| |
|
 |
ONSEMI[ON Semiconductor]
|
| Part No. |
MGW12N120
|
| Description |
Insulated Gate Bipolar Transistor N-Channel Insulated Gate Bipolar Transistor 20 A, 1200 V, N-CHANNEL IGBT, TO-247AE
|
| File Size |
133.06K /
5 Page |
View
it Online |
Download Datasheet
|
| |
|
 |
TOSHIBA[Toshiba Semiconductor]
|
| Part No. |
GT15M321
|
| Description |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
|
| File Size |
257.03K /
6 Page |
View
it Online |
Download Datasheet
|
| |
|
 |

Tyco Electronics
|
| Part No. |
2-1191566-7 2-1190527-4 2-1191560-6 014389-000 2-1191569-0
|
| Description |
WIRE, RADIATION-CROSSLINKED, MODIFIED, ETFE-INSULATED, TIN-COATEDCOPPER, LIGHTWEIGHT WIRE, RADIATION-CROSSLINKED, MODIFIED, ETFE-INSULATED, TIN-COATEDCOPPER, LIGHTWEIGHT WIRE, RADIATION-CROSSLINKED, MODIFIED, ETFE-INSULATED, TIN-COATED COPPER, LIGHTWEIGHT WIRE RADIATIONN-CROSSLINKED, MODIFIED, ETFE-INSULATED, TIN-COATEDCOPPER, LIGHTWEIGHT
|
| File Size |
58.57K /
2 Page |
View
it Online |
Download Datasheet
|
| |
|
 |
TOSHIBA[Toshiba Semiconductor]
|
| Part No. |
GT15Q311
|
| Description |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
|
| File Size |
167.37K /
7 Page |
View
it Online |
Download Datasheet
|
|

Price and Availability
|