912.1mhz pdf Datasheet P6 Full Text Search --- IC-ON-LINE


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912.1mhz Datasheet PDF File

For 912.1mhz Found Datasheets File :: 149 Search Time::1.25ms
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				Samsung semiconductor
Part No.	K4S510732B K4S510732B-TC1H K4S510732B-TC1L K4S510732B-TC75 K4S510732B-TL1H K4S510732B-TL1L K4S510732B-TL75
OCR Text	...TION The K4S510732B is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 16,777,216 words by 8 bits, fabricated with...1MHz, VREF =1.4V 200 mV) Pin Symbol CCLK CIN CADD Ccs COUT Min 5.0 5.0 5.0 2.5 8.0 Max 9.0 10.0 10....
Description	Stacked 512Mbit SDRAM
File Size	100.49K / 11 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
Part No.	K4S510832M K4S510832M-TC_TL1H K4S510832M-TC_TL1L K4S510832M-TC_TL75 K4S510832M-TC1H K4S510832M-TC1L K4S510832M-TL75 K4S510832M-TC75 K4S510832M-TL1H K4S510832M-TL1L K4S510832M-TC/TL1L K4S510832M-TC/TL1H K4S510832M-TC/TL75
OCR Text	...TION The K4S510832M is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 16,777,216 words by 8 bits, fabricated with...1MHz, VREF = 1.4V 200 mV) Pin Symbol CCLK CIN CDQM CADD COUT Min 2.5 2.5 2.5 2.5 4.0 Max 4.0 5.0 5....
Description	16M x 8Bit x 4 Banks Synchronous DRAM Data Sheet 16M x 8bit x 4 Banks Synchronous DRAM LVTTL 1,600 × 8位4银行同步DRAM LVTTL
File Size	110.61K / 11 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	RD09MUP2
OCR Text	...0.900 0.901 0.905 0.908 0.909 0.912 0.916 0.918 0.922 0.923 0.928 0.930 0.933 0.936 0.937 0.939 0.939 0.945 0.947 0.950 0.952 0.950 0.952 0.953 0.953 0.956 0.957 0.961 0.957 0.961 0.962 0.960 0.962 0.963 0.963 0.964 0.962 0.964 0.965 0.965 ...
Description	Silicon MOSFET Power Transistor, 520MHz, 8W
File Size	148.99K / 7 Page	View it Online	Download Datasheet

				MICROSEMI[Microsemi Corporation]
Part No.	APT4M120K
OCR Text	...30) Drain 12.192 (.480) 9.912 (.390) 3.42 (.135) 2.54 (.100) 4.08 (.161) Dia. 3.54 (.139) 3.683 (.145) MAX. 12-2006 0.50 (.020) 0.41 (.016) 2.92 (.115) 2.04 (.080) 4.82 (.190) 3.56 (.140) 14.73 (.580) 12.70 (.500) ...
Description	N-Channel MOSFET
File Size	240.23K / 4 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor] Hitachi,Ltd.
Part No.	BB501C BB501 BB5.1
OCR Text	...0.953 0.947 0.942 0.929 0.923 0.912 0.903 0.886 0.879 0.873 0.859 0.846 0.836 0.827 0.815 ANG -2.8 -10.0 -13.6 -16.5 -20.0 -23.7 -26.8 -29.6 -32.8 -35.4 -38.5 -41.2 -44.2 -46.8 -49.2 -52.4 -55.4 -58.0 -60.4 -62.8 S21 MAG 2.40 2.38 2.38 2.37...
Description	Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier 内建偏置电路场效应晶体管集成电路超高甚高频射频放大器
File Size	69.33K / 13 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	BB501M BB501
OCR Text	...0.953 0.947 0.942 0.929 0.923 0.912 0.903 0.886 0.879 0.873 0.859 0.846 0.836 0.827 0.815 ANG -2.8 -10.0 -13.6 -16.5 -20.0 -23.7 -26.8 -29.6 -32.8 -35.4 -38.5 -41.2 -44.2 -46.8 -49.2 -52.4 -55.4 -58.0 -60.4 -62.8 S21 MAG 2.40 2.38 2.38 2.37...
Description	Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
File Size	69.37K / 13 Page	View it Online	Download Datasheet

				TT electronics Semelab, Ltd. SEME-LAB[Seme LAB]
Part No.	D1024UK
OCR Text	...0.841 0.861 0.882 0.902 0.923 0.912 0.923 0.923 ang -135 -153 -161 -169 -175 180 174 170 164 161 S21 mag 22.646 10.116 5.623 3.548 2.820 2.093 1.365 1.096 0.902 0.724 ang 88 57 39 25 20 14 9 2 -3 -4 S12 mag 0.0155 0.0099 0.0076 0.0130 0.021...
Description	GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W - 28V - 500MHz PUSHPULL 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W - 28V - 500MHz PUSH-PULL
File Size	68.25K / 4 Page	View it Online	Download Datasheet

				http:// List of Unclassifed Manufacturers ETC[ETC] Eorex Corporation
Part No.	EM42BM3284LBA-8FE EM421M3284LBA-75FE EM421M3284LBA-7FE EM421M3284LBA-8FE EM422M3284LBA-75FE EM422M3284LBA-7FE EM422M3284LBA-8FE EM423M3284LBA-75FE EM423M3284LBA-7FE EM423M3284LBA-8FE EM424M3284LBA-75FE EM424M3284LBA-7FE EM424M3284LBA-8FE EM42AM3284LBA EM42AM3284LBA-75F EM42AM3284LBA-75FE EM42AM3284LBA-7FE EM42AM3284LBA-8FE EM42BM3284LBA-75FE EM42BM3284LBA-7FE EM428M3284LBA-8FE EM428M3284LBA-7FE EM428M3284LBA-75FE
OCR Text	...CMOS process containing 536,870,912 bits which organized as 4Meg words x 4 banks by 32 bits. The 512Mb DDR SDRAM uses a double data rate arc...1MHz, TA=25C) Symbol CCLK CI CO Parameter Clock Capacitance Input Capacitance for CLK, CKE, Address...
Description	512Mb (4M×4Bank×32) Double DATA RATE SDRAM 512Mb (4M?4Bank?32) Double DATA RATE SDRAM 512Mb (4M】4Bank】32) Double DATA RATE SDRAM
File Size	328.97K / 20 Page	View it Online	Download Datasheet

				SANYO[Sanyo Semicon Device]
Part No.	FH201
OCR Text	...0 1400 1600 1800 2000 \| S11 \| 0.912 0.835 0.742 0.649 0.578 0.512 0.445 0.400 0.359 0.319 S11 -17.6 -33.0 -46.9 -58.9 -68.7 -78.1 -86.3 -93...1MHz Cre -- VCB [Tr2] f=1MHz 3 2 Output Capacitance, Cob - pF 2 1.0 7 5 3 2 1.0...
Description	VCO OSC Circuit Applications
File Size	74.16K / 8 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
Part No.	K4M511533E-YPC K4M511533E K4M511533E-C K4M511533E-F1H K4M511533E-F1L K4M511533E-F75 K4M511533E-L K4M511533E-Y K4M511533E-YC K4M511533E-YP K4M511533E-YF1H0 K4M511533E-YC1L0 K4M511533E-YL1L0 K4M511533E-PF750 K4M511533E-YC750
OCR Text	...TION The K4M511533E is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with...1MHz, VREF =0.9V 50 mV) Symbol CCLK CIN CIN CIN CADD COUT Min 3.0 3.0 1.5 3.0 3.0 6.0 Max 12.0 12.0...
Description	Mobile-SDRAM 移动SDRAM 32M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 32M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54
File Size	104.22K / 12 Page	View it Online	Download Datasheet

For 912.1mhz Found Datasheets File :: 149 Search Time::1.25ms
Page :: | 1 | 2 | 3 | 4 | 5 | <6> | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |