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Philips
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| Part No. |
BTA216SERIESF BTA216SERIESD BTA216SERIESD/EANDF
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| OCR Text |
.....E 60 ...F 70 V/s MAX. UNIT
dicom/dt
2.5
6.2
18
-
A/ms
dicom/dt
12
20
50
-
A/ms
2 Device does not trigger in the T2-, G+ quadrant. April 2002 2 Rev 2.000
Philips Semiconductors
Product specifica... |
| Description |
Transient Voltage Suppressor Diodes
Three quadrant triacs guaranteed commutation
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| File Size |
43.09K /
6 Page |
 View
it Online |
Download Datasheet
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Philips
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| Part No. |
BTA216XSERIESB
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| OCR Text |
... otherwise stated SYMBOL dVD/dt dicom/dt tgt PARAMETER Critical rate of rise of off-state voltage Critical rate of change of commutating current Gate controlled turn-on time CONDITIONS VDM = 67% VDRM(max); Tj = 125 C; exponential waveform; ... |
| Description |
Three quadrant triacs high commutation
|
| File Size |
38.32K /
6 Page |
View
it Online |
Download Datasheet |
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Philips
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| Part No. |
BTA212DSERIES BTA212ESERIES BTA212_SERIES_D_E_F_5
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| OCR Text |
.....E 60 ...F 70 V/s MAX. UNIT
dicom/dt
1.2
3.5
5
-
A/ms
dicom/dt
Critical rate of change of commutating current
4.3
16
19
-
A/ms
2 Device does not trigger in the T2-, G+ quadrant. April 2002 2 Rev 2.... |
| Description |
Three quadrant triacs guaranteed commutation
From old datasheet system
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| File Size |
43.69K /
6 Page |
View
it Online |
Download Datasheet |
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|
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Philips
|
| Part No. |
BTA212XSERIES BTA212X_SERIES_D_E_F_4
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| OCR Text |
.....F 70
MAX. -
UNIT V/s
dicom/dt
1.2
3.5
4.5
-
A/ms
dicom/dt
Critical rate of change of commutating current
4.3
16
19
-
A/ms
April 2002
3
Rev 2.000
Philips Semiconductors
Product sp... |
| Description |
Three quadrant triacs guaranteed commutation
From old datasheet system
|
| File Size |
48.99K /
7 Page |
View
it Online |
Download Datasheet |
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NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
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| Part No. |
BTA212-800F BTA212SERIESD.EANDF BTA212SERIESDEANDF BTA212-600D BTA212-800E
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| OCR Text |
...0 TYP. ...D 30 V/s MAX. UNIT
dicom/dt
1.8
3.5
5
3
-
A/ms
dicom/dt
5
16
19
100
-
A/ms
...D, E, F tgt Gate controlled turn-on time ITM = 12 A; VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/s 2 s
2 De... |
| Description |
Three quadrant triacs guaranteed commutation(涓?薄?????‘淇??????х?)
Three quadrant triacs guaranteed commutation(三象限双向确保换向可控硅) 800 V, 12 A, TRIAC, TO-220AB
TRIAC|600V V(DRM)|12A I(T)RMS|TO-220AB
Transient Voltage Suppressor Diodes
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| File Size |
43.21K /
6 Page |
View
it Online |
Download Datasheet |
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|
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Philips
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| Part No. |
BTA212BSERIESB BTA212B_SERIES_B_1 BTA212B-500B
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| OCR Text |
... otherwise stated SYMBOL dVD/dt dicom/dt tgt PARAMETER Critical rate of rise of off-state voltage Critical rate of change of commutating current Gate controlled turn-on time CONDITIONS VDM = 67% VDRM(max); Tj = 125 C; exponential waveform; ... |
| Description |
Transient Voltage Suppressor Diodes
From old datasheet system
Three quadrant triacs high commutation
|
| File Size |
37.59K /
6 Page |
View
it Online |
Download Datasheet |
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