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Motorola Inc
ONSEMI[ON Semiconductor]
MOTOROLA[Motorola Inc]
http://
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| Part No. |
D44H10 D45H11 D44H8 D45H8 D44H D45H10 D44H11 ON0271
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| Description |
10 AMPERE complementary SILICON POWER TRANSISTORS 60, 80 VOLTS
Card Edge Connector; No. of Contacts:24; Pitch Spacing:0.156"; Contact Termination:Solder; Leaded Process Compatible:Yes; Mounting Hole Dia:0.128" RoHS Compliant: Yes 10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB
complementary SILICON POWER TRANSISTORS 10 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220AB
10 AMPERE complementary SILICON POWER TRANSISTORS 60/ 80 VOLTS
10 AMPERE complementary SILICON POWER TRANSISTORS 60 80 VOLTS
From old datasheet system
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| File Size |
103.01K /
4 Page |
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Download Datasheet
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Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FDB2572 FDP2572 FDB2572NL
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| Description |
N-Channel powertrench mosfET 150V, 29A, 54mз 4 A, 150 V, 0.054 ohm, N-CHANNEL, Si, POWER, mosfET, TO-220AB
150V N-Channel UltraFET Trench mosfET 29A, 0.056 Ohms @ VGS = 10V, TO-263/D2PAK Package 4 A, 150 V, 0.054 ohm, N-CHANNEL, Si, POWER, mosfET, TO-263AB
N-Channel powertrench mosfET 150V/ 29A/ 54m
N-Channel powertrench mosfET 150V, 29A, 54m蟹
N-Channel powertrench mosfET 150V, 29A, 54m?/a>
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| File Size |
206.03K /
11 Page |
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ON Semiconductor
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| Part No. |
NTHD3100C NTHD3100CT1 NTHD3100CT1G NTHD3100CT3 NTHD3100CT3G
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| Description |
Power mosfET complementary, 20 V, 3.9 A/-4.4 A ChipFET™
Power mosfET complementary, 20 V, 3.9 A/-4.4 A ChipFET™; Package: ChipFET™; No of Pins: 8; Container: Tape and Reel; Qty per Container: 3000 2.9 A, 20 V, 0.08 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, mosfET
Power mosfET 20V, 3.9A/4.4A, complementary ChipFET(20V, 3.9A/4.4A功率mosfET)
Power mosfET 20 V, 3.9 A /−4.4 A, complementary ChipFET
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| File Size |
141.04K /
8 Page |
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Price and Availability
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