging and internal...
Description	Switching Voltage Regulators MOSFETs Silicon N-Channel MOS (DTMOS? MOSFETs Silicon N-Channel MOS (DTMOS?
File Size	240.87K / 9 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	TK12D60U
OCR Text	...p.) ? low leakage current: i dss = 100 a (v ds = 600 v) ? enhancement mode: v th = 3.0 to 5.0 v (v ds = 10 v, i d = 1 ma) absolute maximum ratings (ta = 25c) characteristics symbol rating unit drain-source voltage v d...
Description	Field Effect Transistor Silicon N Channel MOS Type (DTMOS? Field Effect Transistor Silicon N Channel MOS Type (DTMOS?
File Size	168.35K / 6 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	TK12A45D
OCR Text	...yp.) ? low leakage current: i dss = 10 a (max) (v ds = 450 v) ? enhancement-mode: v th = 2.0 to 4.0 v (v ds = 10 v, i d = 1 ma) absolute maximum ratings (ta = 25c) characteristics symbol rating unit drain-source voltag...
Description	Switching Regulator Applications Switching Regulator Applications
File Size	196.75K / 6 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF3710L IRF3710S
OCR Text	...less otherwise specified) V(BR)dss V(BR)dss/TJ RDS(on) VGS(th) gfs Idss IGSS Qg Qgs Qgd td(on) tr td(off) tf LS Ciss Coss Crss Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On...
Description	Power MOSFET(Vdss=100V, Rds(on)=0.025ohm, Id=57A) 功率MOSFET（减振钢板基本\u003d 100V的，的Rds（on）\u003d 0.025ohm，身份证\u003d 57A条） Power MOSFET(Vdss=100V/ Rds(on)=0.025ohm/ Id=57A) Power MOSFET(Vdss=100V Rds(on)=0.025ohm Id=57A)
File Size	180.61K / 10 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF3710 IRF3710PBF
OCR Text	...less otherwise specified) V(BR)dss V(BR)dss/TJ RDS(on) VGS(th) gfs Idss IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss EAS Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-So...
Description	Power MOSFET(Vdss=100V, Rds(on)=23mohm, Id=57A) 功率MOSFET（减振钢板基本\u003d 100V的，的Rds（on）\u003d 23mohm，身份证\u003d 57A条） Power MOSFET(Vdss=100V Rds(on)=23mohm Id=57A) 100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
File Size	92.57K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3711 IRF3711L IRF3711S
OCR Text	...o-Source Breakdown Voltage V(BR)dss/TJ Breakdown Voltage Temp. Coefficient V(BR)dss RDS(on) VGS(th) Idss IGSS Min. 20 --- --- Static Drain-to-Source On-Resistance --- Gate Threshold Voltage 1.0 --- Drain-to-Source Leakage Current --- Gate-t...
Description	Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A?? Power MOSFET(Vdss=20V/ Rds(on)max=6.0mohm/ Id=110A) Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A?) Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A) Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A?
File Size	243.87K / 11 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	MCH6320 MCH6320-TL-W
OCR Text	...nit drain to source voltage v dss ? 12 v gate to source voltage v gss 10 v drain current (dc) i d ? 3.5 a drain current (pulse) pw 10 s, duty cycle 1% i dp ? 14 a power dissipation when mounted on ceramic substrate ...
Description	Single P-Channel Power MOSFET
File Size	361.17K / 5 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF3805 IRF3805L IRF3805S
OCR Text	...ise specified) Parameter V(BR)dss V(BR)dss/TJ RDS(on) VGS(th) gfs Idss IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Coss Coss Coss eff. Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Sou...
Description	AUTOMOTIVE MOSFET
File Size	358.50K / 12 Page	View it Online	Download Datasheet

				IRF[International Rectifier] International Rectifier, Corp.
Part No.	IRF3808L IRF3808S RF3808S
OCR Text	...less otherwise specified) V(BR)dss V(BR)dss/TJ RDS(on) VGS(th) gfs Idss IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Coss Coss Coss eff. Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient St...
Description	75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 75V Single N-Channel HEXFET Power MOSFET in a TO-262 package AUTOMOTIVE MOSFET Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A?) Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A) Power MOSFET(Vdss=75V/ Rds(on)=0.007ohm/ Id=106A) Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A 功率MOSFET（减振钢板基本\u003d 75V的，的Rdson）\u003d 0.007ohm，身份证\u003d 106A章?
File Size	159.77K / 11 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF3808 IRF3808PBF
OCR Text	...less otherwise specified) V(BR)dss V(BR)dss/TJ RDS(on) VGS(th) gfs Idss IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Coss Coss Coss eff. Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient St...
Description	75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A) Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A?) Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A?
File Size	129.31K / 9 Page	View it Online	Download Datasheet

For dss Found Datasheets File :: 44052 Search Time::2.437ms
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